Inventor · disambiguated record
Martin Gutsche
Also filed as: GUTSCHE MARTIN · GUTSCHE MARTIN U · GUTSCHE MARTIN ULRICH
51 granted patents·16 pending applications·895 citations·filing 1997–2018
98Inventor score
Top patents by PatentIndex Score
67 records- 0196US6835417B2Method and device for depositing thin layers via ALD/CVD processes in combination with rapid thermal processesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 28, 2004·115 cites·13 claims
- 0295US7420199B2Resistivity changing memory cell having nanowire electrodeINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 2, 2008·40 cites·18 claims
- 0395US7317201B2Method of producing a microelectronic electrode structure, and microelectronic electrode structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 8, 2008·43 cites·10 claims
- 0493US6033977ADual damascene structureSIEMENS AG·Filed 1997·Granted Mar 7, 2000·143 cites·6 claims
- 0589US8084190B2Process for producing sublithographic structuresGUTSCHE MARTIN·Filed 2009·Granted Dec 27, 2011·13 cites·13 claims
- 0688US7605090B2Process for producing sublithographic structuresINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 20, 2009·11 cites·7 claims
- 0787US7303970B2Method of fabricating dielectric mixed layers and capacitive element and use thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 4, 2007·12 cites·2 claims
- 0886US6455369B1Method for fabricating a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 24, 2002·50 cites·15 claims
- 0984US8420526B2Vertical interconnect structure, memory device and associated production methodGUTSCHE MARTIN·Filed 2011·Granted Apr 16, 2013·6 cites·13 claims
- 1084US7119395B2Memory cell with nanocrystals or nanodotsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 10, 2006·34 cites·7 claims
- 1182US7112487B2Method for fabricating a stacked capacitor array having a regular arrangement of a plurality of stacked capacitorsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 26, 2006·10 cites·13 claims
- 1280US6207584B1High dielectric constant material deposition to achieve high capacitanceIBM·Filed 2000·Granted Mar 27, 2001·24 cites·31 claims
- 1378US6693016B2Method of fabricating a trench-structure capacitor deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 17, 2004·21 cites·14 claims
- 1476US6437387B2Memory cell with a stacked capacitorSIEMENS AG·Filed 2001·Granted Aug 20, 2002·18 cites·6 claims
- 1574US5980770ARemoval of post-RIE polymer on Al/Cu metal lineSIEMENS AG·Filed 1998·Granted Nov 9, 1999·45 cites·10 claims
- 1673US6953722B2Method for patterning ceramic layersINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 11, 2005·16 cites·11 claims
- 1773US6177353B1Metallization etching techniques for reducing post-etch corrosion of metal linesINFINEON TECHNOLOGIES CORP·Filed 1998·Granted Jan 23, 2001·52 cites·15 claims
- 1872US7138677B2Capacitor arrangement with capacitors arranged one in the otherINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 21, 2006·17 cites·22 claims
- 1972US6852640B2Method for fabricating a hard maskINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 8, 2005·14 cites·27 claims
- 2069US7361549B2Method for fabricating memory cells for a memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·3 cites·21 claims
- 2169US6207524B1Memory cell with a stacked capacitorSIEMENS AG·Filed 1998·Granted Mar 27, 2001·25 cites·15 claims
- 2267US6949269B2Method for producing vertical patterned layers made of silicon dioxideINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 27, 2005·10 cites·21 claims
- 2365US5854126AMethod for forming metallization in semiconductor devices with a self-planarizing materialSIEMENS AG·Filed 1997·Granted Dec 29, 1998·30 cites·3 claims
- 2464US7157371B2Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 2, 2007·9 cites·15 claims
- 2564US6774005B2Method for fabricating a metal carbide layer and method for fabricating a trench capacitor containing a metal carbideINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 10, 2004·9 cites·12 claims
- 2662US6559005B2Method for fabricating capacitor electrodesINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 6, 2003·10 cites·20 claims
- 2761US7456461B2Stacked capacitor array and fabrication method for a stacked capacitor arrayINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 25, 2008·2 cites·14 claims
- 2861US7087485B2Method of fabricating an oxide collar for a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 8, 2006·7 cites·15 claims
- 2961US7084454B2Nonvolatile integrated semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 1, 2006·9 cites·15 claims
- 3060US7348619B2Ferroelectric memory arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 25, 2008·4 cites·15 claims
- 3160US7186607B2Charge-trapping memory device and method for productionINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 6, 2007·2 cites·16 claims
- 3260US7170125B2Capacitor with electrodes made of ruthenium and method for patterning layers made of ruthenium or rutheniumINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 30, 2007·8 cites·18 claims
- 3360US7081383B2Method for fabricating memory cells and memory cell arrayINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 25, 2006·8 cites·19 claims
- 3459US7998858B2Vertical interconnect structure, memory device and associated production methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 16, 2011·1 cites·7 claims
- 3557US7074689B2Method for fabricating a trench capacitor having an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory cellINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 11, 2006·7 cites·10 claims
- 3657US5935873ADeposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etchingSIEMENS AG·Filed 1997·Granted Aug 10, 1999·21 cites·22 claims
- 3754US6916704B2Multiple deposition of metal layers for the fabrication of an upper capacitor electrode of a trench capacitorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 12, 2005·6 cites·7 claims
- 3852US9177995B2Vertical interconnect structure, memory device and associated production methodGUTSCHE MARTIN·Filed 2012·Granted Nov 3, 2015·0 cites·12 claims
- 3951US6579758B2Method and installation for fabricating one-sided buried strapsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 17, 2003·3 cites·8 claims
- 4051US6420099B1Tungsten hard mask for dry etching aluminum-containing layersINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 16, 2002·16 cites·18 claims
- 4150US2007134871A1Memory chip having a memory cell with low-temperature layers in the memory trench and fabrication methodTEMMLER DIETMAR·Filed 2007·Application pending·0 cites
- 4249US7176514B2Method and configuration for reinforcement of a dielectric layer at defects by self-aligning and self-limiting electrochemical conversion of a substrate materialINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 13, 2007·2 cites·25 claims
- 4347US6653185B2Method of providing trench walls by using two-step etching processesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 25, 2003·1 cites·11 claims
- 4445US2004216670A1Process for the ALD coating of substrates and apparatus suitable for carrying out the processINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 4544US8049264B2Method for producing a dielectric material on a semiconductor device and semiconductor deviceQIMONDA AG·Filed 2005·Granted Nov 1, 2011·0 cites·12 claims
- 4643US6977405B2Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Dec 20, 2005·2 cites·10 claims
- 4743US6136660AStacked capacitator memory cell and method of fabricationSIEMENS AG·Filed 1998·Granted Oct 24, 2000·8 cites·7 claims
- 4842US7312115B2Fabrication method for a semiconductor structure having integrated capacitorsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 25, 2007·0 cites·10 claims
- 4942US2007221613A1Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structureGUTSCHE MARTIN U·Filed 2006·Application pending·0 cites
- 5041US7316951B2Fabrication method for a trench capacitor having an insulation collarINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 8, 2008·0 cites·8 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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