Inventor · disambiguated record
Atsushi Yagishita
Also filed as: YAGISHITA ATSUSHI
52 granted patents·20 pending applications·1,523 citations·filing 1991–2022
99Inventor score
Top patents by PatentIndex Score
72 records- 0199US6054355AMethod of manufacturing a semiconductor device which includes forming a dummy gateTOSHIBA KK·Filed 1998·Granted Apr 25, 2000·338 cites·23 claims
- 0298US6310367B1MOS transistor having a tensile-strained SI layer and a compressive-strained SI-GE layerTOSHIBA KK·Filed 2000·Granted Oct 30, 2001·213 cites·18 claims
- 0395US7314787B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jan 1, 2008·35 cites·14 claims
- 0495US6515338B1Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2000·Granted Feb 4, 2003·82 cites·17 claims
- 0593US7214576B1Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2005·Granted May 8, 2007·30 cites·16 claims
- 0693US6664592B2Semiconductor device with groove type channel structureTOSHIBA KK·Filed 2002·Granted Dec 16, 2003·60 cites·2 claims
- 0793US6346438B1Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1998·Granted Feb 12, 2002·91 cites·32 claims
- 0892US8134209B2Semiconductor device and method for manufacturing the sameYAGISHITA ATSUSHI·Filed 2009·Granted Mar 13, 2012·26 cites·20 claims
- 0992US8124465B2Method for manufacturing a semiconductor device having a source extension region and a drain extension regionYAGISHITA ATSUSHI·Filed 2010·Granted Feb 28, 2012·15 cites·12 claims
- 1092US7820551B2Semiconductor device having fins FET and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Oct 26, 2010·20 cites·11 claims
- 1192US7723171B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2008·Granted May 25, 2010·20 cites·9 claims
- 1291US7608890B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Oct 27, 2009·17 cites·10 claims
- 1389US7755104B2FinFET pMOS double gate semiconductor device with uniaxial tensile strain applied to channel by shrinkable gate electrode material, current flow in <110> crystal orientation, and source and drain Schottky contacts with channel and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted Jul 13, 2010·17 cites·12 claims
- 1488US6887747B2Method of forming a MISFET having a schottky junctioned silicideTOSHIBA KK·Filed 2002·Granted May 3, 2005·39 cites·7 claims
- 1587US8338889B2Semiconductor device and method of manufacturing semiconductor deviceKANEKO AKIO·Filed 2011·Granted Dec 25, 2012·8 cites·9 claims
- 1687US7405449B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jul 29, 2008·14 cites·20 claims
- 1787US6979846B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Dec 27, 2005·31 cites·13 claims
- 1886US7247913B2Semiconductor device having a Schottky source/drain transistorTOSHIBA KK·Filed 2005·Granted Jul 24, 2007·11 cites·11 claims
- 1986US6815279B2Manufacturing method of CMOS devicesTOKYO SHIBAURA ELECTRIC CO·Filed 2001·Granted Nov 9, 2004·31 cites·5 claims
- 2084US12382843B2Device and method for fabricating highly integrated and miniaturized silicon quantum bit device including at least a tunnel field effect transistor with reduced leakage current, inter-quantum bit coupler, and quantum gate operating mechanism that are formed by self-alignmentAIST·Filed 2021·Granted Aug 5, 2025·1 cites·9 claims
- 2184US7537978B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted May 26, 2009·8 cites·15 claims
- 2284US7371644B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2006·Granted May 13, 2008·10 cites·5 claims
- 2384US5650339AMethod of manufacturing thin film transistorTOSHIBA KK·Filed 1995·Granted Jul 22, 1997·53 cites·3 claims
- 2482US6465823B1Dynamic threshold voltage metal insulator semiconductor effect transistorTOSHIBA KK·Filed 2000·Granted Oct 15, 2002·26 cites·5 claims
- 2581US7465624B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Dec 16, 2008·9 cites·14 claims
- 2678US6607952B1Semiconductor device with a disposable gate and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Aug 19, 2003·23 cites·3 claims
- 2778US5675176ASemiconductor device and a method for manufacturing the sameTOSHIBA KK·Filed 1995·Granted Oct 7, 1997·43 cites·21 claims
- 2877US7795682B2Semiconductor device and method manufacturing semiconductor deviceTOSHIBA KK·Filed 2007·Granted Sep 14, 2010·5 cites·12 claims
- 2976US8138031B2Semiconductor device and method of manufacturing semiconductor deviceYAGISHITA ATSUSHI·Filed 2009·Granted Mar 20, 2012·5 cites·7 claims
- 3076US7915130B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2009·Granted Mar 29, 2011·5 cites·10 claims
- 3176US7208353B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2005·Granted Apr 24, 2007·5 cites·4 claims
- 3275US5994756ASubstrate having shallow trench isolationTOSHIBA KK·Filed 1996·Granted Nov 30, 1999·56 cites·16 claims
- 3374US7479423B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jan 20, 2009·4 cites·2 claims
- 3473US6879001B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2003·Granted Apr 12, 2005·14 cites·6 claims
- 3569US7488631B2Semiconductor device having a schottky source/drain transistorTOSHIBA KK·Filed 2007·Granted Feb 10, 2009·3 cites·6 claims
- 3669US6087698ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1997·Granted Jul 11, 2000·25 cites·7 claims
- 3769US5350708AMethod of making dynamic random access semiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Sep 27, 1994·23 cites·3 claims
- 3868US7064024B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2005·Granted Jun 20, 2006·3 cites·12 claims
- 3965US6794720B2Dynamic threshold voltage metal insulator field effect transistorTOSHIBA KK·Filed 2002·Granted Sep 21, 2004·10 cites·4 claims
- 4065US5250830ADynamic type semiconductor memory device and its manufacturing methodTOSHIBA KK·Filed 1991·Granted Oct 5, 1993·20 cites·10 claims
- 4164US7208797B2Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 24, 2007·8 cites·9 claims
- 4264US6812535B2Semiconductor device with a disposable gate and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Nov 2, 2004·9 cites·2 claims
- 4363US8053292B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2010·Granted Nov 8, 2011·1 cites·3 claims
- 4462US5872383ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1997·Granted Feb 16, 1999·20 cites·18 claims
- 4556US12402366B2Spin qubit-type semiconductor device and integrated circuit thereofAIST·Filed 2022·Granted Aug 26, 2025·0 cites·8 claims
- 4651US7772076B2Method of manufacturing semiconductor device using dummy gate wiring layerTOSHIBA KK·Filed 2007·Granted Aug 10, 2010·0 cites·6 claims
- 4750US7242064B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jul 10, 2007·4 cites·7 claims
- 4850US5739575ADielectrically isolated substrate and method for manufacturing the sameTOSHIBA KK·Filed 1996·Granted Apr 14, 1998·16 cites·13 claims
- 4947US7462917B2Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2006·Granted Dec 9, 2008·0 cites·3 claims
- 5047US6919260B1Method of manufacturing a substrate having shallow trench isolationTOSHIBA KK·Filed 1999·Granted Jul 19, 2005·16 cites·34 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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