Inventor · disambiguated record
Yoshiaki Matsushita
Also filed as: MATSUSHITA YOSHIAKI
36 granted patents·1 pending application·2,132 citations·filing 1978–2006
98Inventor score
Files withTOSHIBA KK24VLSI TECHNOLOGY RES ASS4HITACHI SHIPBUILDING ENG CO3HITACHI LTD2NGK INSULATORS LTD2
Top patents by PatentIndex Score
37 records- 0198US5698869AInsulated-gate transistor having narrow-bandgap-sourceTOSHIBA KK·Filed 1995·Granted Dec 16, 1997·415 cites·31 claims
- 0298US5246500AVapor phase epitaxial growth apparatusTOSHIBA KK·Filed 1992·Granted Sep 21, 1993·604 cites·5 claims
- 0394US4314595AMethod of forming nondefective zone in silicon single crystal wafer by two stage-heat treatmentVLSI TECHNOLOGY RES ASS·Filed 1980·Granted Feb 9, 1982·179 cites·13 claims
- 0491US4376657AMethod of making fault-free surface zone in semiconductor devices by step-wise heat treatingVLSI TECHNOLOGY RES ASS·Filed 1980·Granted Mar 15, 1983·107 cites·9 claims
- 0584US6521293B1Method for producing a ceramic-coated blade of gas turbineHITACHI LTD·Filed 2000·Granted Feb 18, 2003·27 cites·3 claims
- 0684US4894206ACrystal pulling apparatusTOSHIBA KK·Filed 1987·Granted Jan 16, 1990·33 cites·22 claims
- 0784US4645546ASemiconductor substrateTOSHIBA KK·Filed 1985·Granted Feb 24, 1987·63 cites·9 claims
- 0883US5514904ASemiconductor device with monocrystalline gate insulating filmTOSHIBA KK·Filed 1994·Granted May 7, 1996·57 cites·32 claims
- 0983US5071776AWafer processsing method for manufacturing wafers having contaminant-gettering damage on one surfaceTOSHIBA KK·Filed 1988·Granted Dec 10, 1991·74 cites·14 claims
- 1078US5675176ASemiconductor device and a method for manufacturing the sameTOSHIBA KK·Filed 1995·Granted Oct 7, 1997·43 cites·21 claims
- 1177US4787997AEtching solution for evaluating crystal faultsTOSHIBA KK·Filed 1988·Granted Nov 29, 1988·26 cites·2 claims
- 1277US4500388AMethod for forming monocrystalline semiconductor film on insulating filmTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 19, 1985·47 cites·12 claims
- 1375US5994756ASubstrate having shallow trench isolationTOSHIBA KK·Filed 1996·Granted Nov 30, 1999·56 cites·16 claims
- 1475US5124276AFilling contact hole with selectively deposited EPI and poly siliconTOSHIBA KK·Filed 1991·Granted Jun 23, 1992·44 cites·9 claims
- 1574US4378269AMethod of manufacturing a single crystal silicon rodVLSI TECHNOLOGY RES ASS·Filed 1981·Granted Mar 29, 1983·18 cites·2 claims
- 1673US4885257AGettering process with multi-step annealing and inert ion implantationTOSHIBA KK·Filed 1987·Granted Dec 5, 1989·40 cites·3 claims
- 1770US4193783AMethod of treating a silicon single crystal ingotVLSI TECHNOLOGY RES ASS·Filed 1978·Granted Mar 18, 1980·21 cites·35 claims
- 1869US6042951ACeramic-coated blade of gas turbine and method of producing sameHITACHI LTD·Filed 1998·Granted Mar 28, 2000·30 cites·3 claims
- 1962US4672821AAbsorption-type heat pumpHITACHI SHIPBUILDING ENG CO·Filed 1985·Granted Jun 16, 1987·21 cites·11 claims
- 2061US6008110ASemiconductor substrate and method of manufacturing sameTOSHIBA KK·Filed 1997·Granted Dec 28, 1999·27 cites·17 claims
- 2157US5220191ASemiconductor device having a well electrically insulated from the substrateTOSHIBA KK·Filed 1991·Granted Jun 15, 1993·17 cites·6 claims
- 2257US5057899ASemiconductor device with improved wiring contact portionTOSHIBA KK·Filed 1990·Granted Oct 15, 1991·21 cites·6 claims
- 2355US5683824ACoated ceramic member and process for production thereofNGK INSULATORS LTD·Filed 1995·Granted Nov 4, 1997·11 cites·2 claims
- 2452US5004702APreparation method of selective growth silicon layer doped with impuritiesTOSHIBA KK·Filed 1989·Granted Apr 2, 1991·19 cites·7 claims
- 2552US4894349ATwo step vapor-phase epitaxial growth process for control of autodopingTOSHIBA KK·Filed 1988·Granted Jan 16, 1990·18 cites·10 claims
- 2652US4862000AMethod for predicting density of micro crystal defects in semiconductor element from silicon wafer used in the manufacture of the element, and infrared absorption measurement apparatus for this methodTOSHIBA KK·Filed 1987·Granted Aug 29, 1989·17 cites·5 claims
- 2750US5739575ADielectrically isolated substrate and method for manufacturing the sameTOSHIBA KK·Filed 1996·Granted Apr 14, 1998·16 cites·13 claims
- 2849US5116780AMethod of manufacturing a semiconductor device having improved contact resistance characteristicsTOSHIBA KK·Filed 1990·Granted May 26, 1992·13 cites·8 claims
- 2947US6919260B1Method of manufacturing a substrate having shallow trench isolationTOSHIBA KK·Filed 1999·Granted Jul 19, 2005·16 cites·34 claims
- 3047US5148457ASystem for analyzing metal impurity on the surface of a single crystal semiconductor by using total reflection of x-rays fluorescenceTOSHIBA KK·Filed 1991·Granted Sep 15, 1992·14 cites·6 claims
- 3145US4579601AMethod of growing a resistive epitaxial layer on a short lifetime epi-layerTOSHIBA KK·Filed 1984·Granted Apr 1, 1986·12 cites·11 claims
- 3243US5897916AProcess for production of coated ceramic memberNGK INSULATORS LTD·Filed 1997·Granted Apr 27, 1999·6 cites·4 claims
- 3341US2008192345A1Iodine Polarizing Film, a Method for Producing the Same, and a Polarizing Plate Using the SameMOCHIZUKI NORIAKI·Filed 2006·Application pending·0 cites
- 3438US5574307ASemiconductor device and method of producing the sameTOSHIBA KK·Filed 1994·Granted Nov 12, 1996·9 cites·16 claims
- 3530US4662191AAbsorption - type refrigeration systemHITACHI SHIPBUILDING ENG CO·Filed 1985·Granted May 5, 1987·4 cites·7 claims
- 3627US4837610AInsulation film for a semiconductor deviceTOSHIBA KK·Filed 1988·Granted Jun 6, 1989·2 cites·2 claims
- 3723US4805419AAbsorption type heat exchanging apparatusHITACHI SHIPBUILDING ENG CO·Filed 1988·Granted Feb 21, 1989·5 cites·4 claims
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