Inventor · disambiguated record
Mikito Sakakibara
Also filed as: SAKAKIBARA MIKITO
27 granted patents·7 pending applications·179 citations·filing 2001–2023
96Inventor score
Top patents by PatentIndex Score
34 records- 0181US6580107B2Compound semiconductor device with depletion layer stop regionSANYO ELECTRIC CO·Filed 2001·Granted Jun 17, 2003·28 cites·30 claims
- 0277US6946891B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2004·Granted Sep 20, 2005·25 cites·12 claims
- 0375US7339210B2Compound semiconductor switching circuit deviceSANYO ELECTRIC CO·Filed 2005·Granted Mar 4, 2008·6 cites·13 claims
- 0475US6627967B2Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Granted Sep 30, 2003·21 cites·17 claims
- 0574US7358788B2Compound semiconductor switching circuit deviceSANYO ELECTRIC CO·Filed 2006·Granted Apr 15, 2008·5 cites·6 claims
- 0670US6914280B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2003·Granted Jul 5, 2005·17 cites·35 claims
- 0769US6573529B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 3, 2003·15 cites·12 claims
- 0865US6777277B2Manufacturing method of Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Granted Aug 17, 2004·11 cites·18 claims
- 0964US7498616B2Compound semiconductor switch circuit deviceSANYO ELECTRIC CO·Filed 2006·Granted Mar 3, 2009·2 cites·14 claims
- 1060US2024348046A1Distributed electrostatic discharge protection for semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 1159US7701032B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Apr 20, 2010·2 cites·18 claims
- 1259US6853072B2Semiconductor switching circuit device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2003·Granted Feb 8, 2005·8 cites·17 claims
- 1357US6891267B2Semiconductor switching circuit deviceSANYO ELECTRIC CO·Filed 2003·Granted May 10, 2005·7 cites·12 claims
- 1456US6627956B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Sep 30, 2003·7 cites·12 claims
- 1555US9735142B2Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrateSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Aug 15, 2017·0 cites·8 claims
- 1652US8450805B2Compound semiconductor switch circuit deviceASANO TETSURO·Filed 2005·Granted May 28, 2013·1 cites·12 claims
- 1751US6833616B2Multilayer wiring board with mounting padSANYO ELECTRIC CO·Filed 2002·Granted Dec 21, 2004·5 cites·17 claims
- 1851US6682968B2Manufacturing method of Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Granted Jan 27, 2004·5 cites·23 claims
- 1950US6787871B2Integrated schottky barrier diode and manufacturing method thereofSANYO ELECTRIC CO·Filed 2002·Granted Sep 7, 2004·5 cites·7 claims
- 2047US8742506B2Protecting element having first and second high concentration impurity regions separated by insulating regionASANO TETSURO·Filed 2012·Granted Jun 3, 2014·0 cites·15 claims
- 2146US6867115B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Mar 15, 2005·2 cites·9 claims
- 2246US6833608B2Semiconductor device and packaging system thereforeSANYO ELECTRIC CO·Filed 2002·Granted Dec 21, 2004·3 cites·19 claims
- 2345US6818969B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Nov 16, 2004·2 cites·16 claims
- 2444US7262470B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted Aug 28, 2007·1 cites·8 claims
- 2542US6903426B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 7, 2005·1 cites·12 claims
- 2641US2003129788A1Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Application pending·0 cites
- 2738US7732868B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 8, 2010·0 cites·16 claims
- 2838US2005121730A1Protective deviceFiled 2003·Application pending·0 cites
- 2937US7005688B2Semiconductor device with impurity layer to prevent depletion layer expansionSANYO ELECTRIC CO·Filed 2003·Granted Feb 28, 2006·0 cites·20 claims
- 3037US2003013240A1Manufacturing method of compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Application pending·0 cites
- 3136US6727559B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Apr 27, 2004·0 cites·7 claims
- 3236US2005179106A1Schottky barrier diodeSANYO ELECTRIC CO·Filed 2005·Application pending·0 cites
- 3335US2006177077A1High frequency mixer circuitSANYO ELECTRIC CO·Filed 2006·Application pending·0 cites
- 3433US2003025175A1Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Application pending·0 cites
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