Inventor · disambiguated record
Jack A. Mandelman
Also filed as: MANDELMAN JACK A · MANDELMAN JACK ALLAN · MANDELMAN JACK ALLEN
41 granted patents·1 pending application·2,167 citations·filing 1994–2007
99Inventor score
Top patents by PatentIndex Score
42 records- 0198US6825529B2Stress inducing spacersIBM·Filed 2002·Granted Nov 30, 2004·234 cites·1 claims
- 0298US6717216B1SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the deviceIBM·Filed 2002·Granted Apr 6, 2004·282 cites·15 claims
- 0397US6974981B2Isolation structures for imposing stress patternsIBM·Filed 2002·Granted Dec 13, 2005·137 cites·2 claims
- 0497US6555891B1SOI hybrid structure with selective epitaxial growth of siliconIBM·Filed 2000·Granted Apr 29, 2003·129 cites·13 claims
- 0596US7485520B2Method of manufacturing a body-contacted finfetIBM·Filed 2007·Granted Feb 3, 2009·55 cites·1 claims
- 0696US7173310B2Lateral lubistor structure and methodIBM·Filed 2005·Granted Feb 6, 2007·49 cites·14 claims
- 0795US6720630B2Structure and method for MOSFET with metallic gate electrodeIBM·Filed 2001·Granted Apr 13, 2004·122 cites·21 claims
- 0895US6635543B2SOI hybrid structure with selective epitaxial growth of siliconIBM·Filed 2002·Granted Oct 21, 2003·79 cites·27 claims
- 0994US6534807B2Local interconnect junction on insulator (JOI) structureIBM·Filed 2001·Granted Mar 18, 2003·115 cites·22 claims
- 1093US6780694B2MOS transistorIBM·Filed 2003·Granted Aug 24, 2004·67 cites·20 claims
- 1191US7388259B2Strained finFET CMOS device structuresIBM·Filed 2002·Granted Jun 17, 2008·61 cites·8 claims
- 1289US5521422ACorner protected shallow trench isolation deviceIBM·Filed 1994·Granted May 28, 1996·89 cites·10 claims
- 1387US6884667B1Field effect transistor with stressed channel and method for making sameIBM·Filed 2003·Granted Apr 26, 2005·36 cites·4 claims
- 1487US6562666B1Integrated circuits with reduced substrate capacitanceIBM·Filed 2000·Granted May 13, 2003·41 cites·15 claims
- 1587US6544874B2Method for forming junction on insulator (JOI) structureIBM·Filed 2001·Granted Apr 8, 2003·48 cites·36 claims
- 1687US5773362AMethod of manufacturing an integrated ULSI heatsinkIBM·Filed 1997·Granted Jun 30, 1998·74 cites·18 claims
- 1786US6806534B2Damascene method for improved MOS transistorIBM·Filed 2003·Granted Oct 19, 2004·35 cites·18 claims
- 1886US6686637B1Gate structure with independently tailored vertical doping profileIBM·Filed 2002·Granted Feb 3, 2004·29 cites·14 claims
- 1985US7374987B2Stress inducing spacersIBM·Filed 2004·Granted May 20, 2008·32 cites·7 claims
- 2085US7271049B2Method of forming self-aligned low-k gate capIBM·Filed 2006·Granted Sep 18, 2007·10 cites·9 claims
- 2184US6335248B1Dual workfunction MOSFETs with borderless diffusion contacts for high-performance embedded DRAM technologyIBM·Filed 2001·Granted Jan 1, 2002·37 cites·22 claims
- 2284US6320225B1SOI CMOS body contact through gate, self-aligned to source- drain diffusionsIBM·Filed 1999·Granted Nov 20, 2001·74 cites·9 claims
- 2384US5643822AMethod for forming trench-isolated FET devicesIBM·Filed 1995·Granted Jul 1, 1997·66 cites·17 claims
- 2482US6911384B2Gate structure with independently tailored vertical doping profileIBM·Filed 2003·Granted Jun 28, 2005·22 cites·14 claims
- 2577US6873010B2High performance logic and high density embedded dram with borderless contact and antispacerIBM·Filed 2003·Granted Mar 29, 2005·14 cites·3 claims
- 2677US6509611B1Method for wrapped-gate MOSFETIBM·Filed 2001·Granted Jan 21, 2003·20 cites·20 claims
- 2777US5729052AIntegrated ULSI heatsinkIBM·Filed 1996·Granted Mar 17, 1998·43 cites·6 claims
- 2876US7550330B2Deep junction SOI MOSFET with enhanced edge body contactsIBM·Filed 2006·Granted Jun 23, 2009·6 cites·10 claims
- 2976US5614433AMethod of fabricating low leakage SOI integrated circuitsIBM·Filed 1995·Granted Mar 25, 1997·39 cites·5 claims
- 3073US5741738AMethod of making corner protected shallow trench field effect transistorIBM·Filed 1996·Granted Apr 21, 1998·41 cites·14 claims
- 3170US7230296B2Self-aligned low-k gate capIBM·Filed 2004·Granted Jun 12, 2007·12 cites·16 claims
- 3270US7009258B2Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous siliconIBM·Filed 2004·Granted Mar 7, 2006·11 cites·3 claims
- 3366US7605077B2Dual metal integration scheme based on full silicidation of the gate electrodeIBM·Filed 2006·Granted Oct 20, 2009·3 cites·12 claims
- 3464US7081387B2Damascene gate multi-mesa MOSFETIBM·Filed 2004·Granted Jul 25, 2006·9 cites·13 claims
- 3564US6344671B1Pair of FETs including a shared SOI body contact and the method of forming the FETsIBM·Filed 1999·Granted Feb 5, 2002·19 cites·19 claims
- 3659US6841826B2Low-GIDL MOSFET structure and method for fabricationIBM·Filed 2003·Granted Jan 11, 2005·5 cites·12 claims
- 3759US6734109B2Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous siliconIBM·Filed 2001·Granted May 11, 2004·5 cites·4 claims
- 3859US6613615B2Pair of FETs including a shared SOI body contact and the method of forming the FETsIBM·Filed 2001·Granted Sep 2, 2003·7 cites·9 claims
- 3953US6878582B2Low-GIDL MOSFET structure and method for fabricationIBM·Filed 2004·Granted Apr 12, 2005·3 cites·5 claims
- 4053US2008001247A1Mesa Optical Sensors and Methods of Manufacturing the SameABADEER WAGDI W·Filed 2006·Application pending·0 cites
- 4152US6818952B2Damascene gate multi-mesa MOSFETIBM·Filed 2002·Granted Nov 16, 2004·4 cites·6 claims
- 4235US6069022AOptical FETIBM·Filed 1998·Granted May 30, 2000·3 cites·18 claims
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