Inventor · disambiguated record
Friedhelm Bauer
Also filed as: BAUER FRIEDHELM
24 granted patents·1 pending application·361 citations·filing 1989–2019
96Inventor score
Files withASEA BROWN BOVERI15ABB SCHWEIZ AG4ABB MANAGEMENT AG2ABB TECHNOLOGY AG2ABB POWER GRIDS SWITZERLAND AG1
Top patents by PatentIndex Score
25 records- 0183US8304814B2Power semiconductor deviceBAUER FRIEDHELM·Filed 2011·Granted Nov 6, 2012·10 cites·25 claims
- 0279US5105244AGate turn-off power semiconductor componentASEA BROWN BOVERI·Filed 1991·Granted Apr 14, 1992·47 cites·6 claims
- 0379US5040042ABidirectional semiconductor component that can be turned offASEA BROWN BOVERI·Filed 1990·Granted Aug 13, 1991·49 cites·6 claims
- 0477US4985741AMOS-controlled bipolar power semiconductor componentASEA BROWN BOVERI·Filed 1990·Granted Jan 15, 1991·43 cites·9 claims
- 0575US5668385APower semiconductor component with transparent emitter and stop layerASEA BROWN BOVERI·Filed 1995·Granted Sep 16, 1997·40 cites·23 claims
- 0673US4975782AField effect controlled, bipolar power semiconductor component with silicide layerASEA BROWN BOVERI·Filed 1989·Granted Dec 4, 1990·30 cites·5 claims
- 0770US11031473B2Silicon carbide superjunction power semiconductor device and method for manufacturing the sameABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 0868US8829563B2Power semiconductor device and method for manufacturing such a power semiconductor deviceABB TECHNOLOGY AG·Filed 2013·Granted Sep 9, 2014·2 cites·20 claims
- 0957US5698867ATurn-off, MOS-controlled, power semiconductor componentASEA BROWN BOVERI·Filed 1995·Granted Dec 16, 1997·19 cites·8 claims
- 1055US4954869AMOS-controlled thyristor (MCT)ASEA BROWN BOVERI·Filed 1989·Granted Sep 4, 1990·15 cites·4 claims
- 1153US5619047ASemiconductor diode in which electrons are injected into a reverse currentASEA BROWN BOVERI·Filed 1995·Granted Apr 8, 1997·14 cites·9 claims
- 1252US5144400APower semiconductor device with switch-off facilityASEA BROWN BOVERI·Filed 1991·Granted Sep 1, 1992·15 cites·7 claims
- 1350US5414290AIGBT with self-aligning cathode pattern and method for producing itABB MANAGEMENT AG·Filed 1994·Granted May 9, 1995·13 cites·15 claims
- 1448US4967255AControllable power semiconductor componentASEA BROWN BOVERI·Filed 1989·Granted Oct 30, 1990·11 cites·5 claims
- 1547US5491351AGate turn-off thyristorABB MANAGEMENT AG·Filed 1994·Granted Feb 13, 1996·12 cites·20 claims
- 1646US10566463B2Power semiconductor device with floating field ring terminationABB SCHWEIZ AG·Filed 2019·Granted Feb 18, 2020·0 cites·20 claims
- 1743US5661315AControllable power semiconductor componentASEA BROWN BOVERI·Filed 1995·Granted Aug 26, 1997·8 cites·5 claims
- 1842US10629677B2Area efficient floating field ring terminationABB SCHWEIZ AG·Filed 2018·Granted Apr 21, 2020·0 cites·19 claims
- 1940US5710445AGate turn-off thyristor for high blocking voltage and small component thicknessASEA BROWN BOVERI·Filed 1995·Granted Jan 20, 1998·9 cites·13 claims
- 2040US5616938AMOS-controlled power semiconductor component for high voltagesASEA BROWN BOVERI·Filed 1995·Granted Apr 1, 1997·6 cites·5 claims
- 2137US5349213ATurn-off power semiconductor deviceASEA BROWN BOVERI·Filed 1992·Granted Sep 20, 1994·6 cites·11 claims
- 2236US9659927B2Junction barrier Schottky rectifierABB SCHWEIZ AG·Filed 2015·Granted May 23, 2017·0 cites·18 claims
- 2336US6576936B1Bipolar transistor with an insulated gate electrodeABB SCHWEIZ AG·Filed 1999·Granted Jun 10, 2003·6 cites·10 claims
- 2436US5243201AMos-controlled thyristor mctASEA BROWN BOVERI·Filed 1992·Granted Sep 7, 1993·5 cites·14 claims
- 2535US2016204240A1Power semiconductor deviceABB TECHNOLOGY AG·Filed 2016·Application pending·0 cites
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