Inventor · disambiguated record
Kai Esmark
Also filed as: ESMARK KAI
30 granted patents·4 pending applications·293 citations·filing 2002–2022
96Inventor score
Top patents by PatentIndex Score
34 records- 0197US9812438B2Avalanche diode having an enhanced defect concentration level and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2015·Granted Nov 7, 2017·39 cites·21 claims
- 0297US9257523B2Avalanche diode having an enhanced defect concentration level and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 9, 2016·41 cites·18 claims
- 0394US12244137B2ESD protection for multi-die integrated circuits (ICs) including integrated passive devicesINFINEON TECHNOLOGIES AG·Filed 2022·Granted Mar 4, 2025·2 cites·20 claims
- 0494US6905892B2Operating method for a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 14, 2005·102 cites·11 claims
- 0593US7800128B2Semiconductor ESD device and method of making sameINFINEON TECHNOLOGIES AG·Filed 2008·Granted Sep 21, 2010·19 cites·34 claims
- 0692US8350355B2Electrostatic discharge devicesINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jan 8, 2013·13 cites·33 claims
- 0786US8956924B2Method of forming a semiconductor device including a silicon controlled rectifierINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 17, 2015·5 cites·15 claims
- 0882US7087938B2ESD protective circuit with collector-current-controlled triggering for a monolithically integrated circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 8, 2006·10 cites·17 claims
- 0981US8178897B2Semiconductor ESD device and method of making sameDOMANSKI KRZYSZTOF·Filed 2010·Granted May 15, 2012·4 cites·10 claims
- 1079US7732834B2Semiconductor ESD device and method of making sameINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jun 8, 2010·7 cites·32 claims
- 1177US7985983B2Semiconductor ESD device and method of making sameINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jul 26, 2011·4 cites·20 claims
- 1270US6930501B2Method for determining an ESD/latch-up strength of an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 16, 2005·18 cites·13 claims
- 1369US9263430B2Semiconductor ESD device and method of making sameINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 16, 2016·1 cites·11 claims
- 1469US7694247B2Identification of ESD and latch-up weak points in an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 6, 2010·6 cites·20 claims
- 1569US7279726B2ESD protection deviceINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 9, 2007·4 cites·20 claims
- 1666US8791547B2Avalanche diode having an enhanced defect concentration level and method of making the sameSCHNEIDER JENS·Filed 2008·Granted Jul 29, 2014·1 cites·25 claims
- 1765US8471292B2Semiconductor ESD device and method of making sameDOMANSKI KRZYSZTOF·Filed 2012·Granted Jun 25, 2013·1 cites·7 claims
- 1861US10756081B2Avalanche diode having an enhanced defect concentration level and method of making the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 25, 2020·0 cites·14 claims
- 1960US8623731B2Methods of forming electrostatic discharge devicesESMARK KAI·Filed 2012·Granted Jan 7, 2014·1 cites·34 claims
- 2053US7009404B2Method and device for testing the ESD resistance of a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 7, 2006·6 cites·6 claims
- 2150US7679103B2Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 16, 2010·0 cites·14 claims
- 2250US7359169B2Circuit for protecting integrated circuits against electrostatic dischargesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 15, 2008·4 cites·29 claims
- 2348US7888701B2Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristorINFINEON TECHNOLOGIES AG·Filed 2010·Granted Feb 15, 2011·0 cites·14 claims
- 2447US8076728B2Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of productionESMARK KAI·Filed 2009·Granted Dec 13, 2011·0 cites·9 claims
- 2546US6884688B2Method for producing a MOS transistor and MOS transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 26, 2005·3 cites·8 claims
- 2645US11121126B2Silicon controlled rectifier and manufacturing method thereforINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 14, 2021·0 cites·19 claims
- 2745US2016172849A1Esd/eos detectionINFINEON TECHNOLOGIES AG·Filed 2014·Application pending·0 cites
- 2844US9899367B2Integrated circuit including lateral insulated gate field effect transistorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 20, 2018·0 cites·27 claims
- 2943US7202527B2MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltageINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 10, 2007·2 cites·10 claims
- 3042US8304806B2ESD and EMC optimized HV-MOS transistorMUELLER KARL-HEINZ·Filed 2010·Granted Nov 6, 2012·0 cites·20 claims
- 3142US8129292B2Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristorGLASER ULRICH·Filed 2010·Granted Mar 6, 2012·0 cites·6 claims
- 3242US2007034959A1Integrated circuit arrangements with ESD-resistant capacitor and corresponding method of productionESMARK KAI·Filed 2006·Application pending·0 cites
- 3337US2005263817A1Transistor comprising fill areas in the source drain and/or drain regionWENDEL MARTIN·Filed 2005·Application pending·0 cites
- 3435US2006261412A1Process and electrostatic discharge protection device for the protection of a semiconductor circuitESMARK KAI·Filed 2006·Application pending·0 cites
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