Inventor · disambiguated record
Dean W. Freeman
Also filed as: FREEMAN DEAN W
13 granted patents·1,293 citations·filing 1986–1989
95Inventor score
Files withTEXAS INSTRUMENTS INC13
Top patents by PatentIndex Score
13 records- 0198US4916091APlasma and plasma UV deposition of SiO2TEXAS INSTRUMENTS INC·Filed 1988·Granted Apr 10, 1990·494 cites·8 claims
- 0296US4988533AMethod for deposition of silicon oxide on a waferTEXAS INSTRUMENTS INC·Filed 1988·Granted Jan 29, 1991·116 cites·10 claims
- 0395US4911103AProcessing apparatus and methodTEXAS INSTRUMENTS INC·Filed 1988·Granted Mar 27, 1990·167 cites·12 claims
- 0494US4810673AOxide deposition methodTEXAS INSTRUMENTS INC·Filed 1986·Granted Mar 7, 1989·156 cites·22 claims
- 0591US4863561AMethod and apparatus for cleaning integrated circuit wafersTEXAS INSTRUMENTS INC·Filed 1988·Granted Sep 5, 1989·98 cites·14 claims
- 0688US4906328AMethod for wafer treatingTEXAS INSTRUMENTS INC·Filed 1988·Granted Mar 6, 1990·42 cites·24 claims
- 0787US4822450AProcessing apparatus and methodTEXAS INSTRUMENTS INC·Filed 1988·Granted Apr 18, 1989·56 cites·30 claims
- 0880US4910043AProcessing apparatus and methodTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 20, 1990·66 cites·14 claims
- 0972US4832778AProcessing apparatus for wafersTEXAS INSTRUMENTS INC·Filed 1988·Granted May 23, 1989·39 cites·14 claims
- 1054US4877753AIn situ doped polysilicon using tertiary butyl phosphineTEXAS INSTRUMENTS INC·Filed 1988·Granted Oct 31, 1989·20 cites·16 claims
- 1152US5023206ASemiconductor device with adjacent non-oxide layers and the fabrication thereofTEXAS INSTRUMENTS INC·Filed 1987·Granted Jun 11, 1991·13 cites·12 claims
- 1250US4882299ADeposition of polysilicon using a remote plasma and in situ generation of UV light.TEXAS INSTRUMENTS INC·Filed 1987·Granted Nov 21, 1989·18 cites·14 claims
- 1338US5096856AIn-situ doped silicon using tertiary butyl phosphineTEXAS INSTRUMENTS INC·Filed 1989·Granted Mar 17, 1992·8 cites·16 claims
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