Inventor · disambiguated record
Nien-Chung Li
Also filed as: HUANG CHIEN-CHIEH · LI NIEN-CHUNG
31 granted patents·5 pending applications·102 citations·filing 2004–2023
96Inventor score
Top patents by PatentIndex Score
36 records- 0194US9741850B1Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 22, 2017·12 cites·25 claims
- 0292US11682726B2High voltage semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 20, 2023·2 cites·10 claims
- 0392US9761657B2Metal-oxide-semiconductor transistor and method of forming gate layoutUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 12, 2017·8 cites·7 claims
- 0492US9653460B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·8 cites·10 claims
- 0591US9985129B2High-voltage metal-oxide-semiconductor transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 29, 2018·6 cites·7 claims
- 0691US9716139B2Method for forming high voltage transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 25, 2017·8 cites·18 claims
- 0790US11495681B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Nov 8, 2022·2 cites·16 claims
- 0887US9859417B2High-voltage metal-oxide-semiconductor transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·4 cites·14 claims
- 0986US9577069B1Method of fabricating semiconductor MOS deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 21, 2017·5 cites·12 claims
- 1086US9431239B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 30, 2016·6 cites·18 claims
- 1185US7618856B2Method for fabricating strained-silicon CMOS transistorsUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 17, 2009·13 cites·21 claims
- 1284US10204996B2Metal-oxide-semiconductor transistor and method of forming gate layoutUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 12, 2019·3 cites·5 claims
- 1384US7592262B2Method for manufacturing MOS transistors utilizing a hybrid hard maskUNITED MICROELECTRONICS CORP·Filed 2007·Granted Sep 22, 2009·10 cites·29 claims
- 1483US9972678B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 15, 2018·3 cites·17 claims
- 1583US9224859B1High voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 29, 2015·4 cites·11 claims
- 1680US10411088B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 10, 2019·2 cites·19 claims
- 1779US9391197B1Semiconductor device and operating method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 12, 2016·3 cites·22 claims
- 1878US12206020B2High voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 21, 2025·0 cites·9 claims
- 1977US12080794B2Manufacturing method of high voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 3, 2024·0 cites·9 claims
- 2071US9972539B2Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 15, 2018·1 cites·10 claims
- 2157US12464762B2EDMOS and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Nov 4, 2025·0 cites·16 claims
- 2257US10497805B2Semiconductor structure and manufacturing method of the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 3, 2019·0 cites·10 claims
- 2356US10475903B2Method of forming transistor with dual spacerUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 12, 2019·0 cites·10 claims
- 2456US10290718B2Metal-oxide-semiconductor transistor and method of forming gate layoutUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 14, 2019·0 cites·6 claims
- 2556US10084083B1Semiconductor structure and manufacturing method of the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 25, 2018·0 cites·10 claims
- 2655US10535734B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 14, 2020·0 cites·9 claims
- 2753US10453938B2Transistor with dual spacer and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 22, 2019·0 cites·7 claims
- 2853US10396157B1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 27, 2019·0 cites·11 claims
- 2946US8742498B2High voltage semiconductor device and fabricating method thereofCHIEN FU-CHUN·Filed 2011·Granted Jun 3, 2014·1 cites·10 claims
- 3043US6955929B2Method of measuring a gate channel length of a metal-oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted Oct 18, 2005·1 cites·19 claims
- 3143US2007087542A1Method of forming a silicideHUANG JEN-HONG·Filed 2006·Application pending·0 cites
- 3241US2007042584A1Method of forming a silicideHUANG JEN-HONG·Filed 2005·Application pending·0 cites
- 3340US9852952B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 26, 2017·0 cites·6 claims
- 3435US2019103460A1Semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 3535US2006091459A1Semiconductor device having metal silicide and method of making the sameLI NIEN-CHUNG·Filed 2004·Application pending·0 cites
- 3634US2016336417A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
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