Inventor · disambiguated record
Koichi Naniwae
Also filed as: NANIWAE KOICHI
14 granted patents·10 pending applications·45 citations·filing 1997–2024
88Inventor score
Top patents by PatentIndex Score
24 records- 0174US6681064B2Multi-wavelength semiconductor light source and process for producing the sameNEC CORP·Filed 2002·Granted Jan 20, 2004·17 cites·15 claims
- 0272US9793434B2LED element and method of manufacturing the sameEL-SEED CORP·Filed 2014·Granted Oct 17, 2017·2 cites·16 claims
- 0367US2024243553A1Nitride semiconductor laser elementUSHIO ELECTRIC INC·Filed 2024·Application pending·0 cites
- 0466US9117967B2Method of manufacturing glass substrate with concave-convex film using dry etching, glass substrate with concave-convex film, solar cell, and method of manufacturing solar cellTERAMAE FUMIHARU·Filed 2012·Granted Aug 25, 2015·1 cites·13 claims
- 0549US9634188B2LED elementEL-SEED CORP·Filed 2014·Granted Apr 25, 2017·0 cites·13 claims
- 0649US2018026154A1Led element and method for producing sameEL-SEED CORP·Filed 2017·Application pending·0 cites
- 0748US7454111B2Optical device of waveguide type and its production methodNEC CORP·Filed 2004·Granted Nov 18, 2008·2 cites·11 claims
- 0847US2018097144A1Method for manufacturing light emitting element and light emitting elementEL SEED CORP·Filed 2017·Application pending·0 cites
- 0947US2015152326A1SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENTEL SEED CORP·Filed 2013·Application pending·0 cites
- 1046US10923882B2Nitride semiconductor light-emitting deviceUSHIO ELECTRIC INC·Filed 2019·Granted Feb 16, 2021·0 cites·10 claims
- 1146US9590150B2Light-emitting deviceEL-SEED CORP·Filed 2014·Granted Mar 7, 2017·0 cites·2 claims
- 1245US9853183B2Method for manufacturing light emitting element and light emitting elementEL-SEED CORP·Filed 2015·Granted Dec 26, 2017·0 cites·6 claims
- 1345US6178190B1II-VI compound semiconductor light emitting deviceNEC CORP·Filed 1998·Granted Jan 23, 2001·12 cites·16 claims
- 1444US2010252914A1Optical semiconductor device with a concentration of residual siliconNEC CORP·Filed 2010·Application pending·0 cites
- 1543US2016005923A1Led element and manufacturing method for sameEL SEED CORP·Filed 2014·Application pending·0 cites
- 1642US2016060514A1SiC FLUORESCENT MATERIAL AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING ELEMENTEL SEED CORP·Filed 2015·Application pending·0 cites
- 1740US2009257467A1Group III Nitride Semiconductor Device and Method for Manufacturing Group III Nitride Semiconductor DeviceNEC CORP·Filed 2006·Application pending·0 cites
- 1840US2017355041A1METHOD FOR PROCESSING SiC MATERIALEL-SEED CORP·Filed 2015·Application pending·0 cites
- 1939US9472736B2Etching methodEL-SEED CORP·Filed 2012·Granted Oct 18, 2016·0 cites·10 claims
- 2039US2007020933A1Method of cleaning treatment and method for manufacturing semiconductor deviceNANIWAE KOICHI·Filed 2003·Application pending·0 cites
- 2136US9142619B2Group III nitride semiconductor device and method for manufacturing the sameKITANO TSUKASA·Filed 2011·Granted Sep 22, 2015·0 cites·20 claims
- 2235US6072202AII-VI compound semiconductor device with III-V buffer layerNEC CORP·Filed 1997·Granted Jun 6, 2000·5 cites·18 claims
- 2334US5773850ASemiconductor device having a ZnCdSe buffer layer with a II-VI compound semiconductor layer containing Te grown thereonNEC CORP·Filed 1997·Granted Jun 30, 1998·5 cites·3 claims
- 2429US6320208B1II-VI compound semiconductor deviceNEC CORP·Filed 1999·Granted Nov 20, 2001·1 cites·14 claims
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