Inventor · disambiguated record
Robert Dawson
Also filed as: DAWSON ROBERT · DAWSON ROBERT J
135 granted patents·2 pending applications·5,052 citations·filing 1982–2013
99Inventor score
Files withADVANCED MICRO DEVICES INC130ADVANCED MICRO DEVCIES INC1DAWSON ELECTRICS1FALCONBRIDGE LTD1HONEYWELL INT INC1
Top patents by PatentIndex Score
137 records- 0199US6111260AMethod and apparatus for in situ anneal during ion implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 29, 2000·305 cites·19 claims
- 0298US5850105ASubstantially planar semiconductor topography using dielectrics and chemical mechanical polishADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 15, 1998·278 cites·10 claims
- 0394US5953626ADissolvable dielectric methodADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 14, 1999·160 cites·12 claims
- 0493US6060345AMethod of making NMOS and PMOS devices with reduced masking stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·114 cites·22 claims
- 0593US5759913AMethod of formation of an air gap within a semiconductor dielectric by solvent desorptionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·148 cites·17 claims
- 0693USD304424STamper proof container closureDAWSON ELECTRICS·Filed 1986·Granted Nov 7, 1989·48 cites·1 claims
- 0792US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 0892US5827776AMethod of making an integrated circuit which uses an etch stop for producing staggered interconnect linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 27, 1998·139 cites·14 claims
- 0991US5963803AMethod of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widthsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·90 cites·33 claims
- 1090US5918129AMethod of channel doping using diffusion from implanted polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·18 claims
- 1189US5930642ATransistor with buried insulative layer beneath the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·104 cites·20 claims
- 1289US5888675AReticle that compensates for radiation-induced lens error in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·68 cites·26 claims
- 1388US5792706AInterlevel dielectric with air gaps to reduce permitivityADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 11, 1998·96 cites·20 claims
- 1488US5710054AMethod of forming a shallow junction by diffusion from a silicon-based spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 20, 1998·92 cites·57 claims
- 1587US6259142B1Multiple split gate semiconductor device and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·9 claims
- 1687US5840451AIndividually controllable radiation sources for providing an image pattern in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 24, 1998·61 cites·48 claims
- 1787US5783864AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 21, 1998·78 cites·5 claims
- 1886US5899732AMethod of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·83 cites·8 claims
- 1986US5516729AMethod for planarizing a semiconductor topography using a spin-on glass material with a variable chemical-mechanical polish rateADVANCED MICRO DEVICES INC·Filed 1994·Granted May 14, 1996·140 cites·16 claims
- 2085US9447484B2Methods for forming oxide dispersion-strengthened alloysHONEYWELL INT INC·Filed 2013·Granted Sep 20, 2016·5 cites·18 claims
- 2185US6137182AMethod of reducing via and contact dimensions beyond photolithography equipment limitsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 24, 2000·67 cites·11 claims
- 2285US5930634AMethod of making an IGFET with a multilevel gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·63 cites·48 claims
- 2384US6225151B1Nitrogen liner beneath transistor source/drain regions to retard dopant diffusionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 1, 2001·68 cites·37 claims
- 2484US6201278B1Trench transistor with insulative spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·48 cites·40 claims
- 2584US5814555AInterlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 29, 1998·63 cites·11 claims
- 2683US6080629AIon implantation into a gate electrode layer using an implant profile displacement layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 27, 2000·51 cites·38 claims
- 2783US5926713AMethod for achieving global planarization by forming minimum mesas in large field areasADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 20, 1999·69 cites·26 claims
- 2881US6208015B1Interlevel dielectric with air gaps to lessen capacitive couplingADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 27, 2001·51 cites·21 claims
- 2981US5899727AMethod of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarizationADVANCED MICRO DEVICES INC·Filed 1996·Granted May 4, 1999·56 cites·18 claims
- 3081US5851891AIGFET method of forming with silicide contact on ultra-thin gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·42 cites·40 claims
- 3181US5503882AMethod for planarizing an integrated circuit topographyADVANCED MICRO DEVICES INC·Filed 1994·Granted Apr 2, 1996·77 cites·8 claims
- 3280US6166354ASystem and apparatus for in situ monitoring and control of annealing in semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 26, 2000·37 cites·22 claims
- 3380US5963783AIn-line detection and assessment of net charge in PECVD silicon dioxide (oxide) layersADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·52 cites·11 claims
- 3479US6197645B1Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 6, 2001·44 cites·18 claims
- 3579US6078080AAsymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 20, 2000·37 cites·18 claims
- 3679US5937299AMethod for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·44 cites·20 claims
- 3778US5998293AMultilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnectADVANCED MICRO DEVCIES INC·Filed 1998·Granted Dec 7, 1999·54 cites·11 claims
- 3877US5874346ASubtrench conductor formation with large tilt angle implantADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 23, 1999·44 cites·11 claims
- 3977US5759897AMethod of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source regionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·35 cites·18 claims
- 4077US5442175AGas evolution component analysisADVANCED MICRO DEVICES INC·Filed 1994·Granted Aug 15, 1995·29 cites·16 claims
- 4176US6376330B1Dielectric having an air gap formed between closely spaced interconnect linesADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 23, 2002·48 cites·13 claims
- 4276US6087706ACompact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench wallsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·51 cites·18 claims
- 4376US5801075AMethod of forming trench transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 1, 1998·33 cites·50 claims
- 4473US6091149ADissolvable dielectric method and structureADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 18, 2000·37 cites·6 claims
- 4572US6522013B1Punch-through via with conformal barrier linerADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 18, 2003·44 cites·10 claims
- 4672US5976948AProcess for forming an isolation region with trench capADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 2, 1999·40 cites·20 claims
- 4772US5976956AMethod of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·40 cites·33 claims
- 4872US5926717AMethod of making an integrated circuit with oxidizable trench linerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 20, 1999·41 cites·25 claims
- 4972US5923982AMethod of making asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region using two source/drain implant stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 13, 1999·32 cites·36 claims
- 5072US5885887AMethod of making an igfet with selectively doped multilevel polysilicon gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·32 cites·35 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →