Inventor · disambiguated record
Benoît Amstatt
Also filed as: AMSTATT BENOIT · AMSTATT BENOÎT
18 granted patents·3 pending applications·33 citations·filing 2013–2022
91Inventor score
Top patents by PatentIndex Score
21 records- 0187US10424692B2Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengthsAledia·Filed 2016·Granted Sep 24, 2019·5 cites·7 claims
- 0284US10651341B2Optoelectronic device and method for manufacturing sameAledia·Filed 2019·Granted May 12, 2020·3 cites·11 claims
- 0381US10886427B2Optoelectronic device comprising three-dimensional diodesAledia·Filed 2017·Granted Jan 5, 2021·2 cites·15 claims
- 0479US9559256B2Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jan 31, 2017·4 cites·12 claims
- 0577US9698011B2Process for growing at least one nanowire using a transition metal nitride layer obtained in two stepsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jul 4, 2017·3 cites·20 claims
- 0677US9679966B2Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jun 13, 2017·3 cites·25 claims
- 0776US10636653B2Process for growing at least one nanowire using a transition metal nitride layer obtained in two stepsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Apr 28, 2020·3 cites·20 claims
- 0876US9899566B2Optoelectronic device comprising microwires or nanowiresAledia·Filed 2013·Granted Feb 20, 2018·2 cites·22 claims
- 0975US9991342B2Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jun 5, 2018·3 cites·27 claims
- 1070US9331242B2Optoelectronic device and method for manufacturing sameAledia·Filed 2013·Granted May 3, 2016·2 cites·3 claims
- 1167US11563147B2Optoelectronic device comprising three-dimensional light-emitting diodesAledia·Filed 2018·Granted Jan 24, 2023·1 cites·14 claims
- 1267US9728679B2Optoelectronic device and method for manufacturing sameAledia·Filed 2015·Granted Aug 8, 2017·1 cites·15 claims
- 1365US10153399B2Optoelectronic device comprising semiconductor elements and its fabrication processAledia·Filed 2014·Granted Dec 11, 2018·1 cites·22 claims
- 1454US2024250206A1Optoelectronic device and method for manufacturing sameAledia·Filed 2022·Application pending·0 cites
- 1553US11894413B2Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensionsAledia·Filed 2019·Granted Feb 6, 2024·0 cites·22 claims
- 1650US2024274747A1Method for manufacturing an optoelectronic deviceAledia·Filed 2022·Application pending·0 cites
- 1750US2023268460A1Optoelectronic device and manufacturing methodAledia·Filed 2021·Application pending·0 cites
- 1849US12074191B2Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitrideAledia·Filed 2020·Granted Aug 27, 2024·0 cites·15 claims
- 1943US10340138B2Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbideCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jul 2, 2019·0 cites·19 claims
- 2037US10801129B2Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elementsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Oct 13, 2020·0 cites·17 claims
- 2135US10026870B2Optoelectronic device having semiconductor elementsAledia·Filed 2015·Granted Jul 17, 2018·0 cites·7 claims
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