Inventor · disambiguated record
Chang-Ki Hong
Also filed as: HONG CHANG-KI
95 granted patents·41 pending applications·938 citations·filing 1995–2021
99Inventor score
Top patents by PatentIndex Score
136 records- 0195US6383882B1Method for fabricating MOS transistor using selective silicide processSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 7, 2002·113 cites·15 claims
- 0294US7531456B2Method of forming self-aligned double patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 12, 2009·29 cites·23 claims
- 0392US7384825B2Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contactSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·21 cites·19 claims
- 0492US6626968B2Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 30, 2003·53 cites·27 claims
- 0592US6248667B1Chemical mechanical polishing method using double polishing stop layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 19, 2001·62 cites·20 claims
- 0691US8043970B2Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 25, 2011·15 cites·9 claims
- 0791US8034705B2Method of forming a seam-free tungsten plugSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·22 cites·6 claims
- 0891US7709277B2PAA-based etchant, methods of using same, and resultant structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 4, 2010·22 cites·26 claims
- 0990US7223693B2Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·21 cites·43 claims
- 1090US6642105B2Semiconductor device having multi-gate insulating layers and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 4, 2003·63 cites·6 claims
- 1188US7803657B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·13 cites·16 claims
- 1288US7666789B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·14 cites·20 claims
- 1387US8790470B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2011·Granted Jul 29, 2014·8 cites·35 claims
- 1487US7176041B2PAA-based etchant, methods of using same, and resultant structuresSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·32 cites·17 claims
- 1585US7216653B2Cleaning solution and cleaning method of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 15, 2007·7 cites·12 claims
- 1684US8084367B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2007·Granted Dec 27, 2011·9 cites·31 claims
- 1782US8585917B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2011·Granted Nov 19, 2013·5 cites·36 claims
- 1882US8053845B2Semiconductor device including dummy gate part and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 8, 2011·7 cites·9 claims
- 1982US7338352B2Slurry delivery system, chemical mechanical polishing apparatus and method for using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·9 cites·6 claims
- 2082US6863592B2Chemical/mechanical polishing slurry and chemical mechanical polishing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 8, 2005·26 cites·39 claims
- 2182US5604156AWire forming method for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Feb 18, 1997·85 cites·22 claims
- 2281US8038508B2Apparatus for polishing a wafer and method for detecting a polishing end point by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 18, 2011·7 cites·17 claims
- 2381US7678625B2Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·8 cites·19 claims
- 2481US7562662B2Cleaning solution and cleaning method of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 21, 2009·5 cites·7 claims
- 2581US7442646B2Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurrySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 28, 2008·6 cites·19 claims
- 2680US7560386B2Method of manufacturing nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·12 cites·24 claims
- 2780US7344999B2Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 18, 2008·7 cites·26 claims
- 2879US7498217B2Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·26 claims
- 2979US7435644B2Method of manufacturing capacitor of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·3 cites·20 claims
- 3078US8338300B2Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the sameLEE JONG-WON·Filed 2008·Granted Dec 25, 2012·6 cites·7 claims
- 3178US7745338B2Method of forming fine pitch hardmask patterns and method of forming fine patterns of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·7 cites·34 claims
- 3278US7435301B2Cleaning solution of silicon germanium layer and cleaning method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 14, 2008·6 cites·6 claims
- 3378US7196010B2Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 27, 2007·16 cites·34 claims
- 3477US7857939B2Apparatus for treating wafers using supercritical fluidSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 28, 2010·4 cites·11 claims
- 3576US8148710B2Phase-change memory device using a variable resistance structureCHOI SUK-HUN·Filed 2010·Granted Apr 3, 2012·3 cites·11 claims
- 3676US7670942B2Method of fabricating self-aligned contact pad using chemical mechanical polishing processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 2, 2010·6 cites·20 claims
- 3775US7535052B2Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·4 cites·10 claims
- 3875US7449417B2Cleaning solution for silicon surface and methods of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·4 cites·18 claims
- 3974US9035396B2Semiconductor device including dummy gate part and method of fabricating the sameKWON BYOUNG-HO·Filed 2011·Granted May 19, 2015·3 cites·32 claims
- 4073US8951383B2Apparatus for treating wafers using supercritical fluidLEE HYO-SAN·Filed 2010·Granted Feb 10, 2015·2 cites·13 claims
- 4173US7309683B2Cleaning composition and method of cleaning a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 18, 2007·4 cites·12 claims
- 4272US7820508B2Semiconductor device having capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 26, 2010·3 cites·17 claims
- 4372US7804084B2Phase change memory elements having a confined portion of phase change material on a recessed contactSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 28, 2010·4 cites·8 claims
- 4471US8685272B2Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor deviceKIM GO-UN·Filed 2009·Granted Apr 1, 2014·5 cites·15 claims
- 4571US8110499B2Method of forming a contact structureKANG DAE-HYUK·Filed 2009·Granted Feb 7, 2012·5 cites·15 claims
- 4671US7985999B2Semiconductor device having capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 26, 2011·2 cites·8 claims
- 4770US7105475B2Cleaning solution and cleaning method of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 12, 2006·9 cites·12 claims
- 4870US6930054B2Slurry composition for use in chemical mechanical polishing of metal wiringSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 16, 2005·13 cites·18 claims
- 4969US8357613B2Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealingSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·6 cites·13 claims
- 5069US8008172B2Methods of forming semiconductor devices including multistage planarization and crystalization of a semiconductor layerSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·3 cites·14 claims
Showing the top 50 of 136 patent records by PatentIndex Score.
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