Inventor · disambiguated record
Cay-Uwe Pinnow
Also filed as: PINNOW CAY-UWE
20 granted patents·14 pending applications·322 citations·filing 2004–2010
95Inventor score
Top patents by PatentIndex Score
34 records- 0197US7749805B2Method for manufacturing an integrated circuit including an electrolyte material layerQIMONDA AG·Filed 2005·Granted Jul 6, 2010·71 cites·26 claims
- 0297US7405418B2Memory device electrode with a surface structureINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 29, 2008·81 cites·18 claims
- 0395US7658773B2Method for fabricating a solid electrolyte memory device and solid electrolyte memory deviceQIMONDA AG·Filed 2006·Granted Feb 9, 2010·46 cites·26 claims
- 0485US7692175B2Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layersQIMONDA AG·Filed 2005·Granted Apr 6, 2010·6 cites·4 claims
- 0585US7483293B2Method for improving the thermal characteristics of semiconductor memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jan 27, 2009·17 cites·19 claims
- 0684US7214587B2Method for fabricating a semiconductor memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 8, 2007·14 cites·12 claims
- 0784US7119395B2Memory cell with nanocrystals or nanodotsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 10, 2006·34 cites·7 claims
- 0880US7514362B2Integrated circuit including sub-lithographic structuresINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 7, 2009·7 cites·11 claims
- 0974US7787279B2Integrated circuit having a resistive memoryQIMONDA AG·Filed 2006·Granted Aug 31, 2010·6 cites·13 claims
- 1073US7358520B2Semiconductor memory cell, method for fabricating it and semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 15, 2008·6 cites·15 claims
- 1170US7700398B2Method for fabricating an integrated device comprising a structure with a solid electrolyteINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 20, 2010·3 cites·28 claims
- 1266US7329561B2Fabricating memory components (PCRAMS) including memory cells based on a layer that changes phase stateINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 12, 2008·3 cites·31 claims
- 1365US7829134B2Method for producing memory having a solid electrolyte material regionADESTO TECHNOLOGY CORP·Filed 2005·Granted Nov 9, 2010·5 cites·19 claims
- 1464US8062694B2Method for producing memory having a solid electrolyte material regionPINNOW CAY-UWE·Filed 2010·Granted Nov 22, 2011·3 cites·20 claims
- 1561US7084454B2Nonvolatile integrated semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 1, 2006·9 cites·15 claims
- 1660US7772614B2Solid electrolyte memory element and method for fabricating such a memory elementQIMONDA AG·Filed 2006·Granted Aug 10, 2010·4 cites·16 claims
- 1760US7348619B2Ferroelectric memory arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 25, 2008·4 cites·15 claims
- 1853US2009087965A1Structure and method for manufacturing phase change memoriesQIMONDA AG·Filed 2008·Application pending·0 cites
- 1950US7442605B2Resistively switching memoryINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 28, 2008·2 cites·22 claims
- 2046US7732888B2Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and deviceQIMONDA AG·Filed 2007·Granted Jun 8, 2010·1 cites·28 claims
- 2145US2012006398A1Protective back contact layer for solar cellsNGUYEN NGUYET·Filed 2010·Application pending·0 cites
- 2242US2007010082A1Structure and method for manufacturing phase change memories with particular switching characteristicsPINNOW CAY-UWE·Filed 2005·Application pending·0 cites
- 2339US2007194301A1Semiconductor arrangement with non-volatile memoriesSEZI RECAI·Filed 2004·Application pending·0 cites
- 2438US2006071244A1Switching or amplifier device, in particular transistorINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 2537US7613028B2Solid electrolyte switching elementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 3, 2009·0 cites·28 claims
- 2637US2009103351A1Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory ModulePINNOW CAY-UWE·Filed 2007·Application pending·0 cites
- 2736US2007166924A1Memory cell and method for fabricating a memory deviceINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 2834US2006049390A1Resistively switching nonvolatile memory cell based on alkali metal ion driftUFERT KLAUS·Filed 2005·Application pending·0 cites
- 2934US2006203430A1Method and device for driving solid electrolyte cellsINFINEON TECHNOLOGIES AG·Filed 2006·Application pending·0 cites
- 3034US2007274120A1CBRAM cell with a reversible conductive bridging mechanismINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 3133US2006139989A1Integration of 1T1R CBRAM memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Application pending·0 cites
- 3232US2006175640A1Semiconductor memory device, memory cell array, and method for fabricating the sameHAPP THOMAS·Filed 2006·Application pending·0 cites
- 3332US2007195611A1Programmable structure, a memory, a display and a method for reading data from a memory cellSYMANCZYK RALF·Filed 2006·Application pending·0 cites
- 3430US2008112207A1Solid electrolyte memory devicePINNOW CAY-UWE·Filed 2006·Application pending·0 cites
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