Inventor · disambiguated record
Hirohito Watanabe
Also filed as: WATANABE HIROHITO
45 granted patents·9 pending applications·1,291 citations·filing 1991–2021
98Inventor score
Top patents by PatentIndex Score
54 records- 0196US5366917AMethod for fabricating polycrystalline silicon having micro roughness on the surfaceNEC CORP·Filed 1991·Granted Nov 22, 1994·128 cites·8 claims
- 0295US6225133B1Method of manufacturing thin film capacitorNEC CORP·Filed 1994·Granted May 1, 2001·138 cites·8 claims
- 0392US5372962AMethod of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrodeNEC CORP·Filed 1993·Granted Dec 13, 1994·106 cites·20 claims
- 0490US5959326ACapacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentrationNEC CORP·Filed 1997·Granted Sep 28, 1999·88 cites·9 claims
- 0590US5366920AMethod for fabricating a thin film capacitorNEC CORP·Filed 1994·Granted Nov 22, 1994·94 cites·11 claims
- 0688US5658417AHF vapor selective etching method and apparatusNEC CORP·Filed 1995·Granted Aug 19, 1997·94 cites·2 claims
- 0787US5623243ASemiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grainNEC CORP·Filed 1995·Granted Apr 22, 1997·85 cites·15 claims
- 0881US9795027B2Printed wiring boardFUJIKURA LTD·Filed 2015·Granted Oct 17, 2017·4 cites·6 claims
- 0981US9549460B2Printed wiring boardFUJIKURA LTD·Filed 2015·Granted Jan 17, 2017·4 cites·4 claims
- 1079US8809687B2Flexible printed board and method of manufacturing sameWATANABE HIROHITO·Filed 2011·Granted Aug 19, 2014·4 cites·7 claims
- 1179US5989969AMethod of producing silicon layer having surface controlled to be unevenNEC CORP·Filed 1997·Granted Nov 23, 1999·37 cites·11 claims
- 1278US5397748AMethod of producing semiconductor device with insulating film having at least silicon nitride filmNEC CORP·Filed 1992·Granted Mar 14, 1995·66 cites·1 claims
- 1375US6236790B1Optical-fiber cable and method of manufacturing the sameFUJIKURA LTD·Filed 1999·Granted May 22, 2001·41 cites·10 claims
- 1475US6024888AVapor selective etching method and apparatusNEC CORP·Filed 1996·Granted Feb 15, 2000·41 cites·17 claims
- 1573US9247651B2Flexible printed circuit and method of manufacturing sameWATANABE HIROHITO·Filed 2010·Granted Jan 26, 2016·3 cites·2 claims
- 1673US8177561B2Socket contact terminal and semiconductor deviceOUCHI YASUHIRO·Filed 2007·Granted May 15, 2012·9 cites·51 claims
- 1773US5910019AMethod of producing silicon layer having surface controlled to be uneven or evenNEC CORP·Filed 1997·Granted Jun 8, 1999·29 cites·2 claims
- 1873US5835337AStacked capacitor having a corrugated electrodeNEC CORP·Filed 1996·Granted Nov 10, 1998·27 cites·18 claims
- 1973US5753949ASemiconductor device wherein one of capacitor electrodes comprises a conductor pole and conductor layerNEC CORP·Filed 1996·Granted May 19, 1998·28 cites·7 claims
- 2072US7238996B2Semiconductor deviceNEC CORP·Filed 2005·Granted Jul 3, 2007·4 cites·10 claims
- 2172US5973355ANonvolatile semiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1997·Granted Oct 26, 1999·29 cites·4 claims
- 2270US7880215B2Nonvolatile semiconductor storage unit and production method thereforNEC CORP·Filed 2005·Granted Feb 1, 2011·6 cites·24 claims
- 2370US5863602AMethod for capturing gaseous impurities and semiconductor device manufacturing apparatusNEC CORP·Filed 1997·Granted Jan 26, 1999·37 cites·7 claims
- 2470US5661052AMethod of fabricating semiconductor device having low-resistance gate electrode and diffusion layersNEC CORP·Filed 1996·Granted Aug 26, 1997·32 cites·18 claims
- 2568US7759744B2Semiconductor device having high dielectric constant layers of different thicknessesNEC ELECTRONICS CORP·Filed 2005·Granted Jul 20, 2010·4 cites·1 claims
- 2668US7072554B2Optical fiber and optical fiber cable using the sameFUJIKURA LTD·Filed 2003·Granted Jul 4, 2006·12 cites·6 claims
- 2767US7838945B2Semiconductor device and manufacturing method thereofNEC CORP·Filed 2006·Granted Nov 23, 2010·4 cites·17 claims
- 2867US6804442B1Optical fiber and optical fiber cable having a first jacket layer and a second jacket layer and a coefficient of thermal expansion selecting methodFUJIKURA LTD·Filed 2003·Granted Oct 12, 2004·10 cites·18 claims
- 2966US9055676B2Differential signal transmission circuit and method for manufacturing sameFUJIKURA LTD·Filed 2013·Granted Jun 9, 2015·1 cites·6 claims
- 3066US8841976B2Printed wiring board including first and second insulating layers having dielectric loss tangents that are different by a predetermined relationshipOGAWA TAIJI·Filed 2012·Granted Sep 23, 2014·4 cites·8 claims
- 3164US6022772AStacked capacitor having a corrugated electrodeNEC CORP·Filed 1997·Granted Feb 8, 2000·18 cites·19 claims
- 3263US8546696B2Printed circuit board and method for manufacturing the sameWATANABE HIROHITO·Filed 2010·Granted Oct 1, 2013·1 cites·15 claims
- 3363US5723379AMethod for fabricating polycrystalline silicon having micro roughness on the surfaceNEC CORP·Filed 1994·Granted Mar 3, 1998·19 cites·22 claims
- 3460US9006579B2Method of manufacturing printed circuit board and printed circuit boardINABA MASATOSHI·Filed 2012·Granted Apr 14, 2015·1 cites·3 claims
- 3558US5837594AMethod of manufacturing a semiconductor device wherein one of capacitor electrodes comprises a conductor pole and a tray-shaped conductor layerNEC CORP·Filed 1997·Granted Nov 17, 1998·15 cites·5 claims
- 3656US6853782B2Optical fiber drop cableFUJIKURA LTD·Filed 2002·Granted Feb 8, 2005·5 cites·11 claims
- 3756US2023107088A1Method and system for determining event class by aiUNIV HIROSHIMA·Filed 2021·Application pending·0 cites
- 3854US6033978AProcess of selectively producing refractory metal silicide uniform in thickness regardless of conductivity type of silicon thereunderNEC CORP·Filed 1996·Granted Mar 7, 2000·15 cites·21 claims
- 3949US7679148B2Semiconductor device, production method and production device thereofNEC CORP·Filed 2003·Granted Mar 16, 2010·4 cites·1 claims
- 4049US6146966AProcess for forming a capacitor incorporated in a semiconductor deviceNEC CORP·Filed 1997·Granted Nov 14, 2000·12 cites·6 claims
- 4149US2008203500A1Semiconductor device and production method thereforNEC CORP·Filed 2008·Application pending·0 cites
- 4248US2013133930A1Printed wiring boardFUJIKURA LTD·Filed 2012·Application pending·0 cites
- 4347US5691249AMethod for fabricating polycrystalline silicon having micro roughness on the surfaceNEC CORP·Filed 1995·Granted Nov 25, 1997·11 cites·20 claims
- 4446US5972750ANonvolatile semiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1998·Granted Oct 26, 1999·9 cites·3 claims
- 4545US2013093532A1Flexible printed circuit boardFUJIKURA LTD·Filed 2012·Application pending·0 cites
- 4645US2012292085A1Flexible printed circuit and method of manufacturing the sameWATANABE HIROHITO·Filed 2012·Application pending·0 cites
- 4744US6054360AMethod of manufacturing a semiconductor memory device with a stacked capacitor wherein an electrode of the capacitor is shaped using a high melting point metal filmNEC CORP·Filed 1997·Granted Apr 25, 2000·8 cites·31 claims
- 4842US2013133931A1Printed wiring boardFUJIKURA LTD·Filed 2012·Application pending·0 cites
- 4941US2018306184A1Vane pumpKYB CORP·Filed 2016·Application pending·0 cites
- 5038US2006131670A1Semiconductor device and production method thereforOGURA TAKASHI·Filed 2004·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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