Inventor · disambiguated record
Deep M. Jariwala
Also filed as: JARIWALA DEEP · JARIWALA DEEP M
7 granted patents·3 pending applications·7 citations·filing 2014–2025
75Inventor score
Top patents by PatentIndex Score
10 records- 0180US9472686B2Gate-tunable P-N heterojunction diode, and fabrication method and application of sameUNIV NORTHWESTERN·Filed 2014·Granted Oct 18, 2016·4 cites·33 claims
- 0278US9515257B2Gate-tunable atomically-thin memristors and methods for preparing same and applications of sameUNIV NORTHWESTERN·Filed 2016·Granted Dec 6, 2016·3 cites·42 claims
- 0370US12442103B2Nano and quantum sized particles from atomically thin transition metal dichalcogenides and related methodsUNIV PENNSYLVANIA·Filed 2022·Granted Oct 14, 2025·0 cites·11 claims
- 0463US10784848B2System and method for anti-ambipolar heterojunctions from solution-processed semiconductorsUNIV NORTHWESTERN·Filed 2019·Granted Sep 22, 2020·0 cites·2 claims
- 0554US10491206B2System and method for anti-ambipolar heterojunctions from solution-processed semiconductorsUNIV NORTHWESTERN·Filed 2018·Granted Nov 26, 2019·0 cites·20 claims
- 0654US2025389052A1Novel synthesis of two-dimensional indium selenideUNIV PENNSYLVANIA·Filed 2025·Application pending·0 cites
- 0750US9929725B2System and method for anti-ambipolar heterojunctions from solution-processed semiconductorsUNIV NORTHWESTERN·Filed 2015·Granted Mar 27, 2018·0 cites·19 claims
- 0848US9972799B2Gate-tunable p-n heterojunction diode, and fabrication method and application of sameUNIV NORTHWESTERN·Filed 2016·Granted May 15, 2018·0 cites·4 claims
- 0948US2024047592A1Scalable Van Der Waals Superlattices For Absorbers And EmittersUNIV PENNSYLVANIA·Filed 2023·Application pending·0 cites
- 1041US2021399138A1Post CMOS Compatible Ferroelectric Field Effect Transistor With AIScN Dielectric And 2D Material ChannelUNIV PENNSYLVANIA·Filed 2021·Application pending·0 cites
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