Inventor · disambiguated record
Jin Yong Oh
Also filed as: OH JIN YONG
21 granted patents·1 pending application·113 citations·filing 2009–2023
92Inventor score
Top patents by PatentIndex Score
22 records- 0197US8013389B2Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·73 cites·20 claims
- 0294US11088166B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 10, 2021·7 cites·16 claims
- 0391US8426301B2Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devicesOH JIN-YONG·Filed 2011·Granted Apr 23, 2013·19 cites·24 claims
- 0486US10490244B2Nonvolatile memory device performing program operation and operation method thereofSK HYNIX INC·Filed 2018·Granted Nov 26, 2019·6 cites·16 claims
- 0584US11282849B2Non-volatile memory device utilizing dummy memory block as pool capacitorYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Mar 22, 2022·1 cites·21 claims
- 0681US10482976B2Memory device performing UV-assisted erase operationSK HYNIX INC·Filed 2018·Granted Nov 19, 2019·2 cites·14 claims
- 0780US11594284B2Read time of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
- 0878US2023200074A1Novel 3d nand memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 0977US11849576B2Non-volatile memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 19, 2023·0 cites·20 claims
- 1076US10984866B2Non-volatile memory device utilizing dummy memory block as pool capacitorYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Apr 20, 2021·3 cites·10 claims
- 1175US12183403B2Three-dimensional memory device and improved methods of reading the same by shortening read timesYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·17 claims
- 1275US11616077B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Mar 28, 2023·0 cites·16 claims
- 1374US11563029B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 24, 2023·0 cites·17 claims
- 1472US11063056B2Non-volatile memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·15 claims
- 1570US11849585B2Three-dimensional memory devices having backside insulating structures and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 1670US11581323B2Non-volatile memory device and manufacturing method thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Feb 14, 2023·0 cites·15 claims
- 1769US11737264B2Non-volatile memory device utilizing dummy memory block as pool capacitorYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1862US11302711B2Three-dimensional memory devices having a backside trench isolation and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
- 1951US10878868B2Nonvolatile memory device performing program operation and operation method thereofSK HYNIX INC·Filed 2019·Granted Dec 29, 2020·0 cites·19 claims
- 2050US11488973B2Memory device having staircase structure including word line tiers and formation method thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
- 2147US11552089B2Three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 10, 2023·0 cites·20 claims
- 2238US7920021B2Method of applying wire voltage to semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 5, 2011·0 cites·7 claims
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