Inventor · disambiguated record
Zhenghao Gan
Also filed as: GAN ZHENGHAO
17 granted patents·2 pending applications·15 citations·filing 2011–2019
88Inventor score
Files withSEMICONDUCTOR MFG INT SHANGHAI CORP10SEMICONDUCTOR MFG INT SHANGHAI3GAN ZHENGHAO2SEMICONDUCTOR MFG INT CORP2FENG JUNHONG1
Top patents by PatentIndex Score
19 records- 0180US8975703B2MOS transistor, formation method thereof, and SRAM memory cell circuitSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Mar 10, 2015·6 cites·15 claims
- 0271US10490652B2Semiconductor device providing improved read and write margin, and manufacturing method for the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Nov 26, 2019·1 cites·9 claims
- 0371US9117819B2Electrostatic discharge protection structure and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI·Filed 2013·Granted Aug 25, 2015·3 cites·17 claims
- 0465US9178062B2MOS transistor, fabrication method thereof, and SRAM memory cell circuitSEMICONDUCTOR MFG INT CORP·Filed 2013·Granted Nov 3, 2015·2 cites·19 claims
- 0564US9355712B2Electromechanical nonvolatile memorySEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Granted May 31, 2016·1 cites·6 claims
- 0660US8816501B2IC device including package structure and method of forming the sameGAN ZHENGHAO·Filed 2012·Granted Aug 26, 2014·2 cites·20 claims
- 0756US11114548B2Semiconductor device having source and drain in active region and manufacturing method for sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Sep 7, 2021·0 cites·4 claims
- 0850US9679889B2Semiconductor device including electrostatic discharge (ESD) protection circuit and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jun 13, 2017·0 cites·9 claims
- 0949US9502422B2Electromechanical nonvolatile memorySEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Nov 22, 2016·0 cites·11 claims
- 1046US10073935B2Simplified zener diode DC spice modelSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Sep 11, 2018·0 cites·14 claims
- 1146US9455318B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Sep 27, 2016·0 cites·9 claims
- 1243US9970981B2Method and device for temperature measurement of FinFET devicesSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted May 15, 2018·0 cites·19 claims
- 1340US9508717B2Integrated circuit device and repair method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Nov 29, 2016·0 cites·16 claims
- 1439US9637834B2Electrically programmable fuse structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted May 2, 2017·0 cites·17 claims
- 1537US10267840B2Method for testing inter-layer connectionsSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 1635US11417645B2Electrostatic discharge protection structure in a semiconductor deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Aug 16, 2022·0 cites·12 claims
- 1735US8872575B2Semiconductor deviceGAN ZHENGHAO·Filed 2011·Granted Oct 28, 2014·0 cites·16 claims
- 1833US2016071797A1Efuse structure with stressed layerSEMICONDUCTOR MFG INT SHANGHAI·Filed 2015·Application pending·0 cites
- 1931US2013049129A1Semiconductor device and manufacturing method thereofFENG JUNHONG·Filed 2011·Application pending·0 cites
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