Inventor · disambiguated record
Clement Hsingjen Wann
Also filed as: WANN CLEMENT · WANN CLEMENT H · WANN CLEMENT HSINGJEN
285 granted patents·20 pending applications·15,031 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD173TAIWAN SEMICONDUCTOR MFG68WANN CLEMENT HSINGJEN13KO CHIH-HSIN8WU CHENG-HSIEN8
Top patents by PatentIndex Score
305 records- 0199US9859380B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·205 cites·20 claims
- 0299US9601342B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·288 cites·20 claims
- 0399US9548303B2FinFET devices with unique fin shape and the fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·1.3k cites·20 claims
- 0499US9105490B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 11, 2015·1.6k cites·19 claims
- 0599US8836016B2Semiconductor structures and methods with high mobility and high energy bandgap materialsWU CHENG-HSIEN·Filed 2012·Granted Sep 16, 2014·538 cites·20 claims
- 0699US8823065B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·1.3k cites·16 claims
- 0799US8809139B2Fin-last FinFET and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 19, 2014·224 cites·20 claims
- 0899US8716765B2Contact structure of semiconductor deviceWU CHENG-HSIEN·Filed 2012·Granted May 6, 2014·387 cites·20 claims
- 0999US8183134B2Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfacesWU CHENG-HSIEN·Filed 2011·Granted May 22, 2012·186 cites·18 claims
- 1099US8039179B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 18, 2011·121 cites·20 claims
- 1198US11404322B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 1298US9443769B2Wrap-around contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·534 cites·15 claims
- 1398US9245805B2Germanium FinFETs with metal gates and stressorsYEH CHIH CHIEH·Filed 2010·Granted Jan 26, 2016·536 cites·19 claims
- 1498US9171929B2Strained structure of semiconductor device and method of making the strained structureLEE TSUNG-LIN·Filed 2012·Granted Oct 27, 2015·593 cites·20 claims
- 1598US9093530B2Fin structure of FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 28, 2015·1.3k cites·20 claims
- 1698US8816444B2System and methods for converting planar design to FinFET designWANN CLEMENT HSINGJEN·Filed 2012·Granted Aug 26, 2014·1.3k cites·20 claims
- 1798US8618556B2FinFET design and method of fabricating sameWU CHENG-HSIEN·Filed 2011·Granted Dec 31, 2013·205 cites·18 claims
- 1898US8609518B2Re-growing source/drain regions from un-relaxed silicon layerWANN CLEMENT HSINGJEN·Filed 2011·Granted Dec 17, 2013·178 cites·13 claims
- 1998US8486770B1Method of forming CMOS FinFET deviceWU CHENG-HSIEN·Filed 2011·Granted Jul 16, 2013·42 cites·20 claims
- 2098US8264032B2Accumulation type FinFET, circuits and fabrication method thereofYEH CHIH CHIEH·Filed 2010·Granted Sep 11, 2012·73 cites·20 claims
- 2198US7862962B2Integrated circuit layout designTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 4, 2011·46 cites·20 claims
- 2297US11861282B2Integrated circuit fin structure manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 2397US8962400B2In-situ doping of arsenic for source and drain epitaxyTSAI JI-YIN·Filed 2011·Granted Feb 24, 2015·536 cites·21 claims
- 2497US8841701B2FinFET device having a channel defined in a diamond-like shape semiconductor structureLIN YOU-RU·Filed 2011·Granted Sep 23, 2014·530 cites·20 claims
- 2597US8815712B2Method for epitaxial re-growth of semiconductor regionWAN CHENG-TIEN·Filed 2012·Granted Aug 26, 2014·477 cites·20 claims
- 2697US8786019B2CMOS FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 22, 2014·31 cites·20 claims
- 2797US8785285B2Semiconductor devices and methods of manufacture thereofTSAI JI-YIN·Filed 2012·Granted Jul 22, 2014·1.6k cites·20 claims
- 2897US8264021B2Finfets and methods for forming the sameLAI LI-SHYUE·Filed 2010·Granted Sep 11, 2012·79 cites·15 claims
- 2996US11972982B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 3096US11961731B2Method and structure for semiconductor interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 3196US9553025B2Selective Fin-shaping processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·14 cites·20 claims
- 3296US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 3395US10804163B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·9 cites·20 claims
- 3495US9985131B2Source/drain profile for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·11 cites·20 claims
- 3595US9780174B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 3, 2017·10 cites·20 claims
- 3695US9337285B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 10, 2016·9 cites·20 claims
- 3795US9159824B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 3895US8987791B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·18 cites·19 claims
- 3995US8946829B2Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applicationsWANN CLEMENT HSINGJEN·Filed 2011·Granted Feb 3, 2015·17 cites·12 claims
- 4095US8875076B2System and methods for converting planar design to FinFET designTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 28, 2014·35 cites·20 claims
- 4195US8629478B2Fin structure for high mobility multiple-gate transistorKO CHIH-HSIN·Filed 2010·Granted Jan 14, 2014·22 cites·21 claims
- 4293US11942467B2Semiconductor structure, electronic device, and method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
- 4393US9929133B2Semiconductor logic circuits fabricated using multi-layer structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 27, 2018·14 cites·20 claims
- 4493US9595614B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 14, 2017·6 cites·20 claims
- 4593US9196709B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·14 cites·19 claims
- 4693US9136383B2Contact structure of semiconductor deviceWANN CLEMENT HSINGJEN·Filed 2012·Granted Sep 15, 2015·13 cites·20 claims
- 4793US9099494B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·6 cites·20 claims
- 4893US8969156B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·8 cites·20 claims
- 4993US8241823B2Method of fabrication of a semiconductor device having reduced pitchSHIEH MING-FENG·Filed 2011·Granted Aug 14, 2012·11 cites·20 claims
- 5093US7915112B2Metal gate stress film for mobility enhancement in FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Mar 29, 2011·36 cites·20 claims
Showing the top 50 of 305 patent records by PatentIndex Score.
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