Inventor · disambiguated record
Takao Kamoshima
Also filed as: KAMOSHIMA TAKAO
6 granted patents·15 pending applications·14 citations·filing 1999–2018
77Inventor score
Top patents by PatentIndex Score
21 records- 0176US8203210B2Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layersFURUSAWA TAKESHI·Filed 2010·Granted Jun 19, 2012·4 cites·25 claims
- 0268US10490445B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
- 0350US2009184424A1Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 0449US6740564B2Method for manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·4 cites·8 claims
- 0548US2013241067A1Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 0648US2008230847A1Semiconductor device and manufacturing method of the sameFURUSAWA TAKESHI·Filed 2008·Application pending·0 cites
- 0747US2012289032A1Semiconductor device and manufacturing method of the sameFURUSAWA TAKESHI·Filed 2012·Application pending·0 cites
- 0845US6645863B2Method of manufacturing semiconductor device and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 11, 2003·1 cites·15 claims
- 0943US6503836B2Method and apparatus for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 7, 2003·1 cites·14 claims
- 1042US2007029677A1Interconnection structureRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1141US2004207085A1Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 1238US2001017415A1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 1336US2010314620A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 1435US2004036098A1Semiconductor device including a capacitorMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 1535US2004173905A1Interconnection structureRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 1635US2002093097A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 1733US2002081836A1Contact structure, semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 1832US2004017279A1Wiring structureMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 1932US2004130033A1Semiconductor deviceRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2031US6214723B1Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 10, 2001·2 cites·9 claims
- 2131US2019198632A1Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →