Inventor

CHO HANS S

KR48 patents

⚠️ This page may combine multiple inventors who share the name “CHO HANS S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHO HANS S

SAMSUNG ELECTRONICS CO LTD

Fin structure and method of manufacturing fin transistor adopting the fin structure

Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same

Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Poly-Si thin film transistor and organic light-emitting display having the same

Method of manufacturing a thin film transistor

Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same

Poly-Si thin film transistor and organic light-emitting display having the same

Method of manufacturing nanowire

Thin film transistor and method of manufacturing the same

Semiconductor device including single crystal silicon layer

Method of manufacturing thin film transistor

Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Si nanowire substrate

Method of forming a more highly-oriented silicon layer and substrate having the same

Substrate with locally integrated single crystalline silicon layer and method of fabricating the same

Microlens and an image sensor including a microlens

Semiconductor device including gate stack formed on inclined surface and method of fabricating the same

Semiconductor device including gate stack formed on inclined surface and method of fabricating the same

Thin film transistor having double-layered gate electrode and method of manufacturing the thin film transistor

Method of forming single crystalline silicon layer, structure including the same, and method of fabricating thin film transistor using the same

Method of fabricating a capacitor

Method of forming channel region of TFT composed of single crystal Si

CHO HANS S

Method of making light trapping crystalline structures

Photonic structure

Three-dimensional crossbar array

Photonic device and method of making the same

Non-volatile resistive memory cells

Memristors having at least one junction

Method of manufacturing nanowire

HEWLETT PACKARD ENTPR DEV LP

Apparatus having a memory cell and a shunt device

Resistive memory devices with an oxygen-supplying layer

Resistive memory devices with a multi-component electrode

Memristive device switching by alternating polarity pulses

Composite selector electrodes

Sidewall spacers

Multiphase selectors

YIN HUAXIANG

Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device

Poly-Si thin film transistor and organic light-emitting display having the same

Method of forming a microlens and a method for manufacturing an image sensor

Microlens and an image sensor including a microlens

HEWLETT PACKARD DEVELOPMENT CO

Nanowire photonic apparatus employing optical field confinement

Plasmon-enhanced electromagnetic-radiation-emitting devices and methods for fabricating the same

XIANYU WENXU

Single crystal silicon rod fabrication methods and a single crystal silicon rod structure

Semiconductor device and methods thereof

WU WEI

Memristive device

US GOV SEC NAVY

Memristive multi-terminal spiking neuron

PICKETT MATTHEW D

Electrically actuated device

QUITORIANO NATHANIEL J

Nanowire sensor with angled segments that are differently functionalized