Inventor · disambiguated record
Yen-Hung Yeh
Also filed as: YEH YEN-HUNG
25 granted patents·3 pending applications·266 citations·filing 2001–2018
96Inventor score
Top patents by PatentIndex Score
28 records- 0196US10177137B1Electrostatic discharge protection apparatusMSTAR SEMICONDUCTOR INC·Filed 2018·Granted Jan 8, 2019·19 cites·7 claims
- 0287US6458642B1Method of fabricating a sonos deviceMACRONIX INT CO LTD·Filed 2001·Granted Oct 1, 2002·71 cites·10 claims
- 0385US7087968B1Electrostatic discharge protection circuit and semiconductor circuit therewithMACRONIX INT CO LTD·Filed 2005·Granted Aug 8, 2006·13 cites·42 claims
- 0480US7187527B2Electrostatic discharge conduction device and mixed power integrated circuits using sameMACRONIX INT CO LTD·Filed 2004·Granted Mar 6, 2007·29 cites·26 claims
- 0578US9176187B2Digital multi-meter with LCR functionCYRUSTEK CORP·Filed 2014·Granted Nov 3, 2015·5 cites·51 claims
- 0676US6482706B1Method to scale down device dimension using spacer to confine buried drain implantMACRONIX INT CO LTD·Filed 2001·Granted Nov 19, 2002·16 cites·20 claims
- 0775US6834013B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2001·Granted Dec 21, 2004·19 cites·6 claims
- 0873US6649971B1Nitride read-only memory cell for improving second-bit effect and method for making thereofMACRONIX INT CO LTD·Filed 2002·Granted Nov 18, 2003·18 cites·12 claims
- 0972US6587387B1Device and method for testing mask ROM for bitline to bitline isolation leakageMACRONIX INT CO LTD·Filed 2002·Granted Jul 1, 2003·18 cites·12 claims
- 1066US6440803B1Method of fabricating a mask ROM with raised bit-line on each buried bit-lineMACRONIX INT CO LTD·Filed 2002·Granted Aug 27, 2002·10 cites·20 claims
- 1160US6706575B2Method for fabricating a non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Mar 16, 2004·7 cites·20 claims
- 1258US7573102B2ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant padMACRONIX INT CO LTD·Filed 2006·Granted Aug 11, 2009·1 cites·8 claims
- 1355US6531361B1Fabrication method for a memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 11, 2003·5 cites·16 claims
- 1454US6709921B2Fabrication method for a flash memory device with a split floating gate and a structure thereofMACRONIX INT CO LTD·Filed 2001·Granted Mar 23, 2004·6 cites·8 claims
- 1552US7193274B2ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant padMACRONIX INT CO LTD·Filed 2004·Granted Mar 20, 2007·4 cites·8 claims
- 1652US7012305B2Electro-static discharge protection circuit for dual-polarity input/output padMACRONIX INT CO LTD·Filed 2004·Granted Mar 14, 2006·5 cites·8 claims
- 1751US6838691B2Chalcogenide memory and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2002·Granted Jan 4, 2005·4 cites·8 claims
- 1851US6590266B12-bit mask ROM device and fabrication method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 8, 2003·4 cites·19 claims
- 1950US6514807B1Method for fabricating semiconductor device applied system on chipMACRONIX INT CO LTD·Filed 2001·Granted Feb 4, 2003·4 cites·14 claims
- 2048US7291870B2Electrostatic protection circuitMACRONIX INT CO LTD·Filed 2004·Granted Nov 6, 2007·3 cites·9 claims
- 2148US6713821B2Structure of a mask ROM deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 30, 2004·3 cites·9 claims
- 2245US6919607B2Structure of two-bit mask read-only memory device and fabricating method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 19, 2005·2 cites·11 claims
- 2339US10171068B1Input interface circuitMSTAR SEMICONDUCTOR INC·Filed 2018·Granted Jan 1, 2019·0 cites·7 claims
- 2438US6790730B2Fabrication method for mask read only memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Sep 14, 2004·0 cites·13 claims
- 2537US2003107052A1Structure and method for fabricating a semiconductor deviceFiled 2002·Application pending·0 cites
- 2636US7002849B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2004·Granted Feb 21, 2006·0 cites·4 claims
- 2734US2003134463A1Method for fabricating a high voltage deviceFiled 2002·Application pending·0 cites
- 2833US2002155686A1Fabrication method for suppressing a hot carrier effect and leakage currents of I/O devicesFiled 2001·Application pending·0 cites
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