Inventor · disambiguated record
Kurt Matoy
Also filed as: MATOY KURT
9 granted patents·2 pending applications·24 citations·filing 2012–2020
81Inventor score
Top patents by PatentIndex Score
11 records- 0188US8502274B1Integrated circuit including power transistor cells and a connecting lineMATOY KURT·Filed 2012·Granted Aug 6, 2013·18 cites·25 claims
- 0285US10586792B2Semiconductor device including an integrated resistorINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·3 cites·12 claims
- 0380US10186508B2Semiconductor device including transistor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 22, 2019·2 cites·17 claims
- 0465US10957686B2Semiconductor device including an integrated resistor and method of producing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 23, 2021·0 cites·20 claims
- 0561US9728480B2Passivation layer and method of making a passivation layerINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 8, 2017·1 cites·18 claims
- 0649US11424201B2Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 23, 2022·0 cites·13 claims
- 0748US10515910B2Semiconductor device having a porous metal layer and an electronic device having the sameINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 24, 2019·0 cites·17 claims
- 0845US2014117511A1Passivation Layer and Method of Making a Passivation LayerINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 0944US9006899B2Layer stackINFINEON TECHNOLOGIES AG·Filed 2012·Granted Apr 14, 2015·0 cites·7 claims
- 1040US10439062B2Metallization layers for semiconductor devices and methods of forming thereofINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 8, 2019·0 cites·24 claims
- 1131US2016126197A1Semiconductor device having a stress-compensated chip electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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