Inventor · disambiguated record
Akihiko Ohsaki
Also filed as: OHSAKI AKIHIKO
15 granted patents·582 citations·filing 1987–2009
94Inventor score
Top patents by PatentIndex Score
15 records- 0194US4845537AVertical type MOS transistor and method of formation thereofMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jul 4, 1989·101 cites·7 claims
- 0293US5017504AVertical type MOS transistor and method of formation thereofMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 21, 1991·177 cites·10 claims
- 0391US5565708ASemiconductor device comprising composite barrier layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 15, 1996·107 cites·13 claims
- 0479US6624516B2Structure for connecting interconnect lines with interposed layer including metal layers and metallic compound layerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 23, 2003·25 cites·6 claims
- 0578US7906848B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Mar 15, 2011·8 cites·16 claims
- 0672US5313100AMultilayer interconnection structure for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 17, 1994·37 cites·11 claims
- 0770US6664641B2Wiring structure for an integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 16, 2003·17 cites·5 claims
- 0867US5475267AMultilayer interconnection structure for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 12, 1995·29 cites·22 claims
- 0965US6780769B2Method of manufacturing structure for connecting interconnect lines including metal layer with thickness larger than thickness of metallic compound layerRENESAS TECH CORP·Filed 2003·Granted Aug 24, 2004·11 cites·7 claims
- 1061US4953125ASemiconductor memory device having improved connecting structure of bit line and memory cellMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 28, 1990·18 cites·9 claims
- 1158US6198143B1Semiconductor device including a layer of thermally stable titanium silicideMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 6, 2001·22 cites·13 claims
- 1256US5677243AMethod of forming multi-layer interconnectionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 14, 1997·22 cites·22 claims
- 1336US5712140AMethod of manufacturing interconnection structure of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 27, 1998·4 cites·7 claims
- 1430US4959329ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 25, 1990·2 cites·3 claims
- 1530US4887143ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Dec 12, 1989·2 cites·6 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →