Inventor · disambiguated record
Eiichi Okuno
Also filed as: OKUNO EIICHI
50 granted patents·9 pending applications·1,280 citations·filing 1983–2025
98Inventor score
Top patents by PatentIndex Score
59 records- 0197US6573534B1Silicon carbide semiconductor deviceDENSO CORP·Filed 1999·Granted Jun 3, 2003·285 cites·32 claims
- 0297US6455892B1Silicon carbide semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2000·Granted Sep 24, 2002·206 cites·10 claims
- 0395US7365363B2Silicon carbide semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2005·Granted Apr 29, 2008·44 cites·3 claims
- 0494US7825449B2Silicon carbide semiconductor device and related manufacturing methodDENSO CORP·Filed 2008·Granted Nov 2, 2010·36 cites·11 claims
- 0593US6165822ASilicon carbide semiconductor device and method of manufacturing the sameDENSO CORP·Filed 1999·Granted Dec 26, 2000·109 cites·10 claims
- 0692US8193564B2Silicon carbide semiconductor device including deep layerSUZUKI NAOHIRO·Filed 2009·Granted Jun 5, 2012·36 cites·3 claims
- 0792US7994513B2Silicon carbide semiconductor device including deep layerDENSO CORP·Filed 2009·Granted Aug 9, 2011·23 cites·9 claims
- 0892US6482704B1Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistancesDENSO CORP·Filed 2000·Granted Nov 19, 2002·77 cites·44 claims
- 0992US4562237AOne component room temperature curable sealant compositionCEMEDINE CO LTD·Filed 1983·Granted Dec 31, 1985·59 cites·9 claims
- 1091US7824995B2SiC semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2008·Granted Nov 2, 2010·21 cites·49 claims
- 1190US7863682B2SIC semiconductor having junction barrier Schottky diodeDENSO CORP·Filed 2008·Granted Jan 4, 2011·19 cites·8 claims
- 1290US6452228B1Silicon carbide semiconductor deviceDENSO CORP·Filed 2000·Granted Sep 17, 2002·50 cites·17 claims
- 1390US6221700B1Method of manufacturing silicon carbide semiconductor device with high activation rate of impuritiesDENSO CORP·Filed 1999·Granted Apr 24, 2001·105 cites·9 claims
- 1489US7893467B2Silicon carbide semiconductor device having junction barrier Schottky diodeDENSO CORP·Filed 2008·Granted Feb 22, 2011·18 cites·11 claims
- 1586US7851882B2Silicon carbide semiconductor device having junction barrier schottky diodeDENSO CORP·Filed 2008·Granted Dec 14, 2010·13 cites·7 claims
- 1686US7808003B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2008·Granted Oct 5, 2010·13 cites·18 claims
- 1784US7645658B2Method of manufacturing silicon carbide semiconductor deviceDENSO CORP·Filed 2007·Granted Jan 12, 2010·11 cites·12 claims
- 1883US7855412B2Silicon carbide semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2009·Granted Dec 21, 2010·9 cites·5 claims
- 1981US7915705B2SiC semiconductor device having outer periphery structureDENSO CORP·Filed 2008·Granted Mar 29, 2011·9 cites·6 claims
- 2081US7816733B2SiC semiconductor having junction barrier schottky deviceDENSO CORP·Filed 2008·Granted Oct 19, 2010·9 cites·7 claims
- 2179US7825017B2Method of making silicon carbide semiconductor device having multi-layered passivation film with uneven surfacesDENSO CORP·Filed 2009·Granted Nov 2, 2010·8 cites·4 claims
- 2279US7745276B2Method for manufacturing SiC semiconductor deviceDENSO CORP·Filed 2008·Granted Jun 29, 2010·8 cites·17 claims
- 2377US7947555B2Method of making silicon carbide semiconductor deviceDENSO CORP·Filed 2009·Granted May 24, 2011·8 cites·6 claims
- 2477US7838888B2Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the sameDENSO CORP·Filed 2008·Granted Nov 23, 2010·7 cites·7 claims
- 2574US8470091B2SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor deviceKITOU YASUO·Filed 2010·Granted Jun 25, 2013·4 cites·10 claims
- 2674US7855131B2Manufacturing method of a semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2009·Granted Dec 21, 2010·4 cites·5 claims
- 2773US7569496B2Method for manufacturing SiC semiconductor deviceDENSO CORP·Filed 2007·Granted Aug 4, 2009·4 cites·13 claims
- 2873US6841436B2Method of fabricating SiC semiconductor deviceDENSO CORP·Filed 2002·Granted Jan 11, 2005·16 cites·16 claims
- 2972US10126072B2Heat storage unit and heat storage systemDENSO CORP·Filed 2015·Granted Nov 13, 2018·1 cites·11 claims
- 3072US8324704B2Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the sameYAMAMOTO TAKEO·Filed 2010·Granted Dec 4, 2012·3 cites·5 claims
- 3172US7968892B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2007·Granted Jun 28, 2011·3 cites·3 claims
- 3271US10155895B2Composite heat storage materialDENSO CORP·Filed 2015·Granted Dec 18, 2018·1 cites·11 claims
- 3368US8970088B2Thermionic converterKIMURA YUJI·Filed 2010·Granted Mar 3, 2015·2 cites·16 claims
- 3466US7851854B2SiC semiconductor device having bottom layer and method for manufacturing the sameDENSO CORP·Filed 2008·Granted Dec 14, 2010·3 cites·20 claims
- 3564US8154074B2Silicon carbide semiconductor device and manufacturing method of the sameYAMAMOTO KENSAKU·Filed 2009·Granted Apr 10, 2012·3 cites·9 claims
- 3663US7470930B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2006·Granted Dec 30, 2008·2 cites·6 claims
- 3761US8168485B2Semiconductor device making methodENDO TAKESHI·Filed 2009·Granted May 1, 2012·2 cites·19 claims
- 3860US6103423ANegative electrode for secondary cells and a non-aqueous electrolyte secondary cell comprising the same as at least one electrodeDENSO CORP·Filed 1997·Granted Aug 15, 2000·29 cites·18 claims
- 3959US7045879B2Silicon carbide semiconductor device having enhanced carrier mobilityDENSO CORP·Filed 2003·Granted May 16, 2006·7 cites·12 claims
- 4058US7993966B2Method for manufacturing silicon carbide semiconductor device having high channel mobilityDENSO CORP·Filed 2006·Granted Aug 9, 2011·1 cites·41 claims
- 4157US8164100B2Semiconductor device and method of manufacturing thereofFUJIWARA HIROKAZU·Filed 2008·Granted Apr 24, 2012·1 cites·2 claims
- 4257US7713805B2Method of manufacturing silicon carbide semiconductor deviceDENSO CORP·Filed 2007·Granted May 11, 2010·1 cites·13 claims
- 4356US2025211426A1Electronic control unit, key verification method, storage medium storing key verification program, and key management systemDENSO CORP·Filed 2025·Application pending·0 cites
- 4451US7763893B2Silicon carbide semiconductor deviceDENSO CORP·Filed 2007·Granted Jul 27, 2010·0 cites·9 claims
- 4550US2008283845A1Silicon carbide semiconductor device having high channel mobility and method for manufacturing the sameDENSO CORP·Filed 2008·Application pending·0 cites
- 4649US10864922B2Wakefulness maintenance apparatusDENSO CORP·Filed 2019·Granted Dec 15, 2020·0 cites·8 claims
- 4747US11431474B2Verification terminal and verification systemDENSO CORP·Filed 2019·Granted Aug 30, 2022·0 cites·10 claims
- 4845US2009011598A1Method of manufacturing semiconductor device including silicon carbide substrateDENSO CORP·Filed 2008·Application pending·0 cites
- 4944US2009267082A1Semiconductor device and manufacturing method of the sameDENSO CORP·Filed 2009·Application pending·0 cites
- 5043US2009160008A1Semiconductor device and method of manufacturing the sameFUJIWARA HIROKAZU·Filed 2008·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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