Inventor · disambiguated record
Sung-Hoi Hur
Also filed as: HUR SUNG-HOI
38 granted patents·10 pending applications·737 citations·filing 1998–2016
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD33CHO BYUNG-KYU2KOREA ADVANCED INST SCI & TECH2PARK JIN-TAEK2SHIM SUN-IL2
Top patents by PatentIndex Score
48 records- 0198US6376876B1NAND-type flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 23, 2002·291 cites·10 claims
- 0295US8084805B2Three-dimensional microelectronic devices including repeating layer patterns of different thicknessesSHIM SUN-IL·Filed 2009·Granted Dec 27, 2011·41 cites·29 claims
- 0393US8450788B2Three-dimensional microelectronic devices including horizontal and vertical patternsSHIM SUN-IL·Filed 2011·Granted May 28, 2013·14 cites·13 claims
- 0492US9425208B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 23, 2016·17 cites·20 claims
- 0589US6867453B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 15, 2005·28 cites·8 claims
- 0689US6677200B2Method of forming non-volatile memory having floating trap type deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·51 cites·11 claims
- 0787US7391071B2Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 24, 2008·16 cites·20 claims
- 0886US8952438B2Three-dimensional microelectronic devices including horizontal and vertical patternsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 10, 2015·6 cites·16 claims
- 0985US7585710B2Methods of forming electronic devices having partially elevated source/drain structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·10 cites·5 claims
- 1084US6461984B1Semiconductor device using N2O plasma oxide and a method of fabricating the sameKOREA ADVANCED INST SCI & TECH·Filed 2000·Granted Oct 8, 2002·35 cites·10 claims
- 1183US7223659B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·18 claims
- 1282US9698154B2Semiconductor deviceLIM JOON SUNG·Filed 2016·Granted Jul 4, 2017·4 cites·15 claims
- 1381US6559029B2Method of fabricating semiconductor device having trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 6, 2003·31 cites·12 claims
- 1479US6936885B2NAND-type flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 30, 2005·29 cites·6 claims
- 1579US6797570B2NAND-type flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·19 cites·12 claims
- 1677US6677639B2Non-volatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·15 cites·18 claims
- 1775US7538385B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·3 cites·20 claims
- 1874US8134873B2Flash memory device and programming/erasing method of the sameCHOI DONG-UK·Filed 2009·Granted Mar 13, 2012·10 cites·20 claims
- 1974US6064590ANon-volatile static random access memory deviceKOREA ADVANCED INST SCI & TECH·Filed 1998·Granted May 16, 2000·36 cites·14 claims
- 2073US7315055B2Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices having recessed channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 1, 2008·18 cites·9 claims
- 2172US7592665B2Non-volatile memory devices having floating gatesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·5 cites·9 claims
- 2272US7259421B2Non-volatile memory devices having trenchesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 21, 2007·11 cites·31 claims
- 2370US7696556B2Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 13, 2010·4 cites·38 claims
- 2468US8441062B2Nonvolatile memory devices having memory cell transistors therein with lower bandgap source/drain regionsCHO BYUNG-KYU·Filed 2010·Granted May 14, 2013·3 cites·6 claims
- 2567US7411239B2Nand flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·3 cites·7 claims
- 2666US7501322B2Methods of forming non-volatile memory devices having trenchesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·2 cites·12 claims
- 2766US7285815B2EEPROM device having selecting transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 23, 2007·2 cites·8 claims
- 2863US7608507B2NAND flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 27, 2009·2 cites·18 claims
- 2958US7977730B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·0 cites·13 claims
- 3058US6903406B2Cells of nonvolatile memory device with high inter-layer dielectric constantSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 7, 2005·10 cites·7 claims
- 3157US7018894B2EEPROM device having selecting transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 28, 2006·5 cites·5 claims
- 3252US8951881B2Methods of fabricating nonvolatile memory devices including voids between active regions and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 10, 2015·0 cites·9 claims
- 3351US7871921B2Methods of forming interconnection structures for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 18, 2011·3 cites·20 claims
- 3447US6583478B2Transfer circuit of semiconductor device and structure thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 24, 2003·2 cites·8 claims
- 3546US6818510B2Non-volatile memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 16, 2004·2 cites·17 claims
- 3645US8753955B2Methods of fabricating nonvolatile memory devices including voids between active regions and related devicesLEE DONG-SIK·Filed 2011·Granted Jun 17, 2014·0 cites·16 claims
- 3745US7449763B2Method of fabricating cell of nonvolatile memory device with floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·1 cites·10 claims
- 3845US2008093677A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3944US2011101439A1Interconnection structures for semicondcutor devicesPARK JIN-TAEK·Filed 2011·Application pending·0 cites
- 4042US2013181278A1Non-volatile memory device and method for fabricating the deviceLEE SUNG-HUN·Filed 2012·Application pending·0 cites
- 4140US7122426B2Method of fabricating cell of nonvolatile memory device with floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·2 cites·9 claims
- 4240US2006124988A1Methods of fabricating flash memory devices having self-aligned floating gate electrodes and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4339US2009321815A1Non-volatile memory device and method of fabricating the sameSUNG SUK-KANG·Filed 2009·Application pending·0 cites
- 4436US2011233636A1Semiconductor Memory Device and Method of Manufacturing the SameCHO BYUNG-KYU·Filed 2011·Application pending·0 cites
- 4535US2006022276A1Methods of forming semiconductor devices including a resistor in a resistor region and devices so formedPARK JIN-TAEK·Filed 2004·Application pending·0 cites
- 4634US2006033166A1Electronic devices having partially elevated source/drain structures and related methodsPARK MIN-CHEOL·Filed 2004·Application pending·0 cites
- 4734US2003127682A1Non-volatile memory device having improved coupling ratio uniformitySAMSUNG ELECTRONICS CO LTD·Filed 2002·Application pending·0 cites
- 4831US2012223379A1Non-volatile memory devices and methods of manufacturing the sameOH HYUN-SIL·Filed 2012·Application pending·0 cites
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