Inventor · disambiguated record
Johnny Kin On Sin
Also filed as: SIN JOHNNY · SIN JOHNNY K O · SIN JOHNNY KIN ON
28 granted patents·1 pending application·155 citations·filing 1991–2024
95Inventor score
Files withFUJI ELECTRIC CO LTD5JSAB TECH SHENZHEN LTD5UNIV HONG KONG SCIENCE & TECHN3LIANG JIAJIN2PHILIPS CORP2
Top patents by PatentIndex Score
29 records- 0191US9761545B2Isolator and method of manufacturing isolatorFUJI ELECTRIC CO LTD·Filed 2016·Granted Sep 12, 2017·10 cites·18 claims
- 0289US12408398B2Power semiconductor device and preparation method thereofJSAB TECH SHENZHEN LTD·Filed 2023·Granted Sep 2, 2025·1 cites·4 claims
- 0388US11967631B1Power semiconductor device and manufacturing method thereofJSAB TECH SHENZHEN LTD·Filed 2023·Granted Apr 23, 2024·1 cites·10 claims
- 0481US7220925B2Inputting apparatusSONY CORP·Filed 2005·Granted May 22, 2007·9 cites·7 claims
- 0579US9318784B2Isolator and isolator manufacturing methodFUJI ELECTRIC CO LTD·Filed 2013·Granted Apr 19, 2016·5 cites·12 claims
- 0676US9560722B2Power system-on-chip architectureUNIV HONG KONG SCIENCE & TECH·Filed 2014·Granted Jan 31, 2017·4 cites·20 claims
- 0773US12501646B2Pi-type trench gate silicon carbide MOSFET device and fabrication method thereofJSAB TECH SHENZHEN LTD·Filed 2024·Granted Dec 16, 2025·0 cites·3 claims
- 0873US5982004APolysilicon devices and a method for fabrication thereofUNIV HONG KONG SCIENCE & TECHN·Filed 1997·Granted Nov 9, 1999·41 cites·2 claims
- 0969US5243214APower integrated circuit with latch-up preventionPHILIPS CORP·Filed 1992·Granted Sep 7, 1993·31 cites·8 claims
- 1064US9647077B2Power semiconductor devices having a semi-insulating field plateHKG TECH LTD·Filed 2014·Granted May 9, 2017·2 cites·15 claims
- 1160US12237410B1Trench gate silicon carbide MOSFET device and fabrication method thereofJSAB TECH SHENZHEN LTD·Filed 2024·Granted Feb 25, 2025·0 cites·10 claims
- 1260US6963140B2Transistor having multiple gate padsANALOG POWER INTELLECTUAL PROP·Filed 2003·Granted Nov 8, 2005·13 cites·4 claims
- 1359US8981460B2Power semiconductor field effect transistor structure with charge trapping material in the gate dielectricSIN JOHNNY KIN ON·Filed 2011·Granted Mar 17, 2015·2 cites·39 claims
- 1457US9755043B2Trench gate power semiconductor field effect transistorFUNG SHUK-WA·Filed 2014·Granted Sep 5, 2017·2 cites·48 claims
- 1556US12363930B2Electron extraction type free-wheeling diode device and preparation method thereofJSAB TECH SHENZHEN LTD·Filed 2022·Granted Jul 15, 2025·0 cites·12 claims
- 1656US9287344B2Monolithic magnetic induction deviceSIN JOHNNY KIN ON·Filed 2011·Granted Mar 15, 2016·1 cites·41 claims
- 1756US2024079275A1Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Application pending·0 cites
- 1850US10593767B2Field plate structure for power semiconductor device and manufacturing method thereofNG CHUN WAI·Filed 2014·Granted Mar 17, 2020·0 cites·15 claims
- 1948US6992352B2Trenched DMOS devices and methods and processes for making sameANALOG POWER LTD·Filed 2003·Granted Jan 31, 2006·6 cites·9 claims
- 2046US5227653ALateral trench-gate bipolar transistorsPHILIPS CORP·Filed 1991·Granted Jul 13, 1993·11 cites·9 claims
- 2145US5869847AThin film transistorUNIV HONG KONG SCIENCE & TECHN·Filed 1997·Granted Feb 9, 1999·11 cites·10 claims
- 2242US9397178B2Split gate power semiconductor field effect transistorLIANG JIAJIN·Filed 2014·Granted Jul 19, 2016·0 cites·7 claims
- 2341US9825149B2Split gate power semiconductor field effect transistorLIANG JIAJIN·Filed 2016·Granted Nov 21, 2017·0 cites·11 claims
- 2439US10249720B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Apr 2, 2019·0 cites·9 claims
- 2539US9438227B2Gate-controlled p-i-n switch with a charge trapping material in the gate dielectric and a self-depleted channelUNIV HONG KONG SCIENCE & TECH·Filed 2014·Granted Sep 6, 2016·0 cites·15 claims
- 2639US5982081AField emission display having elongate emitter structuresUNIV HONG KONG SCIENCE & TECHN·Filed 1996·Granted Nov 9, 1999·5 cites·13 claims
- 2738US11081575B2Insulated gate bipolar transistor device and method for manufacturing the sameZHONG SHAN HONSON ELECTRONIC TECH LIMITED·Filed 2019·Granted Aug 3, 2021·0 cites·12 claims
- 2837US11127822B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Sep 21, 2021·0 cites·27 claims
- 2923US11004935B2Solid power semiconductor field effect transistor structureLIU WAI YEE·Filed 2016·Granted May 11, 2021·0 cites·19 claims
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