Inventor · disambiguated record
In-Kyeong Yoo
Also filed as: YOO IN SUN · YOO IN-KYEONG
79 granted patents·18 pending applications·1,100 citations·filing 1995–2018
99Inventor score
Top patents by PatentIndex Score
97 records- 0198US8043926B2Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·48 cites·10 claims
- 0298US7842991B2Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·99 cites·9 claims
- 0397US7417271B2Electrode structure having at least two oxide layers and non-volatile memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 26, 2008·97 cites·19 claims
- 0497US7015500B2Memory device utilizing carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 21, 2006·215 cites·18 claims
- 0594US6479924B1Ferroelectric emitterSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 12, 2002·54 cites·6 claims
- 0693US7602042B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·26 cites·21 claims
- 0790US7521704B2Memory device using multi-layer with a graded resistance changeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·20 cites·13 claims
- 0887US7400027B2Nonvolatile memory device having two or more resistance elements and methods of forming and using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·18 cites·7 claims
- 0987US7378328B2Method of fabricating memory device utilizing carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 27, 2008·18 cites·20 claims
- 1087US6992923B2Single transistor type magnetic random access memory device and method of operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 31, 2006·12 cites·5 claims
- 1186US7935953B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 3, 2011·11 cites·16 claims
- 1286US7835167B2Magnetic domain data storage devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 16, 2010·6 cites·14 claims
- 1385US7414295B2Transistor and method of operating transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 19, 2008·8 cites·14 claims
- 1485US6867999B2Memory device including a transistor having functions of RAM and ROMSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 15, 2005·26 cites·10 claims
- 1584US5812442AFerroelectric memory using leakage current and multi-numeration system ferroelectric memorySAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 22, 1998·57 cites·11 claims
- 1683US5946284ADisk apparatus using ferroelectric thin filmSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 31, 1999·41 cites·5 claims
- 1782US9477101B2Nanostructured acousto-optic device, and optical scanner, optical modulator, and holographic display apparatus using the nanostructured acousto-optic deviceHAN SEUNG-HOON·Filed 2012·Granted Oct 25, 2016·5 cites·45 claims
- 1882US8456889B2Semiconductor devices including variable resistance materials and methods of operating the sameKIM YOUNG-BAE·Filed 2011·Granted Jun 4, 2013·6 cites·34 claims
- 1982US8203863B2Nonvolatile memory cells and nonvolatile memory devices including the sameKIM HO-JUNG·Filed 2010·Granted Jun 19, 2012·8 cites·21 claims
- 2082US7115306B2Method of horizontally growing carbon nanotubes and device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 3, 2006·12 cites·15 claims
- 2180US6913984B2Method of manufacturing memory with nano dotsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·28 cites·8 claims
- 2280US6476402B1Apparatus for pyroelectric emission lithography using patterned emitterSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 5, 2002·12 cites·9 claims
- 2379US8471232B2Resistive memory devices including vertical transistor arrays and related fabrication methodsKIM DEOK-KEE·Filed 2010·Granted Jun 25, 2013·6 cites·20 claims
- 2477US10418417B1Multi-level synaptic weight device of vertical cross-point structure in three dimension and fabrication thereofSK HYNIX INC·Filed 2018·Granted Sep 17, 2019·5 cites·20 claims
- 2577US6815783B2Single transistor type magnetic random access memory device and method of operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 9, 2004·20 cites·3 claims
- 2676US7714313B2Resistive RAM having at least one varistor and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 11, 2010·9 cites·28 claims
- 2776US7479212B2Method of manufacturing high-density data storage mediumSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 20, 2009·2 cites·4 claims
- 2876US6740925B2Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 25, 2004·15 cites·12 claims
- 2975US7407856B2Method of manufacturing a memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·4 cites·10 claims
- 3075US7170843B2High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 30, 2007·8 cites·42 claims
- 3173US7936044B2Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 3, 2011·4 cites·26 claims
- 3272US8101983B2Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the sameSEO SUN-AE·Filed 2007·Granted Jan 24, 2012·7 cites·8 claims
- 3370US7355951B2High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the systemSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 8, 2008·7 cites·41 claims
- 3470US6404667B12T-1C ferroelectric random access memory and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 11, 2002·18 cites·13 claims
- 3568US6794666B2Electron emission lithography apparatus and method using a selectively grown carbon nanotubeSAMSUGN ELECTRONICS CO LTD·Filed 2002·Granted Sep 21, 2004·14 cites·3 claims
- 3667US7943926B2Nonvolatile memory device and nonvolatile memory array including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 17, 2011·5 cites·9 claims
- 3767US7821809B2Nonvolatile memory device and method including resistor and transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 26, 2010·6 cites·15 claims
- 3865US6077716AMatrix type multiple numeration system ferroelectric random access memory using leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 20, 2000·20 cites·3 claims
- 3965US5986298AMatrix type multiple numeration system ferroelectric random access memory using leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 16, 1999·20 cites·10 claims
- 4064US7638361B2Method of manufacturing transistor that utilizes current direction limiting units between phase change layer and bit lines and between phase change layer and word linesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 29, 2009·1 cites·10 claims
- 4163US8509430B2Storage devices having a security function and methods of securing data stored in the storage deviceKIM HO-JUNG·Filed 2010·Granted Aug 13, 2013·1 cites·25 claims
- 4263US8350262B2Nonvolatile memory device and nonvolatile memory array including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 8, 2013·2 cites·12 claims
- 4363US6891241B2Single transistor type magnetic random access memory device and method of operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 10, 2005·7 cites·5 claims
- 4462US8526288B2Optical elements including light sources and waveguides and information storage devices including the sameLEE SUNG-CHUL·Filed 2011·Granted Sep 3, 2013·2 cites·22 claims
- 4562US7901586B2Method of manufacturing self-ordered nanochannel-array and method of manufacturing nanodot using the nanochannel-arraySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·1 cites·5 claims
- 4662US6687210B2High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 3, 2004·4 cites·60 claims
- 4762US6566666B2Method and apparatus for pyroelectric lithography using patterned emitterSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 20, 2003·3 cites·9 claims
- 4861US8357992B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·1 cites·12 claims
- 4959US6885138B1Ferroelectric emitterSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 26, 2005·6 cites·7 claims
- 5058US6838727B2Memory device using a transistor and one resistant element for storageSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 4, 2005·5 cites·30 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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