Inventor · disambiguated record
Koichiro Inazawa
Also filed as: INAZAWA KOICHIRO · INAZAWA LEGAL REPRESENTATIVE R · INAZAWA LEGAL REPRESENTATIVE RIE · OHIWA TOKUHISA
23 granted patents·6 pending applications·620 citations·filing 1994–2009
96Inventor score
Top patents by PatentIndex Score
29 records- 0193US7344993B2Low-pressure removal of photoresist and etch residueTOKYO ELECTRON LTD INC·Filed 2005·Granted Mar 18, 2008·39 cites·43 claims
- 0293US5595627APlasma etching methodTOKYO ELECTRON LTD·Filed 1996·Granted Jan 21, 1997·171 cites·18 claims
- 0388US7625494B2Plasma etching method and plasma etching unitTOKYO ELECTRON LTD·Filed 2004·Granted Dec 1, 2009·35 cites·14 claims
- 0488US5770098AEtching processTOKYO ELECTRON LTD·Filed 1994·Granted Jun 23, 1998·144 cites·11 claims
- 0586US5772833APlasma etching apparatusTOKYO ELECTRON LTD·Filed 1994·Granted Jun 30, 1998·57 cites·14 claims
- 0680US5717294APlasma process apparatusTOSHIBA KK·Filed 1995·Granted Feb 10, 1998·65 cites·10 claims
- 0775US6670276B1Plasma processing methodTOKYO ELECTRON LTD·Filed 2000·Granted Dec 30, 2003·19 cites·3 claims
- 0871US7030028B2Etching methodNEC CORP·Filed 2001·Granted Apr 18, 2006·14 cites·15 claims
- 0970US7700494B2Low-pressure removal of photoresist and etch residueTOKYO ELECTRON LTD INC·Filed 2004·Granted Apr 20, 2010·14 cites·45 claims
- 1060US6780342B1Method of etching and method of plasma treatmentTOKYO ELECTRON LTD·Filed 2000·Granted Aug 24, 2004·7 cites·35 claims
- 1159US5705081AEtching methodTOKYO ELECTRON LTD·Filed 1995·Granted Jan 6, 1998·24 cites·7 claims
- 1257US7344991B2Method and apparatus for multilayer photoresist dry developmentTOKYO ELECTRON LTD·Filed 2003·Granted Mar 18, 2008·6 cites·7 claims
- 1357US7163887B2Method for fabricating a semiconductor deviceTOKYO ELECTRON LTD·Filed 2004·Granted Jan 16, 2007·5 cites·22 claims
- 1457US7125806B2Etching methodTOKYO ELECTRON LTD·Filed 2002·Granted Oct 24, 2006·8 cites·12 claims
- 1556US8840753B2Plasma etching unitHONDA MASANOBU·Filed 2009·Granted Sep 23, 2014·0 cites·20 claims
- 1654US8048325B2Method and apparatus for multilayer photoresist dry developmentTOKYO ELECTRON LTD·Filed 2008·Granted Nov 1, 2011·1 cites·7 claims
- 1754US7326650B2Method of etching dual damascene structureTOKYO ELECTRON LTD·Filed 2001·Granted Feb 5, 2008·6 cites·25 claims
- 1850US7285498B2Etching methodTOSHIBA KK·Filed 2004·Granted Oct 23, 2007·2 cites·19 claims
- 1946US7517468B2Etching methodTOKYO ELECTRON LTD·Filed 2003·Granted Apr 14, 2009·1 cites·11 claims
- 2045US7119011B2Semiconductor device and manufacturing method thereofTOKYO ELECTRON LTD·Filed 2004·Granted Oct 10, 2006·2 cites·7 claims
- 2140US7211197B2Etching method and plasma processing methodTOKYO ELECTRON LTD·Filed 2004·Granted May 1, 2007·0 cites·12 claims
- 2238US2005136681A1Method and apparatus for removing photoresist from a substrateTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 2337US2004173573A1Oxide film etching methodTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 2437US2005136666A1Method and apparatus for etching an organic layerIBM·Filed 2004·Application pending·0 cites
- 2536US2003102087A1Plasma processing apparatus and processing methodFiled 2002·Application pending·0 cites
- 2635US7582220B1Etching methodTOKYO ELECTRON LTD·Filed 2000·Granted Sep 1, 2009·0 cites·5 claims
- 2735US2005103441A1Etching method and plasma etching apparatusFiled 2004·Application pending·0 cites
- 2833US6986851B2Dry developing methodTOKYO ELECTRON LTD·Filed 2002·Granted Jan 17, 2006·0 cites·13 claims
- 2932US2002055263A1Oxide film etching methodFiled 2001·Application pending·0 cites
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