Inventor · disambiguated record
Kaizad Mistry
Also filed as: MISTRY KAIZAD · MISTRY KAIZAD R · MISTRY KAIZAD RUMY
25 granted patents·8 pending applications·1,517 citations·filing 1990–2021
97Inventor score
Top patents by PatentIndex Score
33 records- 0199US6885084B2Semiconductor transistor having a stressed channelINTEL CORP·Filed 2003·Granted Apr 26, 2005·159 cites·12 claims
- 0299US6861318B2Semiconductor transistor having a stressed channelINTEL CORP·Filed 2003·Granted Mar 1, 2005·165 cites·11 claims
- 0399US6621131B2Semiconductor transistor having a stressed channelINTEL CORP·Filed 2001·Granted Sep 16, 2003·534 cites·20 claims
- 0497US8258057B2Copper-filled trench contact for transistor performance improvementKUHN KELIN J·Filed 2006·Granted Sep 4, 2012·53 cites·13 claims
- 0594US8766372B2Copper-filled trench contact for transistor performance improvementKUHN KELIN J·Filed 2012·Granted Jul 1, 2014·15 cites·18 claims
- 0690US5930605ACompact self-aligned body contact silicon-on-insulator transistorsDIGITAL EQUIPMENT CORP·Filed 1997·Granted Jul 27, 1999·75 cites·17 claims
- 0790US5821575ACompact self-aligned body contact silicon-on-insulator transistorDIGITAL EQUIPMENT CORP·Filed 1996·Granted Oct 13, 1998·72 cites·4 claims
- 0888US5617283ASelf-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clampsDIGITAL EQUIPMENT CORP·Filed 1996·Granted Apr 1, 1997·83 cites·11 claims
- 0985US6716046B2Field effect transistor structure with self-aligned raised source/drain extensionsINTEL CORP·Filed 2002·Granted Apr 6, 2004·27 cites·12 claims
- 1085US5262344AN-channel clamp for ESD protection in self-aligned silicided CMOS processDIGITAL EQUIPMENT CORP·Filed 1991·Granted Nov 16, 1993·60 cites·10 claims
- 1184US6956263B1Field effect transistor structure with self-aligned raised source/drain extensionsINTEL CORP·Filed 1999·Granted Oct 18, 2005·43 cites·2 claims
- 1282US6586294B1Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masksINTEL CORP·Filed 2002·Granted Jul 1, 2003·22 cites·15 claims
- 1382US6078487AElectro-static discharge protection device having a modulated control input terminalDIGITAL EQUIPMENT CORP·Filed 1997·Granted Jun 20, 2000·56 cites·21 claims
- 1481US5021853AN-channel clamp for ESD protection in self-aligned silicided CMOS processDIGITAL EQUIPMENT CORP·Filed 1990·Granted Jun 4, 1991·51 cites·9 claims
- 1574US2022115505A1Copper-filled trench contact for transistor performance improvementINTEL CORP·Filed 2021·Application pending·0 cites
- 1669US6362034B1Method of forming MOSFET gate electrodes having reduced depletion region growth sensitivity to applied electric fieldINTEL CORP·Filed 1999·Granted Mar 26, 2002·28 cites·14 claims
- 1767US6803285B2Method of fabricating dual threshold voltage n-channel and p-channel mosfets with a single extra masked implant operationINTEL CORP·Filed 2002·Granted Oct 12, 2004·11 cites·13 claims
- 1866US5525829AField effect transistor with integrated schottky diode clampDIGITAL EQUIPMENT CORP·Filed 1994·Granted Jun 11, 1996·24 cites·28 claims
- 1963US6693331B2Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operationINTEL CORP·Filed 1999·Granted Feb 17, 2004·18 cites·5 claims
- 2059US9735270B2Semiconductor transistor having a stressed channelINTEL CORP·Filed 2015·Granted Aug 15, 2017·0 cites·28 claims
- 2157US6979609B2Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masksINTEL CORP·Filed 2003·Granted Dec 27, 2005·5 cites·6 claims
- 2257US2017263721A1Copper-filled trench contact for transistor performance improvementINTEL CORP·Filed 2017·Application pending·0 cites
- 2357US2014264879A1Copper-filled trench contact for transistor performance improvementKUHN KELIN J·Filed 2014·Application pending·0 cites
- 2456US9490364B2Semiconductor transistor having a stressed channelMURTHY ANAND·Filed 2009·Granted Nov 8, 2016·0 cites·16 claims
- 2553US6717221B2Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masksINTEL CORP·Filed 2003·Granted Apr 6, 2004·4 cites·4 claims
- 2653US2009065808A1Semiconductor transistor having a stressed channelMURTHY ANAND·Filed 2008·Application pending·0 cites
- 2749US11804470B2Wafer level passive heat spreader interposer to enable improved thermal solution for stacked dies in multi-chips package and warpage controlINTEL CORP·Filed 2019·Granted Oct 31, 2023·0 cites·20 claims
- 2848US2005184311A1Semiconductor transistor having a stressed channelFiled 2005·Application pending·0 cites
- 2947US6903598B2Static, low-voltage fuse-based cell with high-voltage programmingINTEL CORP·Filed 2002·Granted Jun 7, 2005·6 cites·18 claims
- 3046US2007034945A1PMOS transistor strain optimization with raised junction regionsBOHR MARK T·Filed 2006·Application pending·0 cites
- 3138US6352913B1Damascene process for MOSFET fabricationCOMPAQ COMPUTER CORP·Filed 1999·Granted Mar 5, 2002·6 cites·24 claims
- 3237US2001033000A1Field effect transistor structure with self-aligned raised source/drain extensionsFiled 2001·Application pending·0 cites
- 3337US2004262683A1PMOS transistor strain optimization with raised junction regionsFiled 2003·Application pending·0 cites
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