Inventor · disambiguated record
Ian R. Post
Also filed as: POST IAN R · POST IAN R C
24 granted patents·1 pending application·626 citations·filing 1993–2024
96Inventor score
Top patents by PatentIndex Score
25 records- 0198US6368931B1Thin tensile layers in shallow trench isolation and method of making sameINTEL CORP·Filed 2000·Granted Apr 9, 2002·283 cites·25 claims
- 0295US7226843B2Indium-boron dual halo MOSFETINTEL CORP·Filed 2002·Granted Jun 5, 2007·136 cites·16 claims
- 0394US7541239B2Selective spacer formation on transistors of different classes on the same deviceINTEL CORP·Filed 2006·Granted Jun 2, 2009·26 cites·14 claims
- 0493US7943468B2Penetrating implant for forming a semiconductor deviceINTEL CORP·Filed 2008·Granted May 17, 2011·20 cites·9 claims
- 0592US9219155B2Multi-threshold voltage devices and associated techniques and configurationsINTEL CORP·Filed 2013·Granted Dec 22, 2015·9 cites·20 claims
- 0686US2024322037A1Multi-threshold voltage devices and associated techniques and configurationsSONY GROUP CORP·Filed 2024·Application pending·0 cites
- 0782US6627506B2Thin tensile layers in shallow trench isolation and method of making sameINTEL CORP·Filed 2001·Granted Sep 30, 2003·23 cites·15 claims
- 0882US6586294B1Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masksINTEL CORP·Filed 2002·Granted Jul 1, 2003·22 cites·15 claims
- 0981US11437511B2Multi-threshold voltage devices and associated techniques and configurationsSONY GROUP CORP·Filed 2020·Granted Sep 6, 2022·1 cites·19 claims
- 1079US12021141B2Multi-threshold voltage devices and associated techniques and configurationsSONY GROUP CORP·Filed 2022·Granted Jun 25, 2024·0 cites·15 claims
- 1174US8174060B2Selective spacer formation on transistors of different classes on the same deviceCURELLO GIUSEPPE·Filed 2011·Granted May 8, 2012·3 cites·1 claims
- 1274US7560780B2Active region spacer for semiconductor devices and method to form the sameINTEL CORP·Filed 2005·Granted Jul 14, 2009·4 cites·4 claims
- 1372US9761713B2Multi-threshold voltage devices and associated techniques and configurationsINTEL CORP·Filed 2015·Granted Sep 12, 2017·1 cites·23 claims
- 1468US5561073AMethod of fabricating an isolation trench for analog bipolar devices in harsh environmentsFiled 1994·Granted Oct 1, 1996·38 cites·10 claims
- 1567US6803285B2Method of fabricating dual threshold voltage n-channel and p-channel mosfets with a single extra masked implant operationINTEL CORP·Filed 2002·Granted Oct 12, 2004·11 cites·13 claims
- 1665US8154067B2Selective spacer formation on transistors of different classes on the same deviceCURELLO GIUSEPPE·Filed 2009·Granted Apr 10, 2012·2 cites·1 claims
- 1763US6693331B2Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operationINTEL CORP·Filed 1999·Granted Feb 17, 2004·18 cites·5 claims
- 1862US8426927B2Penetrating implant for forming a semiconductor deviceCURELLO GIUSEPPE·Filed 2011·Granted Apr 23, 2013·1 cites·4 claims
- 1959US10573747B2Multi-threshold voltage devices and associated techniques and configurationsINTEL CORP·Filed 2016·Granted Feb 25, 2020·0 cites·15 claims
- 2057US6979609B2Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masksINTEL CORP·Filed 2003·Granted Dec 27, 2005·5 cites·6 claims
- 2153US6717221B2Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masksINTEL CORP·Filed 2003·Granted Apr 6, 2004·4 cites·4 claims
- 2252US8741720B2Penetrating implant for forming a semiconductor deviceCURELLO GIUSEPPE·Filed 2013·Granted Jun 3, 2014·0 cites·7 claims
- 2351US5565370AMethod of enhancing the current gain of bipolar junction transistorsUNITED TECHNOLOGIES CORP·Filed 1995·Granted Oct 15, 1996·12 cites·19 claims
- 2437US5420050AMethod of enhancing the current gain of bipolar junction transistorsUNITED TECHNOLOGIES CORP·Filed 1993·Granted May 30, 1995·5 cites·20 claims
- 2530US5670394AMethod of making bipolar transistor having amorphous silicon contact as emitter diffusion sourceUNITED TECHNOLOGIES CORP·Filed 1994·Granted Sep 23, 1997·2 cites·12 claims
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