Inventor · disambiguated record
Kan-Yuan Lee
Also filed as: LEE KAN-YUAN
7 granted patents·1 pending application·104 citations·filing 1996–2014
85Inventor score
Top patents by PatentIndex Score
8 records- 0181US6207535B1Method of forming shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2000·Granted Mar 27, 2001·35 cites·22 claims
- 0264US5686335AMethod of making high-performance and reliable thin film transistor (TFT) using plasma hydrogenation with a metal shield on the TFT channelTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Nov 11, 1997·28 cites·24 claims
- 0355US5796150AHigh-performance and reliable thin film transistor (TFT) using plasma hydrogenation with a metal shield on the TFT channelTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 18, 1998·18 cites·3 claims
- 0446US5707895AThin film transistor performance enhancement by water plasma treatmentTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 13, 1998·13 cites·17 claims
- 0543US2015042907A1Touch panel with an antireflection layerLUXTALTEK CORP·Filed 2014·Application pending·0 cites
- 0637US6225219B1Method of stabilizing anti-reflection coating layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 1, 2001·7 cites·16 claims
- 0730US6221761B1Method of stabilizing anti-reflection coating layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 24, 2001·2 cites·19 claims
- 0824US5834342ASelf-aligned silicidation of TFT source-drain regionTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Nov 10, 1998·1 cites·12 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →