Inventor · disambiguated record
Nobuaki Teraguchi
Also filed as: TERAGUCHI NOBUAKI
25 granted patents·6 pending applications·593 citations·filing 1995–2015
97Inventor score
Top patents by PatentIndex Score
31 records- 0198US6177685B1Nitride-type III-V HEMT having an InN 2DEG channel layerSHARP KK·Filed 1999·Granted Jan 23, 2001·224 cites·10 claims
- 0285US9991415B2Display device and method of producing display deviceSHARP KK·Filed 2015·Granted Jun 5, 2018·5 cites·9 claims
- 0382US5751021ASemiconductor light-emitting deviceSHARP KK·Filed 1996·Granted May 12, 1998·81 cites·5 claims
- 0480US6201265B1Group III-V type nitride compound semiconductor device and method of manufacturing the sameSHARP KK·Filed 1998·Granted Mar 13, 2001·47 cites·11 claims
- 0576US7468524B2Field-effect transistorSHARP KK·Filed 2006·Granted Dec 23, 2008·5 cites·21 claims
- 0676US6521998B1Electrode structure for nitride III-V compound semiconductor devicesSHARP KK·Filed 1999·Granted Feb 18, 2003·35 cites·14 claims
- 0775US7745852B2Hetero junction field effect transistor and method of fabricating the sameSHARP KK·Filed 2007·Granted Jun 29, 2010·5 cites·4 claims
- 0874US9111839B2Epitaxial wafer for heterojunction type field effect transistorSHARP KK·Filed 2013·Granted Aug 18, 2015·4 cites·2 claims
- 0974US5747827AOptoelectronic semiconductor device having a minibandSHARP KK·Filed 1996·Granted May 5, 1998·46 cites·33 claims
- 1074US5701035AElectrode structure and method for fabricating the sameSHARP KK·Filed 1995·Granted Dec 23, 1997·24 cites·3 claims
- 1172US9660068B2Nitride semiconductorSHARP KK·Filed 2014·Granted May 23, 2017·2 cites·7 claims
- 1269US7425721B2Field-effect transistorSHARP KK·Filed 2007·Granted Sep 16, 2008·4 cites·16 claims
- 1362US5587609AII-VI group compound semiconductor device metallic nitride ohmic contact for p-typeSHARP KK·Filed 1995·Granted Dec 24, 1996·22 cites·6 claims
- 1460US6348704B1Semiconductor device having successful schottky characteristicsSHARP KK·Filed 2000·Granted Feb 19, 2002·8 cites·9 claims
- 1553US7973338B2Hetero junction field effect transistor and method of fabricating the sameSHARP KK·Filed 2009·Granted Jul 5, 2011·0 cites·4 claims
- 1652US6429111B2Methods for fabricating an electrode structureSHARP KK·Filed 2000·Granted Aug 6, 2002·3 cites·5 claims
- 1752US5917196AGroup III-V type nitride compound semiconductor light-emitting deviceSHARP KK·Filed 1997·Granted Jun 29, 1999·15 cites·8 claims
- 1851US6222204B1Electrode structure and method for fabricating the sameSHARP KK·Filed 1999·Granted Apr 24, 2001·8 cites·7 claims
- 1950US7145237B2Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereofSHARP KK·Filed 2004·Granted Dec 5, 2006·4 cites·2 claims
- 2048US5966629AMethod for fabricating an electrode structureSHARP KK·Filed 1997·Granted Oct 12, 1999·7 cites·14 claims
- 2148US5786269AII-VI group compound semiconductor device and method for manufacturing the sameSHARP KK·Filed 1996·Granted Jul 28, 1998·12 cites·4 claims
- 2244US2016233209A1Semiconductor deviceSHARP KK·Filed 2014·Application pending·0 cites
- 2343US6043514AGroup III-V type nitride semiconductor deviceSHARP KK·Filed 1998·Granted Mar 28, 2000·10 cites·7 claims
- 2442US2015069575A1Nitride semiconductor growth apparatus, and epitaxial wafer for nitride semiconductor power deviceSHARP KK·Filed 2013·Application pending·0 cites
- 2541US6033929AMethod for making II-VI group compound semiconductor deviceSHARP KK·Filed 1996·Granted Mar 7, 2000·9 cites·10 claims
- 2640US5571391AElectrode structure and method for fabricating the sameSHARP KK·Filed 1995·Granted Nov 5, 1996·6 cites·6 claims
- 2740US2013020581A1Epitaxial wafer including nitride-based semiconductor layersSHARP KK·Filed 2012·Application pending·0 cites
- 2839US5767536AII-VI group compound semiconductor deviceSHARP KK·Filed 1996·Granted Jun 16, 1998·7 cites·20 claims
- 2939US2015069407A1Group iii nitride semiconductor multilayer substrate and group iii nitride semiconductor field effect transistorSHARP KK·Filed 2013·Application pending·0 cites
- 3036US2010301393A1Field effect transistor and manufacturing method thereforTERAGUCHI NOBUAKI·Filed 2010·Application pending·0 cites
- 3131US2016329419A1Nitride semiconductor layered body, method for manufacturing the same, and nitride semiconductor deviceSHARP KK·Filed 2015·Application pending·0 cites
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