Inventor · disambiguated record
Donald R. Disney
Also filed as: DISNEY DONALD · DISNEY DONALD R · DISNEY DONALD RAY
177 granted patents·23 pending applications·5,539 citations·filing 1995–2019
99Inventor score
Files withPOWER INTEGRATIONS INC66ADVANCED ANALOGIC TECH INC35DISNEY DONALD R31AVOGY INC22GLOBALFOUNDRIES SG PTE LTD14
Top patents by PatentIndex Score
200 records- 0199US6207994B1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 1999·Granted Mar 27, 2001·367 cites·7 claims
- 0298US7791132B2High-voltage vertical transistor with a multi-gradient drain doping profilePOWER INTEGRATIONS INC·Filed 2010·Granted Sep 7, 2010·40 cites·8 claims
- 0398US7719054B2High-voltage lateral DMOS deviceADVANCED ANALOGIC TECH INC·Filed 2006·Granted May 18, 2010·58 cites·18 claims
- 0498US7683426B2High-voltage lateral DMOS device with diode clampADVANCED ANALOGIC TECH INC·Filed 2007·Granted Mar 23, 2010·51 cites·8 claims
- 0598US7605428B2High-voltage depletion mode MOSFETADVANCED ANALOGIC TECH INC·Filed 2007·Granted Oct 20, 2009·54 cites·6 claims
- 0698US7335944B2High-voltage vertical transistor with a multi-gradient drain doping profilePOWER INTEGRATIONS INC·Filed 2007·Granted Feb 26, 2008·89 cites·6 claims
- 0798US7221011B2High-voltage vertical transistor with a multi-gradient drain doping profilePOWER INTEGRATIONS INC·Filed 2005·Granted May 22, 2007·92 cites·28 claims
- 0898US6573558B2High-voltage vertical transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2001·Granted Jun 3, 2003·137 cites·25 claims
- 0997US8258575B2Isolated drain-centric lateral MOSFETWILLIAMS RICHARD K·Filed 2010·Granted Sep 4, 2012·25 cites·10 claims
- 1097US7812393B2High-voltage extended drain MOSFETADVANCED ANALOGIC TECH INC·Filed 2007·Granted Oct 12, 2010·38 cites·11 claims
- 1197US7683453B2Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devicesADVANCED ANALOGIC TECH INC·Filed 2007·Granted Mar 23, 2010·32 cites·19 claims
- 1297US7648879B2High-voltage vertical transistor with a multi-gradient drain doping profilePOWER INTEGRATIONS INC·Filed 2008·Granted Jan 19, 2010·32 cites·16 claims
- 1397US7494875B2Gate etch process for a high-voltage FETPOWER INTEGRATIONS INC·Filed 2008·Granted Feb 24, 2009·53 cites·6 claims
- 1497US7489007B2High-voltage lateral DMOS deviceADVANCED ANALOGIC TECH INC·Filed 2007·Granted Feb 10, 2009·45 cites·5 claims
- 1597US7459366B2High-voltage vertical transistor with a multi-gradient drain doping profilePOWER INTEGRATIONS INC·Filed 2007·Granted Dec 2, 2008·53 cites·10 claims
- 1697US7381618B2Gate etch process for a high-voltage FETPOWER INTEGRATIONS INC·Filed 2006·Granted Jun 3, 2008·52 cites·26 claims
- 1797US6865093B2Electronic circuit control element with tap elementPOWER INTEGRATIONS INC·Filed 2003·Granted Mar 8, 2005·89 cites·37 claims
- 1897US6635544B2Method of fabricating a high-voltage transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2001·Granted Oct 21, 2003·96 cites·39 claims
- 1997US6555873B2High-voltage lateral transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2001·Granted Apr 29, 2003·128 cites·56 claims
- 2097US6509220B2Method of fabricating a high-voltage transistorPOWER INTEGRATIONS INC·Filed 2002·Granted Jan 21, 2003·154 cites·56 claims
- 2197US6501130B2High-voltage transistor with buried conduction layerPOWER INTEGRATIONS INC·Filed 2002·Granted Dec 31, 2002·96 cites·13 claims
- 2297US6468847B1Method of fabricating a high-voltage transistorPOWER INTEGRATIONS INC·Filed 2000·Granted Oct 22, 2002·128 cites·41 claims
- 2397US6168983B1Method of making a high-voltage transistor with multiple lateral conduction layersPOWER INTEGRATIONS INC·Filed 1999·Granted Jan 2, 2001·323 cites·45 claims
- 2496US7998817B2Method of fabricating a high-voltage transistor with an extended drain structurePOWER INTEGRATIONS INC·Filed 2009·Granted Aug 16, 2011·27 cites·8 claims
- 2596US7745291B2Method of fabricating a high-voltage transistor with an extended drain structurePOWER INTEGRATIONS INC·Filed 2007·Granted Jun 29, 2010·27 cites·2 claims
- 2696US7667268B2Isolated transistorADVANCED ANALOGIC TECH INC·Filed 2008·Granted Feb 23, 2010·26 cites·15 claims
- 2796US7576391B2High-voltage lateral trench MOSFETADVANCED ANALOGIC TECH INC·Filed 2007·Granted Aug 18, 2009·31 cites·20 claims
- 2896US7253042B2Method of fabricating a high-voltage transistor with an extended drain structurePOWER INTEGRATIONS INC·Filed 2004·Granted Aug 7, 2007·67 cites·12 claims
- 2996US6987299B2High-voltage lateral transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2004·Granted Jan 17, 2006·86 cites·28 claims
- 3096US6882005B2High-voltage vertical transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2003·Granted Apr 19, 2005·81 cites·25 claims
- 3196US6838346B2Method of fabricating a high-voltage transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2003·Granted Jan 4, 2005·71 cites·16 claims
- 3296US6828631B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2004·Granted Dec 7, 2004·75 cites·13 claims
- 3396US6787847B2High-voltage vertical transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2002·Granted Sep 7, 2004·82 cites·9 claims
- 3496US6750105B2Method of fabricating a high-voltage transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2002·Granted Jun 15, 2004·78 cites·24 claims
- 3596US6724041B2Method of making a high-voltage transistor with buried conduction regionsPOWER INTEGRATIONS INC·Filed 2002·Granted Apr 20, 2004·70 cites·20 claims
- 3696US6570219B1High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2000·Granted May 27, 2003·83 cites·58 claims
- 3796US6424007B1High-voltage transistor with buried conduction layerPOWER INTEGRATIONS INC·Filed 2001·Granted Jul 23, 2002·76 cites·22 claims
- 3895US7737526B2Isolated trench MOSFET in epi-less semiconductor sustrateADVANCED ANALOGIC TECH INC·Filed 2007·Granted Jun 15, 2010·38 cites·24 claims
- 3995US7696566B2Method and apparatus for controlling a circuit with a high voltage sense devicePOWER INTEGRATIONS INC·Filed 2009·Granted Apr 13, 2010·22 cites·7 claims
- 4095US6781198B2High-voltage vertical transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2002·Granted Aug 24, 2004·56 cites·13 claims
- 4195US6777749B2High-voltage transistor with multi-layer conduction regionPOWER INTEGRATIONS INC·Filed 2003·Granted Aug 17, 2004·58 cites·7 claims
- 4295US6734714B2Integrated circuit with closely coupled high voltage output and offline transistor pairPOWER INTEGRATIONS INC·Filed 2003·Granted May 11, 2004·82 cites·10 claims
- 4395US6667213B2Method of fabricating a high-voltage transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2002·Granted Dec 23, 2003·68 cites·17 claims
- 4495US6563171B2High-voltage transistor with buried conduction layerPOWER INTEGRATIONS INC·Filed 2002·Granted May 13, 2003·70 cites·8 claims
- 4595US6504209B2High-voltage transistor with buried conduction layerPOWER INTEGRATIONS INC·Filed 2002·Granted Jan 7, 2003·56 cites·7 claims
- 4694US7786533B2High-voltage vertical transistor with edge termination structurePOWER INTEGRATIONS INC·Filed 2005·Granted Aug 31, 2010·29 cites·19 claims
- 4794US7205824B2Method and apparatus for controlling a circuit with a high voltage sense devicePOWER INTEGRATIONS INC·Filed 2005·Granted Apr 17, 2007·18 cites·7 claims
- 4894US6818490B2Method of fabricating complementary high-voltage field-effect transistorsPOWER INTEGRATIONS INC·Filed 2003·Granted Nov 16, 2004·53 cites·8 claims
- 4994US6815293B2High-voltage lateral transistor with a multi-layered extended drain structurePOWER INTEGRATIONS INC·Filed 2002·Granted Nov 9, 2004·67 cites·45 claims
- 5094US6768171B2High-voltage transistor with JFET conduction channelsPOWER INTEGRATIONS INC·Filed 2002·Granted Jul 27, 2004·81 cites·40 claims
Showing the top 50 of 200 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →