Inventor · disambiguated record
Stephen A. St. Onge
Also filed as: ST ONGE STEPHEN · ST ONGE STEPHEN A · ST ONGE STEPHEN ARTHUR
32 granted patents·1 pending application·593 citations·filing 1997–2012
98Inventor score
Top patents by PatentIndex Score
33 records- 0195US6900519B2Diffused extrinsic base and method for fabricationIBM·Filed 2004·Granted May 31, 2005·95 cites·17 claims
- 0290US6452251B1Damascene metal capacitorIBM·Filed 2000·Granted Sep 17, 2002·61 cites·22 claims
- 0388US7253096B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2005·Granted Aug 7, 2007·11 cites·7 claims
- 0488US6600199B2Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunityIBM·Filed 2000·Granted Jul 29, 2003·51 cites·14 claims
- 0584US6812545B2Epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2003·Granted Nov 2, 2004·28 cites·7 claims
- 0682US8640077B1Capturing mutual coupling effects between an integrated circuit chip and chip packageGROVES ROBERT A·Filed 2012·Granted Jan 28, 2014·8 cites·20 claims
- 0778US8466501B2Asymmetric silicon-on-insulator (SOI) junction field effect transistor (JFET) and a method of forming the asymmetrical SOI JFETHERSHBERGER DOUGLAS B·Filed 2010·Granted Jun 18, 2013·8 cites·19 claims
- 0878US7002221B2Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming sameIBM·Filed 2003·Granted Feb 21, 2006·17 cites·17 claims
- 0977US6384468B1Capacitor and method for forming sameIBM·Filed 2000·Granted May 7, 2002·17 cites·9 claims
- 1076US6597050B1Method of contacting a silicide-based schottky diode and diode so formedIBM·Filed 2000·Granted Jul 22, 2003·19 cites·12 claims
- 1174US7550787B2Varied impurity profile region formation for varying breakdown voltage of devicesIBM·Filed 2005·Granted Jun 23, 2009·4 cites·6 claims
- 1274US6507063B2Poly-poly/MOS capacitor having a gate encapsulating first electrode layerIBM·Filed 2000·Granted Jan 14, 2003·16 cites·26 claims
- 1372US6617220B2Method for fabricating an epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2001·Granted Sep 9, 2003·15 cites·13 claims
- 1472US6258695B1Dislocation suppression by carbon incorporationIBM·Filed 1999·Granted Jul 10, 2001·50 cites·7 claims
- 1571US6440811B1Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration schemeIBM·Filed 2000·Granted Aug 27, 2002·15 cites·18 claims
- 1669US6121122AMethod of contacting a silicide-based schottky diodeIBM·Filed 1999·Granted Sep 19, 2000·24 cites·7 claims
- 1768US6476483B1Method and apparatus for cooling a silicon on insulator deviceIBM·Filed 1999·Granted Nov 5, 2002·35 cites·10 claims
- 1867US6096618AMethod of making a Schottky diode with sub-minimum guard ringIBM·Filed 1998·Granted Aug 1, 2000·26 cites·29 claims
- 1964US7317240B2Redundant interconnect high current bipolar device and method of forming the deviceIBM·Filed 2005·Granted Jan 8, 2008·2 cites·20 claims
- 2062US7709930B2Tuneable semiconductor device with discontinuous portions in the sub-collectorIBM·Filed 2004·Granted May 4, 2010·10 cites·8 claims
- 2158US6635548B2Capacitor and method for forming sameIBM·Filed 2001·Granted Oct 21, 2003·5 cites·11 claims
- 2256US7868423B2Optimized device isolationIBM·Filed 2008·Granted Jan 11, 2011·1 cites·19 claims
- 2355US6833299B2Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration schemeIBM·Filed 2002·Granted Dec 21, 2004·5 cites·12 claims
- 2455US6657280B1Redundant interconnect high current bipolar deviceIBM·Filed 2000·Granted Dec 2, 2003·5 cites·17 claims
- 2554US6869854B2Diffused extrinsic base and method for fabricationIBM·Filed 2002·Granted Mar 22, 2005·5 cites·29 claims
- 2652US8030167B2Varied impurity profile region formation for varying breakdown voltage of devicesIBM·Filed 2007·Granted Oct 4, 2011·0 cites·19 claims
- 2752US7701015B2Bipolar and CMOS integration with reduced contact heightIBM·Filed 2003·Granted Apr 20, 2010·5 cites·8 claims
- 2852US6998699B2Redundant interconnect high current bipolar device and method of forming the deviceIBM·Filed 2003·Granted Feb 14, 2006·4 cites·9 claims
- 2951US2009057815A1Forming channel stop for deep trench isolation prior to deep trench etchLANZEROTTI LOUIS D·Filed 2008·Application pending·0 cites
- 3050US6448124B1Method for epitaxial bipolar BiCMOSIBM·Filed 1999·Granted Sep 10, 2002·16 cites·25 claims
- 3150US6329690B1Method and apparatus to match semiconductor device performanceIBM·Filed 1999·Granted Dec 11, 2001·16 cites·19 claims
- 3250US5882977AMethod of forming a self-aligned, sub-minimum isolation ringIBM·Filed 1997·Granted Mar 16, 1999·16 cites·16 claims
- 3334US6420747B2MOSCAP design for improved reliabilityIBM·Filed 1999·Granted Jul 16, 2002·3 cites·15 claims
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