Inventor · disambiguated record
Kai-Lin Lee
Also filed as: LEE KAI-LIN
33 granted patents·13 pending applications·57 citations·filing 2015–2025
95Inventor score
Top patents by PatentIndex Score
46 records- 0197US11239327B2HEMT and method of adjusting electron density of 2DEGUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 1, 2022·18 cites·19 claims
- 0295US11749748B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 5, 2023·2 cites·10 claims
- 0395US9450094B1Semiconductor process and fin-shaped field effect transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 20, 2016·12 cites·18 claims
- 0494US11088271B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Aug 10, 2021·6 cites·10 claims
- 0590US11380777B2Method for forming a high-voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jul 5, 2022·2 cites·8 claims
- 0689US12396195B2High electron mobility transistor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 19, 2025·1 cites·7 claims
- 0786US10566244B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 18, 2020·3 cites·8 claims
- 0885US12107157B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 1, 2024·0 cites·5 claims
- 0984US10629728B1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 21, 2020·3 cites·32 claims
- 1084US2024421219A1High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1183US10103265B1Complementary metal oxide semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 1279US12132095B2Method of fabricating metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 29, 2024·0 cites·6 claims
- 1378US11332120B2Method of energy management and computer system for energy managementUNIV NAT TAIWAN NORMAL·Filed 2020·Granted May 17, 2022·2 cites·16 claims
- 1478US9640661B1FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 2, 2017·2 cites·12 claims
- 1578US2025344431A1Manufacturing method of high electron mobility transistor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1677US12396201B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Aug 19, 2025·0 cites·11 claims
- 1777US2024413199A1Method for forming air gap between gate dielectric layer and spacerUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1877US2024413200A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1976US12266723B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Apr 1, 2025·0 cites·11 claims
- 2076US2025248061A1Hemt and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2173US11652154B2Method of fabricating metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 16, 2023·0 cites·6 claims
- 2272US2025248059A1Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2372US2025212447A1Method of forming high electron mobility transistor (hemt) deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2471US12471304B2High electron mobility transistor (HEMT) device for increasing the Schottky diode current and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Nov 11, 2025·0 cites·10 claims
- 2570US12107121B2Method for forming air gap between gate dielectric layer and spacerUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 1, 2024·0 cites·5 claims
- 2668US12289900B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 29, 2025·0 cites·5 claims
- 2768US11610973B2High voltage transistor structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Mar 21, 2023·0 cites·10 claims
- 2868US10014406B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 3, 2018·1 cites·16 claims
- 2967US2025194130A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3066US11251279B2High voltage transistor structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 15, 2022·0 cites·9 claims
- 3166US11127838B2Method of fabricating metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 21, 2021·0 cites·6 claims
- 3266US2023253497A1High voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3366US2024047554A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3465US11715784B2Method for forming a high-voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 1, 2023·0 cites·10 claims
- 3565US2024021702A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3664US11527652B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 13, 2022·0 cites·5 claims
- 3763US11955541B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 9, 2024·0 cites·8 claims
- 3863US11011430B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted May 18, 2021·0 cites·9 claims
- 3960US10756209B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Aug 25, 2020·0 cites·10 claims
- 4059US11664450B2High voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 30, 2023·0 cites·12 claims
- 4159US10861974B2Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 8, 2020·0 cites·16 claims
- 4255US12176403B2High electron mobility transistor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 24, 2024·0 cites·19 claims
- 4353US10629734B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 21, 2020·0 cites·5 claims
- 4446US10229995B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 12, 2019·0 cites·5 claims
- 4534US2018166574A1Finfet with epitaxial layer having octagonal cross-sectionUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 4631US2018358453A1Tunneling field effect transistorUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →