Inventor · disambiguated record
Kyoko Okita
Also filed as: OKITA KYOKO
35 granted patents·32 pending applications·44 citations·filing 2007–2023
95Inventor score
Top patents by PatentIndex Score
67 records- 0191US8975643B2Silicon carbide single-crystal substrate and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 10, 2015·9 cites·6 claims
- 0290US8435866B2Method for manufacturing silicon carbide substrateNISHIGUCHI TARO·Filed 2010·Granted May 7, 2013·11 cites·14 claims
- 0382US9290860B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Mar 22, 2016·1 cites·9 claims
- 0481US11342418B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted May 24, 2022·3 cites·3 claims
- 0577US11034058B2Method for manufacturing silicon carbide substrate, method for manufacturing silicon carbide epitaxial substrate, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jun 15, 2021·2 cites·9 claims
- 0677US8487409B2Indium phosphide substrate manufacturing method, epitaxial wafer manufacturing method indium phosphide substrate, and epitaxial waferOKITA KYOKO·Filed 2010·Granted Jul 16, 2013·4 cites·4 claims
- 0776US11535953B2Silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Dec 27, 2022·1 cites·6 claims
- 0875US9966249B2Silicon carbide semiconductor substrate and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 8, 2018·3 cites·18 claims
- 0975US9896781B2Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing themSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 20, 2018·2 cites·11 claims
- 1073US7737043B2Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jun 15, 2010·5 cites·13 claims
- 1172US11781246B2Silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Oct 10, 2023·0 cites·7 claims
- 1270US11322349B2Silicon carbide substrate and silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted May 3, 2022·1 cites·4 claims
- 1368US2014138709A1Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 1467US9799735B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 24, 2017·0 cites·2 claims
- 1565US9947782B2Semiconductor device and method for manufacturing sameHARADA SHIN·Filed 2010·Granted Apr 17, 2018·1 cites·11 claims
- 1664US9691608B2Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 27, 2017·1 cites·16 claims
- 1760US10704163B2Silicon carbide substrate and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Jul 7, 2020·0 cites·4 claims
- 1860US2025146177A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 1959US2012091472A1Silicon carbide substrateSASAKI MAKOTO·Filed 2011·Application pending·0 cites
- 2058US12071708B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 27, 2024·0 cites·9 claims
- 2158US10741683B2Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 11, 2020·0 cites·12 claims
- 2258US10221501B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 5, 2019·0 cites·6 claims
- 2357US9844893B2Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Dec 19, 2017·0 cites·7 claims
- 2456US11913135B2Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Feb 27, 2024·0 cites·17 claims
- 2555US12104278B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Oct 1, 2024·0 cites·6 claims
- 2655US2014073228A1Silicon carbide single-crystal substrate and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 2754US2025203985A1Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 2853US10113249B2Silicon carbide substrate and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 30, 2018·0 cites·14 claims
- 2953US10030319B2Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jul 24, 2018·0 cites·4 claims
- 3053US9324814B2Silicon carbide single-crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Apr 26, 2016·0 cites·9 claims
- 3153US9318563B2Silicon carbide single-crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Apr 19, 2016·0 cites·6 claims
- 3252US11862684B2Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jan 2, 2024·0 cites·6 claims
- 3351US9346187B2Method of manufacturing silicon carbide substrateOKITA KYOKO·Filed 2012·Granted May 24, 2016·0 cites·8 claims
- 3450US2013109156A1Indium Phosphide Substrate Manufacturing Method and Epitaxial Wafer Manufacturing MethodSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 3550US2024234509A9Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 3650US2024145229A1Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 3749US12091772B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Sep 17, 2024·0 cites·2 claims
- 3848US11459670B2Silicon carbide epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Oct 4, 2022·0 cites·9 claims
- 3946US2022403550A1Silicon carbide substrate and method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Application pending·0 cites
- 4045US8629457B2Light-emitting deviceNISHIGUCHI TARO·Filed 2011·Granted Jan 14, 2014·0 cites·9 claims
- 4144US2014315373A1Method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 4242US10319821B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jun 11, 2019·0 cites·4 claims
- 4342US8969103B2Method for manufacturing silicon carbide substrate and method for manufacturing semiconductor deviceSASAKI MAKOTO·Filed 2011·Granted Mar 3, 2015·0 cites·5 claims
- 4442US2014030892A1Method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 4541US2007207630A1Surface treatment method of compound semiconductor substrate, fabrication method of compound semiconductor, compound semiconductor substrate, and semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Application pending·0 cites
- 4640US2013017683A1Method of manufacturing silicon carbide substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 4738US10872759B2Silicon carbide single crystal substrate and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Dec 22, 2020·0 cites·3 claims
- 4838US2011278593A1Method for manufacturing silicon carbide substrate, method for manufacturing semiconductor device, silicon carbide substrate, and semiconductor deviceNISHIGUCHI TARO·Filed 2011·Application pending·0 cites
- 4938US2011175107A1Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 5038US2012184113A1Method and device for manufacturing silicon carbide substrateINOUE HIROKI·Filed 2011·Application pending·0 cites
Showing the top 50 of 67 patent records by PatentIndex Score.
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