Inventor · disambiguated record
Tsubasa Honke
Also filed as: HONKE TSUBASA
19 granted patents·11 pending applications·13 citations·filing 2011–2023
89Inventor score
Top patents by PatentIndex Score
30 records- 0182US9290860B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Mar 22, 2016·1 cites·9 claims
- 0281US11342418B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted May 24, 2022·3 cites·3 claims
- 0375US9896781B2Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing themSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Feb 20, 2018·2 cites·11 claims
- 0470US11322349B2Silicon carbide substrate and silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted May 3, 2022·1 cites·4 claims
- 0569US8624266B2Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor deviceHARADA SHIN·Filed 2011·Granted Jan 7, 2014·2 cites·17 claims
- 0668US10427324B2Silicon carbide ingot and method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 1, 2019·1 cites·9 claims
- 0767US9799735B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 24, 2017·0 cites·2 claims
- 0866US8859387B2Method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Oct 14, 2014·3 cites·6 claims
- 0960US2025146177A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2023·Application pending·0 cites
- 1058US12071708B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 27, 2024·0 cites·9 claims
- 1158US10221501B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 5, 2019·0 cites·6 claims
- 1256US11913135B2Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Feb 27, 2024·0 cites·17 claims
- 1355US12104278B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Oct 1, 2024·0 cites·6 claims
- 1453US10030319B2Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jul 24, 2018·0 cites·4 claims
- 1552US11862684B2Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jan 2, 2024·0 cites·6 claims
- 1650US2024234509A9Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 1750US2024145229A1Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Application pending·0 cites
- 1849US12091772B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Sep 17, 2024·0 cites·2 claims
- 1948US11459670B2Silicon carbide epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Oct 4, 2022·0 cites·9 claims
- 2046US2022403550A1Silicon carbide substrate and method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Application pending·0 cites
- 2145US2022170179A1Silicon carbide substrate and method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Application pending·0 cites
- 2242US2024274434A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 2342US2014030892A1Method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 2442US2014030874A1Method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 2540US2013017683A1Method of manufacturing silicon carbide substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 2640US2024363696A1Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Application pending·0 cites
- 2739US10526699B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Jan 7, 2020·0 cites·18 claims
- 2838US10872759B2Silicon carbide single crystal substrate and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Dec 22, 2020·0 cites·3 claims
- 2937US9978651B2Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted May 22, 2018·0 cites·7 claims
- 3032US2018005816A1Semiconductor laminateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
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