Inventor · disambiguated record
Chun-Yuan Chou
Also filed as: CHOU CHUN-YUAN
16 granted patents·5 pending applications·77 citations·filing 2004–2024
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9KUO PO-CHENG3HON YOUNG SEMICONDUCTOR CORP2TAIWAN SEMICONDUCTOR MFG2HON HAI PREC IND CO LTD1
Top patents by PatentIndex Score
21 records- 0198US9935173B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·37 cites·20 claims
- 0290US11171134B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 0387US9761683B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·5 cites·21 claims
- 0487US8847333B2Techniques providing metal gate devices with multiple barrier layersYu xiong-fei·Filed 2011·Granted Sep 30, 2014·9 cites·20 claims
- 0586US9831243B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
- 0681US9105624B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·3 cites·20 claims
- 0780US7838135B2Heat assisted magnetic recording medium and method for fabricating the sameKUO PO-CHENG·Filed 2006·Granted Nov 23, 2010·6 cites·13 claims
- 0870US7719863B2Active start judgment circuitSHUTTLE INC·Filed 2008·Granted May 18, 2010·11 cites·8 claims
- 0965US10522544B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 1062US12241787B2Microbolometer and method of manufacturing the sameHON HAI PREC IND CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·17 claims
- 1161US10312236B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 1258US10170417B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
- 1356US9449828B2Method of forming metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·0 cites·20 claims
- 1455US9824969B1Semiconductor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
- 1555US2009246362A1Heat assisted magnetic recording medium and method for fabricating the sameKUO PO-CHENG·Filed 2009·Application pending·0 cites
- 1655US2025293047A1Semiconductor device and method of repairing waferHON YOUNG SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 1754US9196691B2Metal gate electrode of a field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·0 cites·20 claims
- 1848US2025293044A1Semiconductor device and manufacturing method thereofHON YOUNG SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
- 1947US8546885B2Metal gate electrode of a field effect transistorHOU CHENG-HAO·Filed 2011·Granted Oct 1, 2013·0 cites·20 claims
- 2038US2005016836A1Single layer CoTbAg thin films for heat assisted magnetic recordingFiled 2004·Application pending·0 cites
- 2134US2006021871A1Method for fabricating L10 phase alloy filmKUO PO-CHENG·Filed 2004·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →