Inventor · disambiguated record
Fabrice Letertre
Also filed as: LETERTRE FABRICE · LETERTRE FABRICE M
83 granted patents·14 pending applications·1,215 citations·filing 2001–2024
99Inventor score
Files withSOITEC SILICON ON INSULATOR60LETERTRE FABRICE15COMMISSARIAT ENERGIE ATOMIQUE7BETHOUX JEAN-MARC2RAYSSAC OLIVIER2
Top patents by PatentIndex Score
97 records- 0198US6867067B2Methods for fabricating final substratesSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 15, 2005·172 cites·39 claims
- 0298US6794276B2Methods for fabricating a substrateSOITEC SILICON ON INSULATOR·Filed 2003·Granted Sep 21, 2004·175 cites·25 claims
- 0395US6858107B2Method of fabricating substrates, in particular for optics, electronics or optoelectronicsSOITEC SILICON ON INSULATOR·Filed 2003·Granted Feb 22, 2005·55 cites·23 claims
- 0494US7741678B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Jun 22, 2010·14 cites·20 claims
- 0593US7839001B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2009·Granted Nov 23, 2010·15 cites·12 claims
- 0693US7465991B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2006·Granted Dec 16, 2008·14 cites·19 claims
- 0793US7232739B2Multifunctional metallic bondingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 19, 2007·24 cites·23 claims
- 0892US8114754B2Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methodsLETERTRE FABRICE·Filed 2010·Granted Feb 14, 2012·11 cites·16 claims
- 0992US7601217B2Method of fabricating an epitaxially grown layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 13, 2009·23 cites·20 claims
- 1091US7981767B2Methods for relaxation and transfer of strained layers and structures fabricated therebySOITEC SILICON ON INSULATOR·Filed 2008·Granted Jul 19, 2011·14 cites·19 claims
- 1191US7655537B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Feb 2, 2010·10 cites·20 claims
- 1291US6974759B2Method for making a stacked comprising a thin film adhering to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Dec 13, 2005·46 cites·26 claims
- 1391US6815309B2Support-integrated donor wafers for repeated thin donor layer separationSOITEC SILICON ON INSULATOR·Filed 2002·Granted Nov 9, 2004·57 cites·24 claims
- 1490US7422957B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2006·Granted Sep 9, 2008·9 cites·21 claims
- 1590US7288430B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 30, 2007·15 cites·13 claims
- 1689US8083115B2Substrate cutting device and methodRAYSSAC OLIVIER·Filed 2007·Granted Dec 27, 2011·13 cites·17 claims
- 1789US7939428B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2010·Granted May 10, 2011·7 cites·20 claims
- 1889US7902045B2Process for fabricating a structure for epitaxy without an exclusion zoneSOITEC SILICON ON INSULATOR·Filed 2008·Granted Mar 8, 2011·14 cites·16 claims
- 1989US7622330B2Semiconductor substrates having useful and transfer layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Nov 24, 2009·8 cites·14 claims
- 2089US7615468B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2007·Granted Nov 10, 2009·12 cites·25 claims
- 2189US7262113B2Methods for transferring a useful layer of silicon carbide to a receiving substrateSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 28, 2007·12 cites·27 claims
- 2289US7229898B2Methods for fabricating a germanium on insulator waferSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 12, 2007·19 cites·20 claims
- 2388US7422958B2Method of fabricating a mixed substrateSOITEC SILICON ON INSULATOR·Filed 2007·Granted Sep 9, 2008·20 cites·17 claims
- 2487US7863650B2Multilayer structure and fabrication thereofSOITEC SILICON ON INSULATOR·Filed 2009·Granted Jan 4, 2011·11 cites·7 claims
- 2587US7646038B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2007·Granted Jan 12, 2010·11 cites·22 claims
- 2687US7235462B2Methods for fabricating a substrateSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jun 26, 2007·36 cites·22 claims
- 2787US7008859B2Wafer and method of producing a substrate by transfer of a layer that includes foreign speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Mar 7, 2006·33 cites·19 claims
- 2887US6964914B2Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor materialSOITEC SILICON ON INSULATOR·Filed 2003·Granted Nov 15, 2005·44 cites·23 claims
- 2987US6908828B2Support-integrated donor wafers for repeated thin donor layer separationSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jun 21, 2005·42 cites·21 claims
- 3086US8679946B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 25, 2014·5 cites·28 claims
- 3185US7071029B2Methods for fabricating final substratesSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jul 4, 2006·18 cites·19 claims
- 3284US8154022B2Process for fabricating a structure for epitaxy without an exclusion zoneARENA CHANTAL·Filed 2010·Granted Apr 10, 2012·6 cites·12 claims
- 3384US7888235B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2007·Granted Feb 15, 2011·7 cites·22 claims
- 3484US7407869B2Method for manufacturing a free-standing substrate made of monocrystalline semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2005·Granted Aug 5, 2008·12 cites·22 claims
- 3584US7182234B2Substrate cutting device and methodSOITEC SILICON ON INSULATOR·Filed 2004·Granted Feb 27, 2007·23 cites·15 claims
- 3683US7537949B2Optoelectronic substrate and methods of making sameSOITEC SILICON ON INSULATOR·Filed 2005·Granted May 26, 2009·9 cites·19 claims
- 3783US7404870B2Methods for forming an assembly for transfer of a useful layerSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jul 29, 2008·6 cites·18 claims
- 3883US7022586B2Method for recycling a substrateSOITEC SILICON ON INSULATOR·Filed 2003·Granted Apr 4, 2006·34 cites·29 claims
- 3982US7611974B2Multilayer structure and fabrication thereofSOITEC SILICON ON INSULATOR·Filed 2007·Granted Nov 3, 2009·8 cites·13 claims
- 4081US2025022747A1Pseudo-substrate with improved efficiency of usage of single crystal materialSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 4180US8507361B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialLETERTRE FABRICE·Filed 2011·Granted Aug 13, 2013·4 cites·23 claims
- 4280US6946317B2Method of fabricating heteroepitaxial microstructuresSOITEC SILICON ON INSULATOR·Filed 2003·Granted Sep 20, 2005·21 cites·14 claims
- 4379US8481409B2Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrateMORICEAU HUBERT·Filed 2005·Granted Jul 9, 2013·5 cites·15 claims
- 4479US7122095B2Methods for forming an assembly for transfer of a useful layerSOITEC SILICON ON INSULATOR·Filed 2004·Granted Oct 17, 2006·16 cites·28 claims
- 4576US8759881B2Heterostructure for electronic power components, optoelectronic or photovoltaic componentsBETHOUX JEAN-MARC·Filed 2010·Granted Jun 24, 2014·5 cites·19 claims
- 4675US8093687B2Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transferLETERTRE FABRICE·Filed 2008·Granted Jan 10, 2012·3 cites·21 claims
- 4775US8048693B2Methods and structures for relaxation of strained layersSOITEC SILICON ON INSULATOR·Filed 2008·Granted Nov 1, 2011·4 cites·16 claims
- 4875US7452785B2Method of fabrication of highly heat dissipative substratesSOITEC SILICON ON INSULATOR·Filed 2007·Granted Nov 18, 2008·6 cites·18 claims
- 4975US6974760B2Methods for transferring a useful layer of silicon carbide to a receiving substrateSOITEC SILICON ON INSULATOR·Filed 2004·Granted Dec 13, 2005·14 cites·20 claims
- 5073US8951887B2Process for fabricating a semiconductor structure employing a temporary bondLETERTRE FABRICE·Filed 2012·Granted Feb 10, 2015·3 cites·16 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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