Inventor · disambiguated record
Frank Pfirsch
Also filed as: PFIRSCH FRANK · PFIRSCH FRANK DIETER
145 granted patents·27 pending applications·1,407 citations·filing 1991–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AG91INFINEON TECHNOLOGIES AUSTRIA32INFINEON TECHNOLOGIES AUSTRIA AG11PFIRSCH FRANK10SIEMENS AG6
Top patents by PatentIndex Score
172 records- 0198US7538412B2Semiconductor device with a field stop zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 26, 2009·144 cites·14 claims
- 0297US8643085B2High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structurePFIRSCH FRANK·Filed 2005·Granted Feb 4, 2014·53 cites·26 claims
- 0397US6201279B1Semiconductor component having a small forward voltage and high blocking abilityINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 13, 2001·206 cites·16 claims
- 0496US9373700B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Jun 21, 2016·9 cites·20 claims
- 0596US8384151B2Semiconductor device and a reverse conducting IGBTINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Feb 26, 2013·26 cites·27 claims
- 0695US6465869B2Compensation component and process for producing the compensation componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 15, 2002·99 cites·11 claims
- 0793US7655975B2Power trench transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 2, 2010·25 cites·18 claims
- 0893US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0992US6803627B2Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zoneINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 12, 2004·59 cites·18 claims
- 1091US7893486B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Feb 22, 2011·12 cites·7 claims
- 1191US7436023B2High blocking semiconductor component comprising a drift sectionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 14, 2008·20 cites·49 claims
- 1291US6720616B2Trench MOS transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 13, 2004·75 cites·9 claims
- 1390US9054035B2Increasing the doping efficiency during proton irradiationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 9, 2015·8 cites·7 claims
- 1490US8344415B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 1, 2013·12 cites·15 claims
- 1590US8334564B2Field plate trench transistor and method for producing itHIRLER FRANZ·Filed 2011·Granted Dec 18, 2012·8 cites·7 claims
- 1689US9159819B2Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Oct 13, 2015·9 cites·20 claims
- 1788US10134835B2Power semiconductor device having fully depleted channel regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 20, 2018·5 cites·22 claims
- 1888US9012311B2Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor componentPFIRSCH FRANK·Filed 2008·Granted Apr 21, 2015·9 cites·15 claims
- 1988US7989888B2Semiconductor device with a field stop zone and process of producing the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Aug 2, 2011·13 cites·15 claims
- 2087US7989885B2Semiconductor device having means for diverting short circuit current arranged in trench and method for producing sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 2, 2011·12 cites·22 claims
- 2187US7696600B2IGBT device and related device having robustness under extreme conditionsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Apr 13, 2010·13 cites·6 claims
- 2286US9337270B2Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 10, 2016·8 cites·22 claims
- 2386US7791138B2Semiconductor component and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 7, 2010·11 cites·14 claims
- 2486US7586161B2Edge structure with voltage breakdown in the linear regionINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 8, 2009·13 cites·18 claims
- 2586US6320205B1Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diodeINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 20, 2001·38 cites·18 claims
- 2685US8461648B2Semiconductor component with a drift region and a drift control regionPFIRSCH FRANK·Filed 2006·Granted Jun 11, 2013·12 cites·34 claims
- 2785US6815769B2Power semiconductor component, IGBT and field-effect transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 9, 2004·35 cites·28 claims
- 2884US10439025B2Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Oct 8, 2019·2 cites·20 claims
- 2984US9166027B2IGBT with reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 20, 2015·6 cites·27 claims
- 3084US8247874B2Depletion MOS transistor and charging arrangementHIRLER FRANZ·Filed 2010·Granted Aug 21, 2012·7 cites·24 claims
- 3184US7554137B2Power semiconductor component with charge compensation structure and method for the fabrication thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·8 cites·29 claims
- 3284US6541818B2Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body regionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 1, 2003·35 cites·14 claims
- 3383US9917181B2Bipolar transistor with superjunction structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·3 cites·25 claims
- 3483US8264033B2Semiconductor device having a floating semiconductor zonePFIRSCH FRANK·Filed 2009·Granted Sep 11, 2012·8 cites·15 claims
- 3582US9209109B2IGBT with emitter electrode electrically connected with an impurity zoneINFINEON TECHNOLOIGES AG·Filed 2013·Granted Dec 8, 2015·7 cites·23 claims
- 3682US8674727B2Circuit and method for driving a transistor component based on a load conditionMAUDER ANTON·Filed 2010·Granted Mar 18, 2014·6 cites·39 claims
- 3782US7880200B2Semiconductor device including a free wheeling diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Feb 1, 2011·10 cites·19 claims
- 3882US7541260B2Trench diffusion isolation in semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jun 2, 2009·9 cites·12 claims
- 3982US2025366167A1RC IGBT and Method of Producing an RC IGBTINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 4080US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 4180US9337185B2Semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 10, 2016·5 cites·16 claims
- 4280US8866215B2Semiconductor component having a transition regionPFIRSCH FRANK·Filed 2007·Granted Oct 21, 2014·7 cites·24 claims
- 4380US7947569B2Method for producing a semiconductor including a foreign material layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 24, 2011·8 cites·22 claims
- 4479US8643086B2Semiconductor component with high breakthrough tension and low forward resistancePFIRSCH FRANK DIETER·Filed 2012·Granted Feb 4, 2014·5 cites·45 claims
- 4579US8110868B2Power semiconductor component with a low on-state resistancePFIRSCH FRANK DIETER·Filed 2006·Granted Feb 7, 2012·8 cites·13 claims
- 4678US9190511B2Semiconductor component with a drift region and a drift control regionINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 17, 2015·4 cites·34 claims
- 4778US7173306B2Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zoneINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 6, 2007·22 cites·21 claims
- 4877US6531748B2Semiconductor power component with a reduced parasitic bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 11, 2003·21 cites·6 claims
- 4976US9691887B2Semiconductor device with variable resistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
- 5076US9373710B2Insulated gate bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 21, 2016·4 cites·17 claims
Showing the top 50 of 172 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →