Inventor · disambiguated record
Ker Hsiao Huo
Also filed as: HUO KER-HSIAO
42 granted patents·3 pending applications·122 citations·filing 2007–2022
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30TAIWAN SEMICONDUCTOR MFG8SU RU-YI3HUO KER HSIAO2EPISIL TECHNOLOGIES INC1
Top patents by PatentIndex Score
45 records- 0192US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 0292US8624322B1High voltage device with a parallel resistorSU RU-YI·Filed 2012·Granted Jan 7, 2014·15 cites·20 claims
- 0391US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 0491US9831340B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·6 cites·16 claims
- 0591US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 0688US8629513B2HV interconnection solution using floating conductorsSU RU-YI·Filed 2011·Granted Jan 14, 2014·10 cites·14 claims
- 0788US7514754B2Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problemEPISIL TECHNOLOGIES INC·Filed 2007·Granted Apr 7, 2009·20 cites·12 claims
- 0887US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 0987US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 1086US8575694B2Insulated gate bipolar transistor structure having low substrate leakageHUO KER HSIAO·Filed 2012·Granted Nov 5, 2013·6 cites·19 claims
- 1185US11410991B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·1 cites·20 claims
- 1285US8969913B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 3, 2015·5 cites·21 claims
- 1383US8803232B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesHUO KER HSIAO·Filed 2011·Granted Aug 12, 2014·6 cites·18 claims
- 1481US8680616B2High side gate driver deviceSU RU-YI·Filed 2010·Granted Mar 25, 2014·5 cites·7 claims
- 1577US12211935B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 1676US10923467B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·1 cites·20 claims
- 1776US10867990B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 1876US9853149B1Floating grid and crown-shaping poly for improving ILD CMP dishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·2 cites·20 claims
- 1976US9257533B2Method of making an insulated gate bipolar transistor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 2073US11004844B2Recessed STI as the gate dielectric of HV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 11, 2021·1 cites·20 claims
- 2173US9035379B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 19, 2015·2 cites·20 claims
- 2271US11508845B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 2367US11069805B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 2467US10930776B2High voltage LDMOS transistor and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 23, 2021·0 cites·20 claims
- 2567US10916542B2Recessed STI as the gate dielectric of HV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 9, 2021·1 cites·20 claims
- 2663US2021280577A1Recessed STI as the Gate Dielectric of HV DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 2760US10483259B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
- 2858US10847652B2Semiconductor structure and associated fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 24, 2020·0 cites·20 claims
- 2958US10790387B2High voltage LDMOS transistor and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·0 cites·20 claims
- 3058US9941268B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·0 cites·20 claims
- 3158US9793385B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 3258US9214547B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·0 cites·20 claims
- 3356US10510882B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 3456US9379188B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 28, 2016·0 cites·19 claims
- 3555US10121890B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 6, 2018·0 cites·20 claims
- 3655US9911845B2High voltage LDMOS transistor and methods for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·0 cites·20 claims
- 3755US9190476B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 17, 2015·0 cites·20 claims
- 3853US9391195B2High side gate driver deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 12, 2016·0 cites·20 claims
- 3952US11862675B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 4052US9257979B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·0 cites·20 claims
- 4150US9660108B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 4243US10164037B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 4342US10325964B2OLED merged spacer deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 18, 2019·0 cites·20 claims
- 4434US2011241114A1High voltage mos transistorTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
- 4533US2016260704A1High Voltage Device with a Parallel ResistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →