Inventor · disambiguated record
Imran Khan
Also filed as: KHAN IMRAN · KHAN IMRAN M · KHAN IMRAN MAHMOOD
45 granted patents·4 pending applications·273 citations·filing 1999–2018
98Inventor score
Files withTEXAS INSTRUMENTS INC29SPANSION LLC4ADVANCED MICRO DEVICES INC3MITCHELL ALLAN T3TEXAS INSTRUMENTS DEUTSCHLAND2
Top patents by PatentIndex Score
49 records- 0197US9064903B2Analog floating-gate memory manufacturing process implementing n-channel and p-channel MOS transistorsTEXAS INSTRUMENTS INC·Filed 2014·Granted Jun 23, 2015·28 cites·5 claims
- 0292US10276648B1Plasma treatment for thin film resistors on integrated circuitsTEXAS INSTRUMENTS INC·Filed 2017·Granted Apr 30, 2019·7 cites·20 claims
- 0391US9455312B2Multiple depth vias in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2015·Granted Sep 27, 2016·6 cites·16 claims
- 0489US8178915B1Unitary floating-gate electrode with both N-type and P-type gatesMITCHELL ALLAN T·Filed 2011·Granted May 15, 2012·10 cites·12 claims
- 0585US6432791B1Integrated circuit capacitor and methodTEXAS INSTRUMENTS INC·Filed 2000·Granted Aug 13, 2002·39 cites·2 claims
- 0684US9608109B1N-channel demos deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Mar 28, 2017·5 cites·18 claims
- 0783US8754501B2Integration of precision MIM capacitor and precision thin film resistorTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 17, 2014·6 cites·14 claims
- 0879US8779550B2Analog floating-gate capacitor with improved data retention in a silicided integrated circuitLIU KAIPING·Filed 2012·Granted Jul 15, 2014·6 cites·8 claims
- 0978US6873021B1MOS transistors having higher drain current without reduced breakdown voltageTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 29, 2005·26 cites·20 claims
- 1077US8981445B2Analog floating-gate memory with N-channel and P-channel MOS transistorsMITCHELL ALLAN T·Filed 2012·Granted Mar 17, 2015·3 cites·8 claims
- 1177US6861303B2JFET structure for integrated circuit and fabrication methodTEXAS INSTRUMENTS INC·Filed 2003·Granted Mar 1, 2005·21 cites·25 claims
- 1277US6352887B1Merged bipolar and CMOS circuit and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 5, 2002·41 cites·5 claims
- 1374US9202912B2Low cost demos transistor with improved CHC immunityTEXAS INSTRUMENTS INC·Filed 2014·Granted Dec 1, 2015·2 cites·17 claims
- 1473US7268394B2JFET structure for integrated circuit and fabrication methodTEXAS INSTRUMENTS INC·Filed 2005·Granted Sep 11, 2007·5 cites·16 claims
- 1572US7279738B2Semiconductor device with an analog capacitorTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 9, 2007·5 cites·9 claims
- 1671US7670888B2Low noise JFETTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 2, 2010·4 cites·19 claims
- 1769US8729616B2Low leakage capacitor for analog floating-gate integrated circuitsTEXAS INSTRUMENTS INC·Filed 2012·Granted May 20, 2014·2 cites·7 claims
- 1868US7084458B1Semiconductor device having triple LDD structure and lower gate resistance formed with a single implant processADVANCED MICRO DEVICES INC·Filed 2005·Granted Aug 1, 2006·4 cites·4 claims
- 1966US8980723B2Multiple depth vias in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2013·Granted Mar 17, 2015·1 cites·7 claims
- 2066US8912014B1Controlling the latchup effectLIN CHUAN·Filed 2006·Granted Dec 16, 2014·2 cites·4 claims
- 2166US6751146B1System and method for charge restoration in a non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 15, 2004·16 cites·20 claims
- 2259US8373215B2Zero temperature coefficient capacitorTEXAS INSTRUMENTS INC·Filed 2011·Granted Feb 12, 2013·1 cites·20 claims
- 2359US7776696B2Method to obtain multiple gate thicknesses using in-situ gate etch mask approachSPANSION LLC·Filed 2007·Granted Aug 17, 2010·2 cites·20 claims
- 2459US6930005B2Low cost fabrication method for high voltage, high drain current MOS transistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 16, 2005·9 cites·25 claims
- 2556US9759764B1Controlling the latchup effectCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Sep 12, 2017·0 cites·20 claims
- 2656US8558296B2Low leakage capacitor for analog floating-gate integrated circuitsKHAN IMRAN MAHMOOD·Filed 2011·Granted Oct 15, 2013·1 cites·13 claims
- 2756US6706635B2Innovative method to build a high precision analog capacitor with low voltage coefficient and hysteresisTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 16, 2004·6 cites·33 claims
- 2855US10505037B2P-channel DEMOS deviceTEXAS INSTRUMENTS INC·Filed 2018·Granted Dec 10, 2019·0 cites·18 claims
- 2953US9230887B2Multiple depth vias in an integrated circuitTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 5, 2016·0 cites·3 claims
- 3052US8633083B1Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implantSPANSION LLC·Filed 2013·Granted Jan 21, 2014·0 cites·9 claims
- 3151US9577094B2Low cost demos transistor with improved CHC immunityTEXAS INSTRUMENTS INC·Filed 2015·Granted Feb 21, 2017·0 cites·14 claims
- 3251US8975135B2Analog floating-gate capacitor with improved data retention in a silicided integrated circuitTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 10, 2015·0 cites·13 claims
- 3351US6939770B1Method of fabricating semiconductor device having triple LDD structure and lower gate resistance formed with a single implant processADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 6, 2005·5 cites·18 claims
- 3448US9947783B2P-channel DEMOS deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 17, 2018·0 cites·8 claims
- 3547US8716083B2Unitary floating-gate electrode with both N-type and P-type gatesMITCHELL ALLAN T·Filed 2012·Granted May 6, 2014·0 cites·7 claims
- 3647US6885054B1Threshold voltage stabilizer, method of manufacturing and integrated circuit employing the sameTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 26, 2005·2 cites·25 claims
- 3744US6979615B2System and method for forming a semiconductor with an analog capacitor using fewer structure stepsTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 27, 2005·2 cites·10 claims
- 3843US8040738B2Method and apparatus for performing semiconductor memory operationsSPANSION LLC·Filed 2008·Granted Oct 18, 2011·1 cites·20 claims
- 3942US8933510B2DEMOS formed with a through gate implantTEXAS INSTRUMENTS INC·Filed 2013·Granted Jan 13, 2015·0 cites·20 claims
- 4042US8530977B1Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implantKHAN IMRAN·Filed 2003·Granted Sep 10, 2013·1 cites·9 claims
- 4142US7939440B2Junction leakage suppression in memory devicesSPANSION LLC·Filed 2005·Granted May 10, 2011·0 cites·18 claims
- 4240US8110857B2Low noise JFETHAO PINGHAI·Filed 2010·Granted Feb 7, 2012·0 cites·19 claims
- 4339US6734491B1EEPROM with reduced manufacturing complexityTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2002·Granted May 11, 2004·2 cites·5 claims
- 4438US2008277761A1On-chip isolation capacitors, circuits therefrom, and methods for forming the sameTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 4537US6958269B2Memory device with reduced cell sizeTEXAS INSTRUMENTS INC·Filed 2002·Granted Oct 25, 2005·2 cites·18 claims
- 4637US2007218663A1Semiconductor device incorporating fluorine into gate dielectricTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 4736US8536011B2Junction leakage suppression in memory devicesAHMED SHIBLY S·Filed 2011·Granted Sep 17, 2013·0 cites·20 claims
- 4832US2004175891A1EEPROM with reduced manufacturing complexityTEXAS INSTRUMENTS DEUTSCHLAND·Filed 2004·Application pending·0 cites
- 4932US2002079530A1Electronic circuit with electrical hole isolatorFiled 2001·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →