Inventor · disambiguated record
Eun-Shil Park
Also filed as: PARK EUN S · PARK EUN SHIL
24 granted patents·5 pending applications·70 citations·filing 2005–2015
94Inventor score
Top patents by PatentIndex Score
29 records- 0187US8309416B2Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereofPARK EUN-SHIL·Filed 2009·Granted Nov 13, 2012·16 cites·19 claims
- 0284US8860127B2Vertical channel transistor with self-aligned gate electrode and method for fabricating the sameCHO HEUNG-JAE·Filed 2012·Granted Oct 14, 2014·6 cites·6 claims
- 0383US9245976B2Vertical channel transistor with self-aligned gate electrode and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 26, 2016·5 cites·28 claims
- 0483US7238574B1Flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 3, 2007·9 cites·12 claims
- 0582US8912604B2Semiconductor device having buried bit lines and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 16, 2014·5 cites·12 claims
- 0677US8936982B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Jan 20, 2015·3 cites·5 claims
- 0776US8513103B2Method for manufacturing vertical transistor having buried junctionPARK EUN SHIL·Filed 2011·Granted Aug 20, 2013·4 cites·29 claims
- 0873US9236386B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Jan 12, 2016·2 cites·7 claims
- 0973US8481431B2Method for opening one-side contact region of vertical transistor and method for fabricating one-side junction region using the sameROUH KYONG BONG·Filed 2011·Granted Jul 9, 2013·4 cites·21 claims
- 1073US8129244B2Method for fabricating semiconductor deviceEUN YONG-SEOK·Filed 2010·Granted Mar 6, 2012·4 cites·15 claims
- 1170US9443858B2Semiconductor device having buried bit lines and method for fabricating the sameSK HYNIX INC·Filed 2014·Granted Sep 13, 2016·2 cites·16 claims
- 1265US9484335B2Semiconductor device with buried bitline and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Nov 1, 2016·2 cites·9 claims
- 1364US7608885B2Flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 27, 2009·2 cites·6 claims
- 1463US9287169B2Method for fabricating a semiconductor device having buried bit linesSK HYNIX INC·Filed 2014·Granted Mar 15, 2016·1 cites·13 claims
- 1563US8836001B2Semiconductor device having buried bit line, and method for fabricating the samePARK EUN-SHIL·Filed 2012·Granted Sep 16, 2014·2 cites·11 claims
- 1662US8907409B2Semiconductor device having buried bit lines and method for fabricating the sameSK HYNIX INC·Filed 2013·Granted Dec 9, 2014·1 cites·5 claims
- 1762US7795123B2Method of forming gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 14, 2010·1 cites·12 claims
- 1862US7648923B2Method of fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jan 19, 2010·1 cites·15 claims
- 1956US8912064B2Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the sameSK HYNIX INC·Filed 2013·Granted Dec 16, 2014·0 cites·9 claims
- 2056US8859370B2Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the sameSK HYNIX INC·Filed 2013·Granted Oct 14, 2014·0 cites·5 claims
- 2155US9379117B2Semiconductor device with buried bit line and method for fabricating the sameSK HYNIX INC·Filed 2015·Granted Jun 28, 2016·0 cites·7 claims
- 2248US8481390B2Method for forming impurity region of vertical transistor and method for fabricating vertical transistor using the sameEUN YONG SEOK·Filed 2011·Granted Jul 9, 2013·0 cites·8 claims
- 2346US7759236B2Flash memory device and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 20, 2010·0 cites·18 claims
- 2446US7592222B2Method of fabricating flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Sep 22, 2009·0 cites·14 claims
- 2546US2009068850A1Method of Fabricating Flash Memory DeviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 2646US2009124096A1Method of fabricating flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 2742US2012217619A1Semiconductor device with triangle prism pillar and method for manufacturing the sameKIM MIN-SOO·Filed 2011·Application pending·0 cites
- 2837US2006205159A1Method of forming gate flash memory deviceHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 2937US2006240678A1Method of forming a LP-CVD oxide film without oxidizing an underlying metal filmHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
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