Inventor
PARK BYUNG-LYUL
KR104 patents
⚠️ This page may combine multiple inventors who share the name “PARK BYUNG-LYUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS9461007B2Oct 4, 2016
Wafer-to-wafer bonding structure
SAMSUNG ELECTRONICS CO LTD239 citations99
US8354308B2Jan 15, 2013
Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate
SAMSUNG ELECTRONICS CO LTD230 citations98
US6087257AJul 11, 2000
Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer
SAMSUNG ELECTRONICS CO LTD99 citations97
US5723384AMar 3, 1998
Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film
SAMSUNG ELECTRONICS CO LTD91 citations95
US9865581B2Jan 9, 2018
Method of fabricating multi-substrate semiconductor devices
SAMSUNG ELECTRONICS CO LTD25 citations93
US9520361B2Dec 13, 2016
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD28 citations93
US8957526B2Feb 17, 2015
Semiconductor chips having through silicon vias and related fabrication methods and semiconductor packages
SAMSUNG ELECTRONICS CO LTD19 citations92
US5970309AOct 19, 1999
Method of manufacturing a capacitor and a capacitor electrode in semiconductor device
SAMSUNG ELECTRONICS CO LTD36 citations92
US10325882B2Jun 18, 2019
Method of manufacturing semiconductor package
SAMSUNG ELECTRONICS CO LTD38 citations91
US6596581B2Jul 22, 2003
Method for manufacturing a semiconductor device having a metal-insulator-metal capacitor and a damascene wiring layer structure
SAMSUNG ELECTRONICS CO LTD26 citations89
US7737038B2Jun 15, 2010
Method of fabricating semiconductor device including planarizing conductive layer using parameters of pattern density and depth of trenches
SAMSUNG ELECTRONICS CO LTD48 citations88
US10165349B2Dec 25, 2018
Audio output device and electronic device connected therewith
SAMSUNG ELECTRONICS CO LTD9 citations84
US9935037B2Apr 3, 2018
Multi-stacked device having TSV structure
SAMSUNG ELECTRONICS CO LTD13 citations84
US9824973B2Nov 21, 2017
Integrated circuit devices having through-silicon via structures and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9337125B2May 10, 2016
Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structure
SAMSUNG ELECTRONICS CO LTD10 citations84
US9076849B2Jul 7, 2015
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US9070748B2Jun 30, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US8941216B2Jan 27, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9728490B2Aug 8, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US9530706B2Dec 27, 2016
Semiconductor devices having hybrid stacking structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US8927426B2Jan 6, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US8836142B2Sep 16, 2014
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations83
US6399457B2Jun 4, 2002
Semiconductor device having capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US11710715B2Jul 25, 2023
Semiconductor package
SAMSUNG ELECTRONICS CO LTD2 citations73
US10325897B2Jun 18, 2019
Method for fabricating substrate structure and substrate structure fabricated by using the method
SAMSUNG ELECTRONICS CO LTD4 citations73
US9773660B2Sep 26, 2017
Wafer processing methods
SAMSUNG ELECTRONICS CO LTD3 citations73
US9543250B2Jan 10, 2017
Semiconductor devices including through-silicon via
SAMSUNG ELECTRONICS CO LTD3 citations73
US9252141B2Feb 2, 2016
Semiconductor integrated circuit, method for fabricating the same, and semiconductor package
SAMSUNG ELECTRONICS CO LTD4 citations73
US9236349B2Jan 12, 2016
Semiconductor device including through via structures and redistribution structures
SAMSUNG ELECTRONICS CO LTD6 citations73
LEE HO-JIN
4 patentsUS9859191B2Jan 2, 2018
Semiconductor device including conductive via with buffer layer at tapered portion of conductive via
LEE HO-JIN12 citations84
US8952543B2Feb 10, 2015
Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devices
LEE HO-JIN15 citations84
US9171753B2Oct 27, 2015
Semiconductor devices having conductive via structures and methods for fabricating the same
LEE HO-JIN7 citations83
US9852965B2Dec 26, 2017
Semiconductor devices with through electrodes and methods of fabricating the same
LEE HO-JIN6 citations73
PARK JAE-HWA
3 patentsUS9691684B2Jun 27, 2017
Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same
PARK JAE-HWA21 citations93
US9379042B2Jun 28, 2016
Integrated circuit devices having through silicon via structures and methods of manufacturing the same
PARK JAE-HWA15 citations83
US9142490B2Sep 22, 2015
Integrated circuit device having through-silicon-via structure and method of manufacturing the integrated circuit device
PARK JAE-HWA11 citations83
PARK BYUNG-LYUL
3 patentsUS8076234B1Dec 13, 2011
Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structure
PARK BYUNG-LYUL40 citations92
US9018768B2Apr 28, 2015
Integrated circuit having through silicon via structure with minimized deterioration
PARK BYUNG-LYUL10 citations83
US8592310B2Nov 26, 2013
Methods of manufacturing a semiconductor device
PARK BYUNG-LYUL18 citations83
KANG PIL-KYU
2 patentsJUNG DEOK-YOUNG
2 patentsPARK JIN-HO
2 patentsMOON KWANG-JIN
1 patentKIM SU-KYOUNG
1 patentHAN KYU-HEE
1 patentLEE DOSUN
1 patentKIM TAEYEONG
1 patentShowing the top 50 of 104 patents by PatentIndex Score.