Inventor
MOON KWANG-JIN
KR68 patents
⚠️ This page may combine multiple inventors who share the name “MOON KWANG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
38 patentsUS9941243B2Apr 10, 2018
Wafer-to-wafer bonding structure
SAMSUNG ELECTRONICS CO LTD237 citations99
US7416981B2Aug 26, 2008
Method of forming metal layer used in the fabrication of semiconductor device
SAMSUNG ELECTRONICS CO LTD49 citations96
US6573147B2Jun 3, 2003
Method of forming a semiconductor device having contact using crack-protecting layer
SAMSUNG ELECTRONICS CO LTD19 citations92
US10950578B2Mar 16, 2021
Semiconductor device, semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US10468400B2Nov 5, 2019
Method of manufacturing substrate structure
SAMSUNG ELECTRONICS CO LTD8 citations84
US10325869B2Jun 18, 2019
Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations84
US9337125B2May 10, 2016
Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structure
SAMSUNG ELECTRONICS CO LTD10 citations84
US7615817B2Nov 10, 2009
Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method
SAMSUNG ELECTRONICS CO LTD14 citations84
US7211506B2May 1, 2007
Methods of forming cobalt layers for semiconductor devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7172967B2Feb 6, 2007
Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US9728490B2Aug 8, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations83
US12170259B2Dec 17, 2024
Semiconductor package and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations74
US10325897B2Jun 18, 2019
Method for fabricating substrate structure and substrate structure fabricated by using the method
SAMSUNG ELECTRONICS CO LTD4 citations73
US9252141B2Feb 2, 2016
Semiconductor integrated circuit, method for fabricating the same, and semiconductor package
SAMSUNG ELECTRONICS CO LTD4 citations73
US8860221B2Oct 14, 2014
Electrode connecting structures containing copper
SAMSUNG ELECTRONICS CO LTD5 citations73
US7662716B2Feb 16, 2010
Method for forming silicide contacts
SAMSUNG ELECTRONICS CO LTD6 citations73
US7223689B2May 29, 2007
Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer
SAMSUNG ELECTRONICS CO LTD6 citations73
US7045842B2May 16, 2006
Integrated circuit devices having self-aligned contact structures
SAMSUNG ELECTRONICS CO LTD6 citations73
US6821572B2Nov 23, 2004
Method of cleaning a chemical vapor deposition chamber
SAMSUNG ELECTRONICS CO LTD10 citations73
US10833032B2Nov 10, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10639875B2May 5, 2020
Wafer bonding apparatus and wafer bonding system including the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US10580726B2Mar 3, 2020
Semiconductor devices and semiconductor packages including the same, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10906283B2Feb 2, 2021
Wafer bonding apparatus for directly bonding wafers and a wafer bonding system having the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US12014972B2Jun 18, 2024
Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11728297B2Aug 15, 2023
Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11469202B2Oct 11, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11094612B2Aug 17, 2021
Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11018101B2May 25, 2021
Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US10978655B2Apr 13, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US10446774B2Oct 15, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US7285493B2Oct 23, 2007
Methods of forming a metal layer using transition metal precursors
SAMSUNG ELECTRONICS CO LTD2 citations62
US12249557B2Mar 11, 2025
Semiconductor device including backside wiring structure with super via
SAMSUNG ELECTRONICS CO LTD0 citations61
US11804472B2Oct 31, 2023
Semiconductor device, semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11600552B2Mar 7, 2023
Semiconductor device having a through silicon via and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11488860B2Nov 1, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11069597B2Jul 20, 2021
Semiconductor chips and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11043445B2Jun 22, 2021
Semiconductor device having a through silicon via and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US10763163B2Sep 1, 2020
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
PARK JAE-HWA
4 patentsUS9691684B2Jun 27, 2017
Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same
PARK JAE-HWA21 citations93
US9379042B2Jun 28, 2016
Integrated circuit devices having through silicon via structures and methods of manufacturing the same
PARK JAE-HWA15 citations83
US9214411B2Dec 15, 2015
Integrated circuit devices including a through-silicon via structure and methods of fabricating the same
PARK JAE-HWA12 citations83
US9142490B2Sep 22, 2015
Integrated circuit device having through-silicon-via structure and method of manufacturing the integrated circuit device
PARK JAE-HWA11 citations83
PARK BYUNG-LYUL
4 patentsUS8076234B1Dec 13, 2011
Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structure
PARK BYUNG-LYUL40 citations92
US9018768B2Apr 28, 2015
Integrated circuit having through silicon via structure with minimized deterioration
PARK BYUNG-LYUL10 citations83
US8592310B2Nov 26, 2013
Methods of manufacturing a semiconductor device
PARK BYUNG-LYUL18 citations83
US8847399B2Sep 30, 2014
Semiconductor device and method of fabricating the same
PARK BYUNG-LYUL2 citations62
MOON KWANG-JIN
1 patentJUNG DEOK-YOUNG
1 patentKIM SU-KYOUNG
1 patentJUNG EUN-JI
1 patentShowing the top 50 of 68 patents by PatentIndex Score.