P

Inventor

MOON KWANG-JIN

KR68 patents
⚠️ This page may combine multiple inventors who share the name “MOON KWANG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

38 patents
US9941243B2Apr 10, 2018

Wafer-to-wafer bonding structure

SAMSUNG ELECTRONICS CO LTD237 citations99
US7416981B2Aug 26, 2008

Method of forming metal layer used in the fabrication of semiconductor device

SAMSUNG ELECTRONICS CO LTD49 citations96
US6573147B2Jun 3, 2003

Method of forming a semiconductor device having contact using crack-protecting layer

SAMSUNG ELECTRONICS CO LTD19 citations92
US10950578B2Mar 16, 2021

Semiconductor device, semiconductor package and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US10468400B2Nov 5, 2019

Method of manufacturing substrate structure

SAMSUNG ELECTRONICS CO LTD8 citations84
US10325869B2Jun 18, 2019

Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations84
US9337125B2May 10, 2016

Integrated circuit devices including a via structure and methods of fabricating integrated circuit devices including a via structure

SAMSUNG ELECTRONICS CO LTD10 citations84
US7615817B2Nov 10, 2009

Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method

SAMSUNG ELECTRONICS CO LTD14 citations84
US7211506B2May 1, 2007

Methods of forming cobalt layers for semiconductor devices

SAMSUNG ELECTRONICS CO LTD12 citations84
US7172967B2Feb 6, 2007

Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD19 citations84
US9728490B2Aug 8, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations83
US12170259B2Dec 17, 2024

Semiconductor package and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations74
US10325897B2Jun 18, 2019

Method for fabricating substrate structure and substrate structure fabricated by using the method

SAMSUNG ELECTRONICS CO LTD4 citations73
US9252141B2Feb 2, 2016

Semiconductor integrated circuit, method for fabricating the same, and semiconductor package

SAMSUNG ELECTRONICS CO LTD4 citations73
US8860221B2Oct 14, 2014

Electrode connecting structures containing copper

SAMSUNG ELECTRONICS CO LTD5 citations73
US7662716B2Feb 16, 2010

Method for forming silicide contacts

SAMSUNG ELECTRONICS CO LTD6 citations73
US7223689B2May 29, 2007

Methods for forming a metal contact in a semiconductor device in which an ohmic layer is formed while forming a barrier metal layer

SAMSUNG ELECTRONICS CO LTD6 citations73
US7045842B2May 16, 2006

Integrated circuit devices having self-aligned contact structures

SAMSUNG ELECTRONICS CO LTD6 citations73
US6821572B2Nov 23, 2004

Method of cleaning a chemical vapor deposition chamber

SAMSUNG ELECTRONICS CO LTD10 citations73
US10833032B2Nov 10, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US10639875B2May 5, 2020

Wafer bonding apparatus and wafer bonding system including the same

SAMSUNG ELECTRONICS CO LTD6 citations72
US10580726B2Mar 3, 2020

Semiconductor devices and semiconductor packages including the same, and methods of manufacturing the semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations72
US10906283B2Feb 2, 2021

Wafer bonding apparatus for directly bonding wafers and a wafer bonding system having the same

SAMSUNG ELECTRONICS CO LTD5 citations71
US12014972B2Jun 18, 2024

Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11728297B2Aug 15, 2023

Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11469202B2Oct 11, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11094612B2Aug 17, 2021

Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11018101B2May 25, 2021

Semiconductor devices, semiconductor packages, and methods of manufacturing the semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US10978655B2Apr 13, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US10446774B2Oct 15, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD1 citations62
US7285493B2Oct 23, 2007

Methods of forming a metal layer using transition metal precursors

SAMSUNG ELECTRONICS CO LTD2 citations62
US12249557B2Mar 11, 2025

Semiconductor device including backside wiring structure with super via

SAMSUNG ELECTRONICS CO LTD0 citations61
US11804472B2Oct 31, 2023

Semiconductor device, semiconductor package and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11600552B2Mar 7, 2023

Semiconductor device having a through silicon via and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11488860B2Nov 1, 2022

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11069597B2Jul 20, 2021

Semiconductor chips and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US11043445B2Jun 22, 2021

Semiconductor device having a through silicon via and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US10763163B2Sep 1, 2020

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations61

PARK JAE-HWA

4 patents

PARK BYUNG-LYUL

4 patents

MOON KWANG-JIN

1 patent

JUNG DEOK-YOUNG

1 patent

KIM SU-KYOUNG

1 patent

JUNG EUN-JI

1 patent

Showing the top 50 of 68 patents by PatentIndex Score.