Inventor · disambiguated record
Christiane Poblenz
Also filed as: POBLENZ CHRISTIANE
23 granted patents·1 pending application·1,968 citations·filing 2009–2021
97Inventor score
Top patents by PatentIndex Score
24 records- 0198US9543738B2Low voltage laser diodes on {20-21} gallium and nitrogen containing substratesRARING JAMES W·Filed 2010·Granted Jan 10, 2017·36 cites·55 claims
- 0298US8634442B1Optical device structure using GaN substrates for laser applicationsRARING JAMES W·Filed 2010·Granted Jan 21, 2014·78 cites·58 claims
- 0398US8575728B1Method and surface morphology of non-polar gallium nitride containing substratesRARING JAMES W·Filed 2012·Granted Nov 5, 2013·36 cites·24 claims
- 0498US8524578B1Method and surface morphology of non-polar gallium nitride containing substratesRARING JAMES W·Filed 2012·Granted Sep 3, 2013·41 cites·17 claims
- 0598US8494017B2Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methodsSHARMA RAJAT·Filed 2012·Granted Jul 23, 2013·39 cites·16 claims
- 0698US8355418B2Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substratesSORAA INC·Filed 2010·Granted Jan 15, 2013·241 cites·35 claims
- 0798US8351478B2Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substratesSORAA INC·Filed 2010·Granted Jan 8, 2013·243 cites·33 claims
- 0898US8314429B1Multi color active regions for white light emitting diodeRARING JAMES·Filed 2010·Granted Nov 20, 2012·282 cites·16 claims
- 0998US8284810B1Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methodsSHARMA RAJAT·Filed 2009·Granted Oct 9, 2012·190 cites·22 claims
- 1098US8252662B1Method and structure for manufacture of light emitting diode devices using bulk GaNPOBLENZ CHRISTIANE·Filed 2010·Granted Aug 28, 2012·220 cites·18 claims
- 1198US8247887B1Method and surface morphology of non-polar gallium nitride containing substratesRARING JAMES·Filed 2009·Granted Aug 21, 2012·273 cites·25 claims
- 1298US8048225B2Large-area bulk gallium nitride wafer and method of manufactureSORAA INC·Filed 2009·Granted Nov 1, 2011·63 cites·16 claims
- 1398US7976630B2Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufactureSORAA INC·Filed 2009·Granted Jul 12, 2011·93 cites·20 claims
- 1497US8482104B2Method for growth of indium-containing nitride filmsD EVELYN MARK P·Filed 2012·Granted Jul 9, 2013·33 cites·24 claims
- 1597US8465588B2Ammonothermal method for growth of bulk gallium nitridePOBLENZ CHRISTIANE·Filed 2011·Granted Jun 18, 2013·53 cites·45 claims
- 1696US8816319B1Method of strain engineering and related optical device using a gallium and nitrogen containing active regionRARING JAMES W·Filed 2011·Granted Aug 26, 2014·19 cites·17 claims
- 1795US10090644B2Low voltage laser diodes on {20-21} gallium and nitrogen containing substratesSORAA LASER DIODE INC·Filed 2017·Granted Oct 2, 2018·6 cites·20 claims
- 1892US11070031B2Low voltage laser diodes on {20-21} gallium and nitrogen containing surfacesKYOCERA SLD LASER INC·Filed 2019·Granted Jul 20, 2021·3 cites·19 claims
- 1991US9853420B2Low voltage laser diodes on {20-21} gallium and nitrogen containing substratesSORAA LASER DIODE INC·Filed 2016·Granted Dec 26, 2017·4 cites·20 claims
- 2090US8971368B1Laser devices having a gallium and nitrogen containing semipolar surface orientationSORAA INC·Filed 2013·Granted Mar 3, 2015·9 cites·32 claims
- 2188US10424900B2Low voltage laser diodes on {20-21} gallium and nitrogen containing substratesSORAA LASER DIODE INC·Filed 2018·Granted Sep 24, 2019·2 cites·15 claims
- 2279US12327984B2Low voltage laser diodes on {20-21} gallium and nitrogen containing surfacesKYOCERA SLD LASER INC·Filed 2021·Granted Jun 10, 2025·0 cites·20 claims
- 2379US9093820B1Method and structure for laser devices using optical blocking regionsRARING JAMES W·Filed 2012·Granted Jul 28, 2015·4 cites·24 claims
- 2438US2011056429A1Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for DevicesSORAA INC·Filed 2010·Application pending·0 cites
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