Inventor · disambiguated record
Sik Lui
Also filed as: LUI SIK · LUI SIK K
133 granted patents·14 pending applications·1,893 citations·filing 1992–2023
99Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR77BHALLA ANUP16LUI SIK8ALPHA & OMEGA SEMICONDUCTOR INT LP5INTEGRATED DEVICE TECH5
Top patents by PatentIndex Score
147 records- 0199US8119482B2MOSFET using gate work function engineering for switching applicationsBHALLA ANUP·Filed 2010·Granted Feb 21, 2012·125 cites·12 claims
- 0297US9685435B2Integrated snubber in a single poly MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jun 20, 2017·12 cites·17 claims
- 0397US9190512B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 17, 2015·20 cites·9 claims
- 0497US8809948B1Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·34 cites·18 claims
- 0597US8753935B1High frequency switching MOSFETs with low output capacitance using a depletable P-shieldBOBDE MADHUR·Filed 2012·Granted Jun 17, 2014·33 cites·20 claims
- 0697US8431989B2Shielded gate trench (SGT) MOSFET devices and manufacturing processesBHALLA ANUP·Filed 2011·Granted Apr 30, 2013·23 cites·19 claims
- 0797US7285822B2Power MOS deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2005·Granted Oct 23, 2007·54 cites·8 claims
- 0896US9502554B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Nov 22, 2016·12 cites·12 claims
- 0996US8951867B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Feb 10, 2015·22 cites·26 claims
- 1096US8946816B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 3, 2015·20 cites·14 claims
- 1196US8580667B2Self aligned trench MOSFET with integrated diodeLUI SIK·Filed 2010·Granted Nov 12, 2013·21 cites·14 claims
- 1296US8431470B2Approach to integrate Schottky in MOSFETLUI SIK·Filed 2011·Granted Apr 30, 2013·34 cites·24 claims
- 1396US8394702B2Method for making dual gate oxide trench MOSFET with channel stop using three or four masks processTAI SUNG-SHAN·Filed 2010·Granted Mar 12, 2013·22 cites·15 claims
- 1496US8324683B2Oxide terminated trench MOSFET with three or four masksLUI SIK·Filed 2012·Granted Dec 4, 2012·16 cites·11 claims
- 1596US7605425B2Power MOS deviceALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Oct 20, 2009·26 cites·16 claims
- 1696US6838722B2Structures of and methods of fabricating trench-gated MIS devicesSILICONIX INC·Filed 2002·Granted Jan 4, 2005·98 cites·7 claims
- 1795US9252264B2High frequency switching MOSFETs with low output capacitance using a depletable P-shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 2, 2016·13 cites·12 claims
- 1895US9230957B2Integrated snubber in a single poly MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jan 5, 2016·16 cites·17 claims
- 1995US9214545B2Dual gate oxide trench MOSFET with channel stop trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Dec 15, 2015·15 cites·14 claims
- 2095US9136380B2Device structure and methods of making high density MOSFETs for load switch and DC-DC applicationsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 15, 2015·18 cites·10 claims
- 2195US8980716B2Self aligned trench MOSFET with integrated diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Mar 17, 2015·15 cites·10 claims
- 2295US8907416B2Dual gate oxide trench MOSFET with channel stop trenchTAI SUNG-SHAN·Filed 2013·Granted Dec 9, 2014·17 cites·20 claims
- 2395US8367501B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2010·Granted Feb 5, 2013·14 cites·16 claims
- 2495US7005347B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 28, 2006·74 cites·17 claims
- 2594US9450088B2High density trench-based power MOSFETs with self-aligned active contacts and method for making such devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·8 cites·35 claims
- 2694US9013848B2Active clamp protection circuit for power semiconductor device for high frequency switchingALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Apr 21, 2015·19 cites·22 claims
- 2794US8956940B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Feb 17, 2015·9 cites·22 claims
- 2894US8896131B2Cascode scheme for improved device switching behaviorBHALLA ANUP·Filed 2011·Granted Nov 25, 2014·20 cites·23 claims
- 2994US8828857B2Approach to integrate Schottky in MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Sep 9, 2014·18 cites·20 claims
- 3094US8637926B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Jan 28, 2014·11 cites·24 claims
- 3194US8597998B2Power MOS device fabricationBHALLA ANUP·Filed 2012·Granted Dec 3, 2013·11 cites·17 claims
- 3294US7923774B2Power MOS device with conductive contact layerALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Apr 12, 2011·17 cites·12 claims
- 3394US7745878B2Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contactALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted Jun 29, 2010·28 cites·4 claims
- 3494US7453119B2Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contactALPHS & OMEGA SEMICONDUCTOR LT·Filed 2006·Granted Nov 18, 2008·47 cites·20 claims
- 3593US9269805B2Method to manufacture short channel trench MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Feb 23, 2016·7 cites·20 claims
- 3692US10056461B2Composite masking self-aligned trench MOSFETALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Aug 21, 2018·8 cites·14 claims
- 3792US9484452B2Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETsALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Nov 1, 2016·12 cites·9 claims
- 3892US9219003B2Oxide terminated trench MOSFET with three or four masksALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Dec 22, 2015·5 cites·22 claims
- 3992US8324711B2Precision high-frequency capacitor formed on semiconductor substrateGOLDBERGER HAIM·Filed 2011·Granted Dec 4, 2012·12 cites·18 claims
- 4092US7868381B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2007·Granted Jan 11, 2011·22 cites·9 claims
- 4192US7436022B2Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layoutALPHA & OMEGA SEMICONDUCTORS L·Filed 2006·Granted Oct 14, 2008·35 cites·39 claims
- 4291US8933506B2Diode structures with controlled injection efficiency for fast switchingBOBDE MADHUR·Filed 2011·Granted Jan 13, 2015·15 cites·9 claims
- 4391US7737522B2Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical directionALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Jun 15, 2010·17 cites·21 claims
- 4491US7633119B2Shielded gate trench (SGT) MOSFET devices and manufacturing processesALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Granted Dec 15, 2009·17 cites·3 claims
- 4591US7335946B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 26, 2008·43 cites·4 claims
- 4691US6509233B2Method of making trench-gated MOSFET having cesium gate oxide layerSILICONIX INC·Filed 2002·Granted Jan 21, 2003·57 cites·6 claims
- 4790US9324858B2Trench-gated MIS devicesBHALLA ANUP·Filed 2010·Granted Apr 26, 2016·8 cites·20 claims
- 4890US9171917B2Edge termination configurations for high voltage semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Oct 27, 2015·10 cites·8 claims
- 4990US8445370B2Trench junction barrier controlled SchottkyLUI SIK K·Filed 2010·Granted May 21, 2013·11 cites·9 claims
- 5090US8288229B2Power MOS device fabricationBHALLA ANUP·Filed 2011·Granted Oct 16, 2012·7 cites·20 claims
Showing the top 50 of 147 patent records by PatentIndex Score.
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