Inventor · disambiguated record
Hao Fang
Also filed as: FANG HAO · FANG HAO FANG
83 granted patents·3 pending applications·1,871 citations·filing 1993–2023
99Inventor score
Files withADVANCED MICRO DEVICES INC58MARVELL ASIA PTE LTD7AGERE SYSTEMS INC6SANDISK CORP4CHANG MARK S3
Top patents by PatentIndex Score
86 records- 0198US10984822B2Pulse-based writing for magnetic storage mediaMARVELL ASIA PTE LTD·Filed 2020·Granted Apr 20, 2021·10 cites·20 claims
- 0298US5991202AMethod for reducing program disturb during self-boosting in a NAND flash memoryADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 23, 1999·334 cites·20 claims
- 0397US11270723B2Pulse-based writing for magnetic storage mediaMARVELL ASIA PTE LTD·Filed 2021·Granted Mar 8, 2022·6 cites·20 claims
- 0496US6175522B1Read operation scheme for a high-density, low voltage, and superior reliability nand flash memory deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 16, 2001·195 cites·17 claims
- 0594US10734016B2Pulse-based writing for magnetic storage mediaMARVELL WORLD TRADE LTD·Filed 2019·Granted Aug 4, 2020·11 cites·20 claims
- 0694US5491657AMethod for bulk (or byte) charging and discharging an array of flash EEPROM memory cellsADVANCED MICRO DEVICES INC·Filed 1995·Granted Feb 13, 1996·137 cites·23 claims
- 0793US7362615B2Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devicesSANDISK CORP·Filed 2005·Granted Apr 22, 2008·25 cites·11 claims
- 0893US5617357AFlash EEPROM memory with improved discharge speed using substrate bias and method thereforADVANCED MICRO DEVICES INC·Filed 1995·Granted Apr 1, 1997·107 cites·28 claims
- 0991US7692887B2Method and apparatus for measuring resistance of a resistive sensorAGERE SYSTEMS INC·Filed 2006·Granted Apr 6, 2010·13 cites·40 claims
- 1091US6514830B1Method of manufacturing high voltage transistor with modified field implant maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 4, 2003·43 cites·10 claims
- 1189US7436703B2Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devicesSANDISK CORP·Filed 2005·Granted Oct 14, 2008·21 cites·13 claims
- 1288US6316293B1Method of forming a nand-type flash memory device having a non-stacked gate transistor structureADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 13, 2001·37 cites·7 claims
- 1388US6218689B1Method for providing a dopant level for polysilicon for flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 17, 2001·64 cites·30 claims
- 1488US6023085ACore cell structure and corresponding process for NAND-type high performance flash memory deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 8, 2000·57 cites·7 claims
- 1586US6235586B1Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applicationsADVANCED MICRO DEVICES INC·Filed 1999·Granted May 22, 2001·59 cites·20 claims
- 1685US11894025B1Disk writing mode providing main pole relaxationMARVELL ASIA PTE LTD·Filed 2022·Granted Feb 6, 2024·1 cites·22 claims
- 1785US11557316B2Pulse-based writing for magnetic storage mediaMARVELL ASIA PTE LTD·Filed 2022·Granted Jan 17, 2023·1 cites·20 claims
- 1885US5600578ATest method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test resultsADVANCED MICRO DEVICES INC·Filed 1993·Granted Feb 4, 1997·103 cites·38 claims
- 1984US6667511B1NAND type core cell structure for a high density flash memory device having a unique select gate transistor configurationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 23, 2003·45 cites·10 claims
- 2084US5606518ATest method for predicting hot-carrier induced leakage over time in short-channel IGFETS and products designed in accordance with test resultsADVANCED MICRO DEVICES INC·Filed 1995·Granted Feb 25, 1997·56 cites·19 claims
- 2183US6417990B1Composite core structure for high efficiency writerSEAGATE TECHNOLOGY LLC·Filed 2000·Granted Jul 9, 2002·19 cites·14 claims
- 2282US7167330B2Over-writing data in a recording systemAGERE SYSTEMS INC·Filed 2005·Granted Jan 23, 2007·5 cites·20 claims
- 2381US7106536B2Write head demagnetizerAGERE SYSTEMS INC·Filed 2004·Granted Sep 12, 2006·16 cites·20 claims
- 2481US5457336ANon-volatile memory structure including protection and structure for maintaining threshold stabilityADVANCED MICRO DEVICES INC·Filed 1994·Granted Oct 10, 1995·47 cites·23 claims
- 2580US6057193AElimination of poly cap for easy poly1 contact for NAND productADVANCED MICRO DEVICES INC·Filed 1998·Granted May 2, 2000·36 cites·9 claims
- 2677US6143608ABarrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridationADVANCED MICRO DEVICES INC·Filed 1999·Granted Nov 7, 2000·39 cites·24 claims
- 2773US12249353B1Disk writing mode providing main pole relaxationMARVELL ASIA PTE LTD·Filed 2023·Granted Mar 11, 2025·0 cites·24 claims
- 2869US6815292B1Flash memory having improved core field isolation in select gate regionsADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 9, 2004·11 cites·4 claims
- 2969US6362049B1High yield performance semiconductor process flow for NAND flash memory productsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 26, 2002·27 cites·62 claims
- 3068US7221008B2Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memorySANDISK CORP·Filed 2003·Granted May 22, 2007·11 cites·32 claims
- 3168US6159795ALow voltage junction and high voltage junction optimization for flash memoryADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·36 cites·11 claims
- 3267US10896694B2Thermal compensation for laser in heat assisted magnetic recordingMARVELL WORLD TRADE LTD·Filed 2019·Granted Jan 19, 2021·1 cites·20 claims
- 3366US6638358B1Method and system for processing a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 28, 2003·10 cites·3 claims
- 3465US6436778B1Re-oxidation approach to improve peripheral gate oxide integrity in a tunnel nitride oxidation processADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 20, 2002·12 cites·17 claims
- 3563US11257519B2Thermal compensation for heat assisted magnetic recordingMARVELL ASIA PTE LTD·Filed 2021·Granted Feb 22, 2022·0 cites·20 claims
- 3663US6429479B1Nand flash memory with specified gate oxide thicknessADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·9 cites·19 claims
- 3763US5708588AFlash EEPROM memory with improved discharged speed using substrate bias and method thereforADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 13, 1998·21 cites·2 claims
- 3862US7466508B2Impedance-matched write circuit with shunted matching resistorAGERE SYSTEMS INC·Filed 2004·Granted Dec 16, 2008·4 cites·21 claims
- 3960US7672165B2Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devicesSANDISK CORP·Filed 2008·Granted Mar 2, 2010·1 cites·9 claims
- 4060US6610580B1Flash memory array and a method and system of fabrication thereofADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 26, 2003·11 cites·6 claims
- 4156US6376309B2Method for reduced gate aspect ratio to improve gap-fill after spacer etchADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 23, 2002·6 cites·11 claims
- 4255US6133746AMethod for determining a reliable oxide thicknessADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 17, 2000·20 cites·10 claims
- 4355US5978272ANonvolatile memory structure for programmable logic devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·15 cites·6 claims
- 4454US6495435B2Method for improved control of lines adjacent to a select gate using a mask assist featureADVANCE MICRO DEVICES INC·Filed 2001·Granted Dec 17, 2002·6 cites·7 claims
- 4553US6472327B2Method and system for etching tunnel oxide to reduce undercutting during memory array fabricationADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 29, 2002·6 cites·1 claims
- 4652US7116174B2Base current compensation circuit for a bipolar junction transistorAGERE SYSTEMS INC·Filed 2004·Granted Oct 3, 2006·7 cites·36 claims
- 4752US6372577B1Core cell structure and corresponding process for NAND type performance flash memory deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 16, 2002·10 cites·9 claims
- 4852US6312991B1Elimination of poly cap easy poly 1 contact for NAND productADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 6, 2001·4 cites·13 claims
- 4952US6166951AMulti state sensing of NAND memory cells by applying reverse-bias voltageADVANCED MICRO DEVICES INC·Filed 1999·Granted Dec 26, 2000·14 cites·7 claims
- 5052US6072191AInterlevel dielectric thickness monitor for complex semiconductor chipsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 6, 2000·15 cites·7 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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