Inventor · disambiguated record
Hung-An Teng
Also filed as: TENG HUNG-AN
8 granted patents·35 citations·filing 2011–2017
85Inventor score
Top patents by PatentIndex Score
8 records- 0191US10056347B2Bump structure for yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·3 cites·21 claims
- 0288US9640490B2Through silicon via keep out zone formation method and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 2, 2017·5 cites·20 claims
- 0386US10290604B2Substrateless integrated circuit packages and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·4 cites·20 claims
- 0485US8604619B2Through silicon via keep out zone formation along different crystal orientationsHSIEH CHENG-CHIEH·Filed 2011·Granted Dec 10, 2013·6 cites·19 claims
- 0584US8836094B1Package device including an opening in a flexible substrate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 16, 2014·7 cites·19 claims
- 0682US9842825B2Substrateless integrated circuit packages and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 12, 2017·5 cites·20 claims
- 0781US9054166B2Through silicon via keep out zone formation method and systemTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 9, 2015·4 cites·20 claims
- 0861US9553053B2Bump structure for yield improvementCHIU TZU-WEI·Filed 2012·Granted Jan 24, 2017·1 cites·21 claims
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